- Photonic and Optical Devices
- Silicon Nanostructures and Photoluminescence
- Semiconductor Quantum Structures and Devices
- Photonic Crystals and Applications
- Climate change and permafrost
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and interfaces
- Inorganic Fluorides and Related Compounds
- Advanced Semiconductor Detectors and Materials
- Nanowire Synthesis and Applications
- Ga2O3 and related materials
- ZnO doping and properties
- Advanced Photocatalysis Techniques
University of Arkansas at Fayetteville
2022-2024
The band offsets for the β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality β-(Al0.21Ga0.79)2O3 films were grown metal-organic chemical vapor deposition characterization. indirect gap of was determined optical transmission to be 4.69 ± 0.03 eV with a direct transition 5.37 eV, while β-Ga2O3 confirmed an 4.52 4.94 eV. resulting alignment at type II valence and conduction edges being -0.26 0.08 0.43 respectively,...
We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers transport from the GeSn absorber Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before breakdown in GeSn/Si APDs first time. The spectral response covers 1500 1700 nm. measured voltages are 15 17...
GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better high-quality interfaces, promising electrically pumped GeSn laser devices. Therefore, understanding...