A5116112334- Silicon Carbide Semiconductor Technologies
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Solid State Laser Technologies
- Perovskite Materials and Applications
- Semiconductor materials and interfaces
- Luminescence Properties of Advanced Materials
- Silicon and Solar Cell Technologies
- Photorefractive and Nonlinear Optics
- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Electromagnetic Compatibility and Noise Suppression
- Advanced Fiber Laser Technologies
- Crystal Structures and Properties
- Advanced ceramic materials synthesis
- Glass properties and applications
- Aluminum Alloys Composites Properties
- Copper Interconnects and Reliability
- Laser Design and Applications
- Optical properties and cooling technologies in crystalline materials
- Copper-based nanomaterials and applications
- Phase-change materials and chalcogenides
- Organic Light-Emitting Diodes Research
- Solid-state spectroscopy and crystallography
- Advanced Semiconductor Detectors and Materials
East China Normal University
2017-2025
Shandong University
2015-2024
State Key Laboratory of Crystal Materials
2015-2024
Novel (United States)
2024
Southeast University
2023
Donghua University
2021-2022
Institute of Semiconductors
2020
Global Energy Interconnection Research Institute North America
2017-2018
Chinese Academy of Sciences
2018
Hefei Institutes of Physical Science
2018
Thermal diffusivity and specific heat of 4H-SiC crystals as a function temperature are measured, respectively, from room to 600 °C. The thermal conductivity normal c-axis was calculated the measured data for both N-type V-doped semi-insulating (SI) single crystals. sample c axis is proportional T−1.26. It approximately 280 W/mK at temperature. For SI sample, T−1.256 it about 347 temperature, bigger than that sample. semiconductor materials, total sum contributions lattice carrier...
The mixed metal Pb/Sn halide perovskites have drawn significant attentions in perovskite photovoltaics due to their broad absorption spectra and tunable band gaps. To obtain a deeper understanding of these materials properties, single crystals are regarded as the best platform among various building blocks for fundamental study. Here, we report mixed-metal MAPbxSn1–xBr3 (MA = CH3NH3) grown by top seeded solution growth (TSSG) method. Systematical characterizations were applied investigating...
Nd:GdVO4 crystal was grown by the Czochralski method. The absorption and fluorescence spectra of were measured at room temperature. thermal expansion specific heat also measured. Laser outputs 1.06 1.34 µm achieved when a sample with high Nd doping concentration pumped low-power laser diode (LD) 808.5 nm, visible green red intracavity frequency doubling 0.53 0.67 nonlinear KTiOPO4 LiB3O5 crystal, respectively, used. highly Nd-doped high-power LD, greater than 5-W output power obtained. A...
Lead free Sn-doped MA<sub>3</sub>Sb<sub>2</sub>I<sub>9</sub> single crystals have been obtained with a significant red-shifted light absorption peak and two-fold enhancement of the carrier mobility than that MA<sub>3</sub>Sb<sub>2</sub>I<sub>9</sub>.
Abstract The vapor transport deposition of quasi‐one‐dimensional antimony selenosulfide (Sb 2 (S,Se) 3 ) has recently attracted increasing research interest for the inexpensive, high‐throughput production thin film photovoltaic devices. Further improvements in Sb solar cell performance urgently require identification processing strategies to control orientation, however growth mechanism high quality absorbers is still not completely clear. Herein, a facile and general approach precisely...
Abstract Quasi‐one‐dimensional antimony sulfoselenide (Sb 2 (S,Se) 3 ) semiconductor is one of the most promising light‐harvesting materials owing to its simple phase and tunable absorption spectra. However, oriented [Sb 4 6 ] n ribbons Sb thin films nearly horizontally stacked in parallel substrate severely hinders transport carriers, yet critical control absorber orientation growth for high‐performance solar cells. Herein, a new close spaced sublimated (CSS) CdS buffer layer with high...
The exceptional structural tunability of organic metal halides endows them with fascinating electronic and photophysical properties, providing much scope for applications. In this work, single crystals the halide (C4 H9 NH3 )2 MnI4 are found to show reversible thermo-induced luminescent chromism within a wide temperature range. crystal exhibits two emission peaks at 550 672 nm, which assigned d-d transition Mn2+ -centered tetrahedra self-trapped excitons, respectively. temperature-dependent...
Cadmium sulfide (CdS) is widely employed as the electron transport layer due to its ability form dense films in fabrication of antimony selenosulfide (Sb2(S, Se)3) solar cells. However, it presents significant drawbacks: toxicity poses environmental risks, and narrow bandgap restricts collection higher-energy carriers. Titanium dioxide (TiO2) stands out a viable environmentally friendly alternative, offering features, such high optical transparency, excellent stability, nontoxic...
Compared with crystallized TiO2, amorphous Nb2O5 has been applied in planar perovskite solar cell as electron transportation layer because of its excellent optical transmittance, low temperature preparation process, and similar Femi level TiO2. However, the transfer rate is still limited by mobility surface defect via room-temperature deposition process. Herein, a novel double buffer [6,6]-phenyl-C61- butyric acid methyl ester(PCBM)/ionic liquid([EMIM]PF6) inserted between film. The PCBM...
Gas induced conversion of hybrid perovskite single crystal to for great enhancement photoelectric properties with their morphology retained.
Antimony chalcogenide (Sb2(S,Se)3) semiconductors have been demonstrated as a promising absorber material for highly efficient inorganic solar cells. Especially, tunable band gaps make them fascinating in the photovoltaic field, thanks to reciprocal replacement of Se and S atoms. Herein, series Sb2(S,Se)3 films with continuously were reported through typical vapor transport deposition process. We concluded relationship Se/S ratio between evaporation source deposited film successfully...