A5076830412- Semiconductor Quantum Structures and Devices
- Nanowire Synthesis and Applications
- Electronic and Structural Properties of Oxides
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Plasmonic and Surface Plasmon Research
- Advanced Fiber Optic Sensors
- GaN-based semiconductor devices and materials
- Optical Coatings and Gratings
- Advanced Photonic Communication Systems
- Semiconductor materials and devices
- Gold and Silver Nanoparticles Synthesis and Applications
- ZnO doping and properties
- Ferroelectric and Piezoelectric Materials
- Graphene research and applications
- Multiferroics and related materials
- Force Microscopy Techniques and Applications
- Optical Wireless Communication Technologies
- Ga2O3 and related materials
- Topological Materials and Phenomena
- Nanopore and Nanochannel Transport Studies
- Advanced Semiconductor Detectors and Materials
- Quantum and electron transport phenomena
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
Naval Surface Warfare Center
2020-2023
University of Arkansas at Fayetteville
2007-2022
Material Sciences (United States)
2013
Western Kentucky University
2005
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth behavior both vicinal non-vicinal substrates investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray high resolution transmission microscopy. It is found that better than a to provide films. Hall magnetoresistance measurements indicate p type n insulator can be directly substrate, which may pave...
Chitosan (CS)-graphene oxide (GO) composite films were fabricated, characterized, and evaluated as pressure-driven water filtration membranes. GO particles incorporated into a chitosan polymer solution to form suspension that was cast membrane via evaporative phase inversion allowing for scale-up cross-flow testing conditions. Morphology composition results nano granular in the CS matrix indicate particle size of impacts internal morphology well structural order chemical composition....
Group IV alloys of GeSn have been extensively investigated as a competing material alternative in shortwave-to-mid-infrared photodetectors (PDs). The relatively large defect densities present are the major challenge developing practical devices, owing to low-temperature growth and lattice mismatch with Si or Ge substrates. In this paper, we comprehensively analyze impact defects on performance p-i-n homojunction PDs. We first our theoretical models calculate various contributing components...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Vas. P. Kunets, C. S. Furrow, T. Al. Morgan, Y. Hirono, M. E. Ware, V. G. Dorogan, Yu. I. Mazur, J. Salamo; InGaAs quantum wire intermediate band solar cell. Appl. Phys. Lett. 23 July 2012; 101 (4): 041106. https://doi.org/10.1063/1.4737944 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends...
Self-assembly of bismuth droplets at nanoscale on GaAs(100) surface using molecular beam epitaxy was demonstrated. Fine control density and size achieved by varying growth temperature total deposition. Droplet tuned roughly 3 orders magnitude, the density-temperature dependence found to be consistent with classical nucleation theory. These results may extend flexibility droplet serving as templates for group V based epitaxy, which is in contrast conventional III encourage nanostructure...
Remotely doped In0.35Ga0.65As layers of different coverages 6, 9, 11, and 13 ML were grown by molecular beam epitaxy on (100) GaAs. Quantum dot (QD) nucleation was observed in situ reflection high-energy electron diffraction at 8 growth In0.35Ga0.65As, while for 6 ML, only two-dimensional (2D) observed. Atomic force microscopy, low temperature photoluminescence, Hall effect measurements confirmed this transition from 2D to three-dimensional growth. Low-frequency noise studies have been...
The band offsets for the β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality β-(Al0.21Ga0.79)2O3 films were grown metal-organic chemical vapor deposition characterization. indirect gap of was determined optical transmission to be 4.69 ± 0.03 eV with a direct transition 5.37 eV, while β-Ga2O3 confirmed an 4.52 4.94 eV. resulting alignment at type II valence and conduction edges being -0.26 0.08 0.43 respectively,...
Magnetic sensitivity and low-frequency noise in micro-Hall sensors based on pseudomorphic InAs quantum well channels are investigated as functions of thickness. The strained wells with thickness between 0 20 Aring added into lattice-matched doped channel In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As/In Al xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As/InP...
We report the effects of nitrogen (N) plasma and indium (In) flux on In adatom adsorption/desorption kinetics a GaN(0001) surface at relatively high plasma-assisted molecular beam epitaxy-growth temperature 680 °C. experimentally demonstrate that under an active N flux, (3×3)R30° reconstruction containing quickly appears dynamically stable adlayers sitting this exhibit continuous change from 0 to 2 MLs as function flux. Compared bare GaN 1×1 which is during exposure without we observed much...
Aluminum-nickel nano-alloys were prepared by successive evaporation of nickel and aluminum ultra-thin films on silicon glass substrates at room temperature. Alloying was obtained through the spontaneous intermixing layers The shift in X-ray photoelectron spectroscopy (XPS) peaks pure metals indicated alloying process films. Using spectroscopic ellipsometry from UV to near infrared spectral range, optical properties these investigated. effective pseudo-dielectric functions direct inversion...
Group IV alloys of GeSn have been extensively investigated as a competing material alternative in short-wave to mid-infrared photodetectors (PDs). The relatively large defect densities present are the major challenge developing practical devices, owing low-temperature growth and lattice mismatch with Si or Ge substrates. In this paper, we comprehensively analyze impact defects on performance p-i-n homojunction PDs. We first our theoretical models calculate various contributing components...
Piezoresponse force microscopy is used to study the velocity of polarization domain wall in ultrathin ferroelectric barium titanate (BTO) films grown on strontium (STO) substrates by molecular beam epitaxy. The electric field due cone atomic microscope tip demonstrated as dominant for expansion thin at lateral distances greater than about one diameter away from tip. under applied BTO (less 40 nm) followed an expanding process given Merz's law. material constants a fit data law very are...
Northwest Nuclear, LLC (NWN), the Applied Physics Institute (API) at Western Kentucky University, and Crisis Prep Services, (CPS) have developed a tracking technology for first responders security personnel based upon AeroScout system (a product of AeroScout, Inc.) technologies independently by NWN, API, CPS. These systems provide location information using 802.11XXX architecture measuring time arrival packets from set active radio frequency (RF) tags to receivers. The can track graphically...
Ionizing radiation has the potential to cause operational disruptions and destroy microelectronic devices. This paper introduces demonstrates a method of hardening devices for sustained use in applications where exposure ionizing exists. By incorporating quantum structures below active regions devices, gettering charges created by becomes possible. The electrons holes forces recombination carriers, thus eliminating photocurrent surges trap filling which would otherwise disrupt device...
Surface plasmon resonance transduces photons into energetically "hot" electrons, which provides new Schottky-based platforms for infrared photodetectors without need cooling infrastructure. Material design principles towards a multiphysics computation tool are presented where performance is governed by plasmonic activity, density-of-states, and the Schottky barrier.
Photodetectors harnessing hot carrier generation on surface plasmon resonant nanoantennas are a promising avenue to achieving sub-bandgap imaging at room temperature. However, efficient extraction of plasmonic carriers under low-energy infrared (IR) excitation predicates careful design Schottky interfaces. This work reports the simulation-guided fabrication Au (i) planar diodes and (ii) embedded IR interfaced with both n-/p-type Si GaAs semiconductors in order elucidate impact their...