Justin Rudie

ORCID: 0000-0003-1669-8223
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About
Contact & Profiles
Research Areas
  • Photonic and Optical Devices
  • Silicon Nanostructures and Photoluminescence
  • Semiconductor Quantum Structures and Devices
  • Photonic Crystals and Applications
  • Climate change and permafrost
  • Gas Sensing Nanomaterials and Sensors
  • Semiconductor materials and interfaces
  • Inorganic Fluorides and Related Compounds
  • Advanced Semiconductor Detectors and Materials
  • Nanowire Synthesis and Applications
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Advanced Photocatalysis Techniques

University of Arkansas at Fayetteville
2022-2024

The band offsets for the β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality β-(Al0.21Ga0.79)2O3 films were grown metal-organic chemical vapor deposition characterization. indirect gap of was determined optical transmission to be 4.69 ± 0.03 eV with a direct transition 5.37 eV, while β-Ga2O3 confirmed an 4.52 4.94 eV. resulting alignment at type II valence and conduction edges being -0.26 0.08 0.43 respectively,...

10.1021/acsami.2c04177 article EN ACS Applied Materials & Interfaces 2022-07-18

We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers transport from the GeSn absorber Si multiplication layer such that clear punch-through behavior and a saturated primary responsivity of 0.3 A/W at 1550 nm were observed before breakdown in GeSn/Si APDs first time. The spectral response covers 1500 1700 nm. measured voltages are 15 17...

10.48550/arxiv.2405.13761 preprint EN arXiv (Cornell University) 2024-05-22

GeSn-based SWIR lasers featuring imaging, sensing, and communications has gained dynamic development recently. However, the existing SiGeSn/GeSn double heterostructure lacks adequate electron confinement is insufficient for room temperature lasing. The recently demonstrated semiconductor grafting technique provides a viable approach towards AlGaAs/GeSn p-i-n heterojunctions with better high-quality interfaces, promising electrically pumped GeSn laser devices. Therefore, understanding...

10.48550/arxiv.2408.16884 preprint EN arXiv (Cornell University) 2024-08-29
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