A5000841886- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- Advanced Memory and Neural Computing
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- Advanced Sensor and Energy Harvesting Materials
- GaN-based semiconductor devices and materials
- Neuroscience and Neural Engineering
National Taiwan University
2022-2025
National Taipei University
2023
Ferroelectric Hf0.5Zr0.5O2 (HZO) thin films emerge as promising candidates for next-generation memory devices; however, the device performance is strongly correlated to interfacial structure. In this study, neutron reflectivity was used first time conduct an in-depth analysis of ferroelectric W/HZO/W devices, leveraging high sensitivity scattering length density (SLD) buried interfaces. We explored impact different atomic layer deposition (ALD) techniques─thermal, plasma, and annealing...
Abstract In this study, platinum (Pt) and tungsten (W), two materials with dissimilar coefficients of thermal expansion (CTE) work functions (WF), are used as the top electrode (TE) bottom (BE) in metal/ferroelectric/metal (MFM) structures to explore ferroelectricity hafnium zirconium oxide (HZO) a thickness less than 10 nm. The electrical measurements indicate that higher CTE mismatch between HZO TE/BE is beneficial for enhancing ferroelectric properties nanoscale thin films. different WFs...
Area-selective atomic layer deposition (AS-ALD) is gaining widespread attention due to the urgent demand for a self-aligned and "bottom-to-top" fabrication process in advanced semiconductor technology. In this study, an innovative concept of "atomic nucleation engineering (ALNE)" "surface recovery (SR)" techniques proposed realize AS-ALD Al2O3 between metal (W) dielectric (SiO2) without involvement inhibitors. The ALNE treatment utilized selectively remove weakly adsorbed precursors on...
This study demonstrates the precise tailoring of material properties nanoscale thin films and electrical AlN RRAM devices by atomic layer annealing.
This study investigates the effect of atomic layer annealing (ALA) on resistive switching characteristics SiNx-based random access memory (RRAM) devices. The energy transfer occurs in ALA process via situ plasma treatment introduced each cycle deposition. reduces nitrogen vacancies and increases film density SiNx with a thickness only 3.5 nm, as revealed by X-ray reflectivity photoelectron spectroscopy analyses. Consequently, RRAM devices subjected to demonstrate lower operating voltages...