A recently synchronized Janus TMD material with broken out-of-plane symmetry offers a vertical dipole to enhance nonlinear optical behavior. Here, by comparing the second harmonic generation properties of MoS2 and MoSSe monolayers, we investigated nonzero SHG susceptibilities 2D material. three-fold enhancement exists in three stacked bulks compared that monolayer. sensitivity their stack pattern is also found. The symmetry, dipole, intrinsic tunable electronic two-dimensional materials make...

Janus structures with the breaking of out-of-plane mirror symmetry have gained intensive attention. Here, on basis first principles, we not only investigate recently discovered 2H-MoSH monolayer [ACS Nano 15, 20319 (2021)], but also report global minimum structure a 1T-MoSH monolayer. Meanwhile, can easily transform into 1T phase, overcoming relatively small barrier 0.13 eV. Intriguingly, is charge-density wave (CDW) material and its CDW order be regulated via external strains. When...

Group IV monochalcogenides exhibit spontaneous polarization and ferroelectricity, which are important in photovoltaic materials. Since strain engineering plays an role the present work, effect of equibiaxial on band structure shift currents monolayer two-dimensional (2D) GeS SnS has systematically been investigated using first-principles calculations. The conduction bands those materials more responsive to than valence bands. Increased compressive leads a drastic reduction gap finally...

We directly reveal that the external interference effect is dominant physical mechanism for intricate polarized Raman response of BP experimentally. Also, we show AC and ZZ directions can be unambiguously determined by a concise inequality .

The breaking of the out-of-plane symmetry makes a two-dimensional (2D) Janus monolayer new platform to explore coupling between ferroelectricity and ferromagnetism. Using density functional theory in combination with Monte Carlo simulations, we report novel phase-switchable 2D multiferroic material VInSe3 large intrinsic spontaneous electric polarization high Curie temperature (Tc). structural transition energy barrier two phases is determined be 0.4 eV, indicating switchability...

Hydrogen molecules in the SiO2 layer and Si-SiO2 interface play a key role reliability of Si-based devices by affecting formation defects. This paper focuses on effect hydrogen molecule release negative bias temperature instability (NBTI) low-temperature pre-treatment (LTPT) p-channel power vertical-double-diffused metal-oxide-semiconductor field-effect transistor (VDMOSFET). The stress (NBTS) LTPT are observed to be able shift threshold voltage. number defects is separated subthreshold...

The impact of bias voltage on the radiation effect silicon carbide metal-oxide semiconductor field-effect transistors (SiC MOSFETs) was studied using 1 MeV high-energy electrons. results indicate that device undergoes ionization effects during irradiation, resulting in a shift threshold voltage. At high fluence, also experiences displacement damage (DD) effects, leading to decrease saturation region current, linear and slope. Defects were characterized deep level transient spectroscopy...

We report a theoretical analysis of parametric quantum pumping electric current which is aided by resonance. The electron pump realized cyclic deformations the barrier heights double-barrier well. pumped found to have large values near resonant level, it has rather sensitive dependence on such control parameters as deformation strength, phase difference, and well width, power-law temperature dependence.

We propose and theoretically investigate a class of stable zigzag graphene nanoribbon (ZGNR) based molecular magnetic tunneling junctions (MTJs).

ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to "Electronic and Magnetic Diversity of Graphone/Graphene Superlattices"Xiao-Qing TianXiao-Qing TianMore by Xiao-Qing Tianhttps://orcid.org/0000-0002-4482-0268, Maryam KianiMaryam KianiMore Kiani, Ya-Dong WeiYa-Dong WeiMore Wei, Naixing FengNaixing FengMore Feng, Zhi-Rui GongZhi-Rui GongMore Gong, Xiang-Rong Wang*Xiang-Rong WangMore Wang, Yu Du*Yu DuMore...

We develop a microscopic theory for ac transport using nonequilibrium Green's-function theory. By including the self-consistent Coulomb interaction, current conserving and gauge-invariant conditions are satisfied. On theoretical side, our can be used to calculate nonlinear properties order by at finite frequency when system is driven far from equilibrium. In addition, charge response such as electrochemical capacitance also calculated. application coupled density-functional numerically...

The Ethylene-Response Factor (ERF) subfamily transcription factors (TFs) belong to the APETALA2/Ethylene-Responsive (AP2/ERF) superfamily and play a vital role in plant growth development. However, identification analysis of ERF genes maize have not yet been performed at genome-wide level. In this study, total 76 TFs were identified found be unevenly distributed on chromosomes. These (ZmERF) classified into six groups, namely groups B1 B6, based phylogenetic analysis. Synteny showed that 50,...

Identifying the impact of native/irradiated traps on electrical properties is vital for implementation high-performance gallium oxide (Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ) power devices. In this work, effect electron irradiation and isochronal thermal annealing vertical Ni/Au β-Ga Schottky barrier diode are explored. Majority minority carrier in after characterized...

Silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) are irradiated by Si ions with different energies. The drain current, current slope, and gate-drain capacitance ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> ) decrease significantly. Also, the threshold voltage shifts. Gamma-ray experiments confirm that shift in (ΔV...

We investigate the thermoelectric transport through carbon chains connected by two Al leads. Using a Landauer-Buttiker-like formula, we calculate thermopower and thermoconductance of $\mathrm{Al}\text{\penalty1000-\hskip0pt}{\mathrm{C}}_{n}\text{\penalty1000-\hskip0pt}\mathrm{Al}$ from first principles. find that charge transfer plays an important role in transport. Because transfer, changes sign for even-odd number atoms. The electric conductance as function gate voltage also exhibit...

The thermoelectric transport properties in atomic scale conductors consisting of a Si atom connected by two electrodes are investigated. It is found that both the electrical current and heat have contributions, one from voltage other temperature gradient. quantities such as Seebeck thermopower thermal conductance characterize tunnel junction studied quantitatively with first-principles technique within framework Landauer-Buttiker formalism linear response regime. A finite only exists very...

We report theoretical investigations of the quantized spin-Hall conductance fluctuation graphene in presence disorder. Two models that exhibit effect (QSHE) are analyzed. Model I is with unitary symmetry under an external magnetic field B not = 0 but a zero spin-orbit interaction, t(SO)=0. II symplectic where B=0 t(SO) 0. The two give exactly same universal QSHE value 0.285+/-0.005e/4pi regardless symmetry. also examined third model exhibits quadratic dispersion and obtained results....

Wide bandgap β-Ga2O3 is an ideal candidate material with broad application prospects for power electronic components in the future. Aiming at requirements of space photoelectric devices, this work studies influence 40 MeV Si ion irradiation on microstructure and optical properties epi-wafers. Raman spectroscopy analysis confirms that destroys symmetric stretching mode tetrahedral–octahedral chains epi-wafers, obtained experimental evidence leads to enhanced defect density VO VGa–VO from...