A5006993855- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Electronic and Structural Properties of Oxides
- ZnO doping and properties
- Ga2O3 and related materials
- Ferroelectric and Piezoelectric Materials
- GaN-based semiconductor devices and materials
- Nanowire Synthesis and Applications
- MXene and MAX Phase Materials
- Myofascial pain diagnosis and treatment
- Spine and Intervertebral Disc Pathology
- Advancements in Semiconductor Devices and Circuit Design
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- Musculoskeletal pain and rehabilitation
Shanghai University
2022-2024
National Taiwan University
2015-2023
National Cheng Kung University
2022
Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB) between antiferroelectric, ferroelectric, and paraelectric phases. By increasing HfO2 seeding with only 2 monolayers, overlying ZrO2 experiences dramatic transition across MPB. Conspicuous ferroelectric properties including record-high remanent polarization (2Pr ≈ 60 µC cm-2 ), wake-up-free operation, high compatibility advanced semiconductor technology nodes, are achieved in sub-6 nm thin film. The...
Abstract In this study, platinum (Pt) and tungsten (W), two materials with dissimilar coefficients of thermal expansion (CTE) work functions (WF), are used as the top electrode (TE) bottom (BE) in metal/ferroelectric/metal (MFM) structures to explore ferroelectricity hafnium zirconium oxide (HZO) a thickness less than 10 nm. The electrical measurements indicate that higher CTE mismatch between HZO TE/BE is beneficial for enhancing ferroelectric properties nanoscale thin films. different WFs...
Area-selective atomic layer deposition (AS-ALD) is gaining widespread attention due to the urgent demand for a self-aligned and "bottom-to-top" fabrication process in advanced semiconductor technology. In this study, an innovative concept of "atomic nucleation engineering (ALNE)" "surface recovery (SR)" techniques proposed realize AS-ALD Al2O3 between metal (W) dielectric (SiO2) without involvement inhibitors. The ALNE treatment utilized selectively remove weakly adsorbed precursors on...
Short channel effects in Si junctionless transistors with a gate length below 10 nm are reduced by the ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>gate oxide.
An organic photodetector prepared by a simple solution method based on renewable citrus pectin with an optimized concentration of aluminum nitrate (AlC05) is introduced herein. The effects different concentrations the morphology and optical properties were investigated through various characterization methods. AlC 0.5 mg/mL was found to provide highest on/off ratio acceptable rise decay times. Also, device (Al/AlC0.5/ITO) exhibited good stability repeatability at 0.1 V bias under 440 nm...