A5023795076- Semiconductor materials and devices
- Analytical Chemistry and Sensors
- Electronic and Structural Properties of Oxides
- Gas Sensing Nanomaterials and Sensors
- Ferroelectric and Piezoelectric Materials
- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Electrochemical sensors and biosensors
- Advancements in Semiconductor Devices and Circuit Design
- Acoustic Wave Resonator Technologies
- Electrochemical Analysis and Applications
- Multiferroics and related materials
- Advanced biosensing and bioanalysis techniques
- Nanowire Synthesis and Applications
- Silicon Nanostructures and Photoluminescence
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Electrical and Thermal Properties of Materials
- Transition Metal Oxide Nanomaterials
- Semiconductor materials and interfaces
- Microfluidic and Capillary Electrophoresis Applications
- Microfluidic and Bio-sensing Technologies
- Copper Interconnects and Reliability
- Advanced Sensor and Energy Harvesting Materials
Hong Kong University of Science and Technology
2025
University of Hong Kong
2025
Chang Gung University
2015-2024
Chang Gung Memorial Hospital
2016-2024
Linkou Chang Gung Memorial Hospital
2024
Hokkaido University
2023
Fu Jen Catholic University
2022
Anhui Medical University
2010
Industrial Technology Research Institute
2004
United Microelectronics (United States)
2003
In this study, we reported the forming-free resistive switching behavior in Ru/RE2O3/TaN (RE = Nd, Dy, and Er) memory devices using thin Nd2O3, Dy2O3, Er2O3 films fabricated with full room temperature process. The dominant conduction mechanisms of low-resistance state high-resistance are Ohmic behavior. Ru/Dy2O3/TaN device exhibited high resistance ratio, nondestructive readout, reliable data retention, good endurance. has a great potential for application nonvolatile memory.
Abstract In this letter, we investigated the structural and electrical characteristics of high- κ Er 2 O 3 TiO 5 gate dielectrics on amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with dielectric, a-IGZO TFT device incorporating an dielectric exhibited a low threshold voltage 0.39 V, high field-effect mobility 8.8 cm /Vs, small subthreshold swing 143 mV/decade, I / off current ratio 4.23 × 10 7 , presumably because reduction in oxygen vacancies...
Inorganic perovskites are known for their excellent photothermal stability; however, the stability of all‐inorganic n‐i‐p perovskite solar cells (PSCs) is compromised due to ion diffusion and free radical‐induced degradation caused by use doped Spiro‐OMeTAD hole transport materials (HTMs). In this study, two isomeric D‐A‐D type small molecules, namely HBT HiBT, were developed used as dopant‐free HTMs, using 2,1,3‐benzothiadiazole or benzo[d][1,2,3]thiadiazole acceptor moieties. The HiBT...
Inorganic perovskites are known for their excellent photothermal stability; however, the stability of all‐inorganic n‐i‐p perovskite solar cells (PSCs) is compromised due to ion diffusion and free radical‐induced degradation caused by use doped Spiro‐OMeTAD hole transport materials (HTMs). In this study, two isomeric D‐A‐D type small molecules, namely HBT HiBT, were developed used as dopant‐free HTMs, using 2,1,3‐benzothiadiazole or benzo[d][1,2,3]thiadiazole acceptor moieties. The HiBT...
Objective. We have performed a large-scale replication study based on our previous genome-wide association (GWAS) of SLE in the Chinese Han population to further explore additional genetic variants affecting susceptibility SLE. Methods. Thirty-eight single nucleotide polymorphisms from GWAS were genotyped two cohorts (total 3152 cases and 7050 controls) using Sequenom Massarray system. Association analyses logistic regression with gender or sample as covariate. Results. evidence for...
Metal-oxide-semiconductor capacitors with Pr2O3/oxynitride laminated gate dielectrics were fabricated. The current transportation of Al/Pr2O3/SiON/n-Si devices was studied at temperatures ranging from 300 to 400 K. dominant conduction mechanism low electric field (<0.6 MV/cm) is the hopping in dielectrics. determined distance and activation energy about 1.5 nm 50±1 meV, respectively. However, high (>2 Poole–Frenkel emission which trap level Arrhenius plot 0.56±0.01 eV.
In this paper, we present a high-performance double-gate (DG) amorphous indium-gallium-zinc-oxide (α-InGaZnO) ion-sensitive field-effect transistor (ISFET) using three HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate dielectric thicknesses as top (TG). The DG structure α-InGaZnO TFTs with 40-nm TG exhibited small threshold voltage of 50 mV, low subthreshold swing 144.1 mV/decade, and high ION/IOFF current ratio 4.5×10 <sup...
A high-k erbium oxide thin film was grown on silicon substrate by reactive rf sputtering. It is found that the capacitance value of Er2O3 gate dielectric with TaN metal annealed at 700°C higher compared to other annealing temperature and exhibits a lower hysteresis voltage as well interface trap density in C-V curves. They also show negligible charge trapping under high constant stress. This phenomenon attributed rather well-crystallized decrease interfacial layer Er silicate thickness...
In this letter, we reported a high-k gadolinium oxide (Gd2O3) gate dielectric formed by reactive rf sputtering. It is found that the Gd2O3 film exhibits excellent electrical properties such as low leakage current density, high breakdown voltage, and almost no hysteresis frequency dispersion in C-V curves comparable to of HfO2 film. This indicates postprocessing treatments can reduce large amount interface trap passivate trapped charge at defect sites.
We investigated the impact of Ti doping in Sm2O3 dielectric on electrical stress-induced instability amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time a-IGZO TFT devices, a small initial positive shift followed by negative threshold voltage is characterized dielectric, whereas only observed for Ti-doped dielectric. The can be explained charge trapping film and/or Sm2O3/IGZO interfaces, while probably due to extra charges from IGZO channel...
Investigated transfer characteristics on threshold voltage instability behavior in amorphous indium-gallium-zinc oxide thin-film transistor (α-IGZO TFT). A two-step electrical degradation of α-IGZO TFT was found under gate-bias stress. usual small positive shift followed by a special negative is characterized the device. We suggest that due to charge trapping gate dielectric and/or at channel/dielectric interface, while assigned electric field-induced extra electron carriers from H <sub...
In this letter, the authors reported a high-k neodymium oxide gate dielectric grown by reactive rf sputtering. It is found that Nd2O3 after annealing at 700°C exhibits excellent electrical properties such as low equivalent thickness, high electric breakdown field, and almost no hysteresis frequency dispersion in C-V curves. This indicates treatment can prevent interfacial layer silicate formation, reduce large amount of interface trap, passivate trapped charge defect sites.