A5086160096- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Multiferroics and related materials
- Magnetic properties of thin films
- Electrostatic Discharge in Electronics
- Magnetic Field Sensors Techniques
- Aluminum Alloys Composites Properties
- Quantum Dots Synthesis And Properties
- ZnO doping and properties
- Advanced DC-DC Converters
- Magnetic and transport properties of perovskites and related materials
- Advanced Welding Techniques Analysis
- Analog and Mixed-Signal Circuit Design
- Electromagnetic Compatibility and Noise Suppression
- Gene Regulatory Network Analysis
- Advanced Sensor and Energy Harvesting Materials
- Acoustic Wave Resonator Technologies
- Aluminum Alloy Microstructure Properties
- Ferroelectric and Piezoelectric Materials
- Chalcogenide Semiconductor Thin Films
- Multilevel Inverters and Converters
- Advanced ceramic materials synthesis
- Perovskite Materials and Applications
- Magneto-Optical Properties and Applications
Xi'an Jiaotong University
2012-2024
Chinese Academy of Sciences
2000-2022
Institute of Modern Physics
2022
Northeast Normal University
2016-2018
Institute of Electrical Engineering
2014-2018
Southeast University
2018
Academy of Mathematics and Systems Science
2011-2015
Peking University
2009-2015
Hubei University of Technology
2015
Changchun Institute of Optics, Fine Mechanics and Physics
2004-2007
Implantable flexible mechanical sensors have exhibited great potential in health monitoring and disease diagnosis due to continuous real-time capability. However, the wires power supply required current devices cause inconvenience risks. Magnetic-based demonstrated advantages wireless passive sensing, but mismatched properties, poor biocompatibility, insufficient sensitivity limited their applications biomechanical monitoring. Here, a magnetic-based strain sensor based on gelatin...
The magnetic field sensors based on anisotropic magnetoresistance (AMR) effect have been widely used in data storage, navigation, and medical diagnosis. However, the AMR of metal materials is relatively weak with an ratio below 2%, which results low voltage output. In order to improve sensitivity fields, we optimize structure sensor a specific photolithographic process. We use two different designs Hall bar Wheatstone bridge similar barber pole structures, investigate angular dependence as...
Heat-assisted magnetic anisotropy engineering has been successfully used in selective writing and microwave amplification due to a large interfacial thermal resistance between the MgO barrier adjacent ferromagnetic layers. However, spin–orbit torque devices, current does not flow through tunnel barrier, resulting negligible heating effect efficient heat dissipation. Here, we report dramatically reduced switching density of ∼2.59 MA/cm2 flexible heterostructures, indicating 98% decrease...
In this work, a useful interfacial damage extraction method for SiC power MOSFETs based on the C-V characteristics is proposed. According to five different interface situations of channel region and JFET region, Cg-Vg curve can be divided into relatively independent parts. It demonstrates that charges injected oxide will lead an opposite shift in part 11 while result shifts 111 IV. Through way, location SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML"...
A high voltage SOI-LIGBT with current capability and latch-up immunity is proposed in this paper. The features the segmented U-shaped N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> emitter `JFET'-region surrounded by channel. channel significantly enhances electron injection from to N-drift region, which leads an improvement on density. Meanwhile, P between adjacent emitters forms additional hole path, beneficial immunity. experiments...
Abstract The voltage modulation of yttrium iron garnet (YIG) is practical and theoretical significance; due to its advantages compactness, high‐speed response, energy efficiency, it can be used for various spintronic applications, including spin‐Hall, spin‐pumping, spin‐Seebeck effects. In this study, a significant ferromagnetic resonance change achieved within the YIG/Pt bilayer heterostructures uisng ionic modulation, which accomplished by modifying interfacial magnetism in deposited...
The emission mechanism in organic light-emitting devices, where the layer is composed of Eu(DBM)3pyzphen (DBM=Dibenzoylmethane, pyzphen=pyrazino-[2,3-f][1,10]-phenanthroline) doped into electron transporting/hole blocking material BPhen (4,7-diphenyl-1, 10-phenanthroline), investigated. Energy transfer and carrier trapping simultaneously exist luminescence process, a main process. Direct by molecules confirmed difference electroluminescence photoluminescence spectra as well J-V...
Flexible strain sensors have attracted extensive research interest in health monitoring and early diagnosis owing to their superiority continuous measurement of physiological signals. However, the design flexible with high sensitivity for subtle coupled biocompatibility, breathability, eco-friendly properties is still challenging. In this study, a facile universal approach was developed preparation highly sensitive, biocompatible, reduced graphene oxide (rGO)/silk composites. The microcrack...
An ultrathin Mg(OH) 2 layer was solution‐deposited onto the ZnO nanowires to solve problem of interfacial charge recombination, caused by increase area in bulk heterojunction (BHJ) PbS colloidal quantum dot solar cells (CQDSCs). This interlayer efficiently passivated surface defects and provided tunnel barrier at ZnO/PbS interface. As a result, recombination interface largely suppressed, proved significantly elongated electron lifetime increased open‐circuit voltage ‐involved BHJ CQDSCs....
Efficient generation of spin current in ferromagnet/heavy-metal systems is critical to orbitronics, but the interface limits efficiency transmitting current, and weakens effective Hall angle heavy-metal layer. In this study authors enhance spin-mixing conductance such a multilayer by inserting an atomically thin layer $\ensuremath{\alpha}$-W at interface, propose corresponding model that considers spin-backflow current. This approach expected further reduce charge-current density realize...
Traditional anisotropic magnetoresistive (AMR) sensors used barber-pole electrodes to rotate the current direction by 45° in order obtain a linear electrical response. However, adoption of reduced working area sensor. Moreover, traditional AMR need large-flipping stripes or permanent magnets for stabilization magnetization. Here, we report sensor using an antiferromagnetic layer regulate magnetization-current angle. The proposed sensor, without consuming extra and power, could fully use...
Abstract Measurement of 3D vector magnetic field is vital importance for the development navigation, biomedical diagnosis, and microimaging. Traditional sensors require cooperation multiple on three orthogonal planes, resulting in disadvantages bulky size low spatial resolution. Recently proposed spin orbit torque sensor based ferromagnetic/heavy‐metal heterostructures can detect components individually due to different symmetries current‐polarity‐dependent magnetization dynamic. However,...
A novel high-voltage interconnection (HVI) structure with dual trenches for 500V SOI-LIGBT is proposed in this paper. Compared the conventional structure, features a shallow trench (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> ) and deep xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> beneath HVI. By employing ), potential can easily penetrate into total sustained by T increased. The experimental results demonstrate that fully...
A high voltage gate drive IC achieving the dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> /dt noise immunity up to 85V/ns and allowable negative V swing -12V at 15V supply is proposed for first time. The robust features are due presented capacitive loaded level shift circuit used in driver. Measured simulated results performed verify electrical characteristics of designed driver which implemented a 0.5um 600V Bipolar-CMOS-DMOS (BCD)...
Magnetoelectric (ME) composites exhibit high sensitivity for detecting the strength of weak magnetic field. Yet, they are not sensitive to angle a randomly orientated in-plane ac field, since strain-mediated ME structures merely response field along certain direction. In this article, an compass intensity as well orientation is proposed. The designed with barbell-shaped structure, where NdFeB permanent magnets induce compressive stress on piezoelectric components via torque effect, so that...
Using a backing plate with prepared grooves of various lengths, the distribution features forging result and effect tool tilt angle on action were investigated by visualisation. The height profile Al extruded into increased increasing angle, showing that can be enhanced tilting tool. It was primarily attributed to increase in actual force, because measured downward forces at 0 3° angles 500 1500 N respectively. Moreover, force found composed static component dynamic component, latter...
The electrical parameters degradations of lateral double-diffused MOS with multiple floating poly-gate field plates under different stress conditions have been investigated experimentally. For the maximum substrate current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">submax</sub> ) stress, increased interface states at bird's beak mainly result in an on-resistance (RON) increase beginning while hot holes injection and trapping into oxide...