A5043786513- Advanced Memory and Neural Computing
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- Ferroelectric and Piezoelectric Materials
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Analytical Chemistry and Sensors
- Thin-Film Transistor Technologies
- Electrochemical Analysis and Applications
- Gas Sensing Nanomaterials and Sensors
- Neuroscience and Neural Engineering
- Silicon and Solar Cell Technologies
- Electrical and Thermal Properties of Materials
- Hormonal and reproductive studies
- Copper Interconnects and Reliability
- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Photonic and Optical Devices
- Microwave Dielectric Ceramics Synthesis
- Advanced Condensed Matter Physics
- ZnO doping and properties
- Doping in Sports
- Organic Electronics and Photovoltaics
- Integrated Circuits and Semiconductor Failure Analysis
Chang Gung University
2010-2017
National Chi Nan University
2014-2015
We investigated the impact of Ti doping in Sm2O3 dielectric on electrical stress-induced instability amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time a-IGZO TFT devices, a small initial positive shift followed by negative threshold voltage is characterized dielectric, whereas only observed for Ti-doped dielectric. The can be explained charge trapping film and/or Sm2O3/IGZO interfaces, while probably due to extra charges from IGZO channel...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Somnath Mondal, Hung-Yu Chen, Jim-Long Her, Fu-Hsiang Ko, Tung-Ming Pan; Effect of Ti doping concentration on resistive switching behaviors Yb2O3 memory cell. Appl. Phys. Lett. 20 August 2012; 101 (8): 083506. https://doi.org/10.1063/1.4747695 Download citation file: Ris (Zotero) Reference Manager EasyBib...
In this article, the current conduction and resistive switching (RS) behavior in flexible Sm2O3 Lu2O3 random access memories (ReRAM) are investigated. Amorphous thin films were deposited at room temperature by radio-frequency magnetron sputtering on polyethylene terephthalate substrate. The structural morphologies of strongly depend lattice energy oxides. dominant mechanism oxide layer changes from electrode control Schottky emission to bulk controlled space-charge-limited-current Lu2O3....
In this article, the resistive switching (RS) behaviors in Lu2O3 thin film for advanced flexible nonvolatile memory applications are investigated. Amorphous films with a thickness of 20 nm were deposited at room temperature by radio-frequency magnetron sputtering on polyethylene terephthalate substrate. The structural and morphological changes characterized x-ray diffraction, atomic force microscopy, photoelectron spectroscopy analyses. Ru/Lu2O3/ITO device shows promising RS behavior...
In this paper, we investigated the electroforming-free resistive switching (RS) behavior in Ru/RE <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TaN (rare-earth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of -based devices low-resistance state is ohmic emission, whereas Tm , Yb Lu high-resistance are space charge...
A conventional approach of doping to control the bistable resistance switching in Yb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> was investigated for nonvolatile memory applications. With help Ti into oxide films during process, better cycle-to-cycle distribution and voltage uniformity were found due modulation current conduction mechanism from space-charge-limited Schottky type...
We fabricate the Ni/Lu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TaN metal-insulator-metal capacitor with a high capacitance density of 7.5 fF/μm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , relatively small quadratic voltage coefficient (VCC) 75 ppm/V low leakage current 5 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">-8</sup> A/cm at -1 V, and an excellent...
A high-performance very low-power flexible Ni/Sm <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /indium tin oxide (ITO) resistive device for nonvolatile memories is demonstrated. The exhibits a good memory margin of >10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> ON/OFF current ratio with low switching power <;25 μW. Good retention...
In this letter, the effect of Al and Ni top electrodes in resistive switching behavior Al/Yb2O3/TaN Ni/Yb2O3/TaN memory devices is proposed. The device demonstrates no such performance as applying bias on both bottom electrodes, whereas reveals bipolar with a high resistance ratio 104 for over 200 cycles responses good data retention window about 105 at 85°C, extrapolated up to 10 years. dynamic ascribed conductivity modulation by oxygen ions/vacancies controlled electrochemical reaction...
We report the effect of titanium content on sensing and impedance characteristics TbTixOy membranes deposited Si(100) substrates through reactive cosputtering for electrolyte–insulator–semiconductor (EIS) pH sensors. X-ray diffraction (XRD) Auger electron spectroscopy (AES) were used to investigate structural chemical features these films prepared under different growth conditions (Ti plasma power from 80 120 W). The EIS sensor featuring membrane at 100 W condition exhibited best (pH...
The structural and electrical properties of Lu2O3 dielectric films deposited by radio frequency (RF) magnetron sputtering on TaN electrode have been studied for metal–insulator–metal (MIM) capacitor in analog/RF applications. From X-ray diffraction study, it is observed that the remain amorphous within thermal budget (400°C) back-end-of-line process. root mean square value surface roughness film decreases after annealing at 400°C using atomic force microscopy. chemical composition was...
In this study, we develop a high-performance metal-insulator-metal (MIM) capacitor using high- <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">k</i> Lu <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> amorphous film for radio-frequency and mixed-signal applications. The Ni/ /TaN exhibited high capacitance density, low leakage-current relatively quadratic voltage coefficient of...
In this letter, we investigate the structural properties and electrical characteristics of Al–SiO2–Y2O3–SiO2–poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. AOYOP TFT device exhibited a large window 2.5 V, long charge retention time ten years with minimal loss ∼15%, better endurance performance for P/E cycles up to 105.
O n e-d im so al cndu t r u h s nanotubes and nanowires are being actively investigated for ap-plications in electronic, photonic sensor devices [1]. Group-IV semiconductor nanowire potentially attractive because of their compatibility with existing Si complementary metal-oxide-semiconductor (MOS) integrated circuit technology. The use floating gate memory composed isolated dots reduces charge loss a scaled device improves characteris-tics such as endurance, write/erase speeds low...
Resistive switching in Ni/Yb2O3/TaN programmable memory cells was investigated. We proposed a rearrangement of oxygen vacancies under electric field plays role resistive switching. Under negative bias, or other metallic defects migrate through Yb2O3 oxide and SET occurs. A reproducible resistance behavior observed with high ratio about 105 excellent data retention, good immunity to read disturbance, are also revealed. In particular, the simple sandwich structure electrical performance cell...