Yu‐Tung Yin

ORCID: 0000-0002-8366-7382
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About
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Research Areas
  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • ZnO doping and properties
  • Ferroelectric and Piezoelectric Materials
  • Ga2O3 and related materials
  • Gas Sensing Nanomaterials and Sensors
  • TiO2 Photocatalysis and Solar Cells
  • GaN-based semiconductor devices and materials
  • Advanced Memory and Neural Computing
  • Nanowire Synthesis and Applications
  • Advanced Photocatalysis Techniques
  • Advancements in Semiconductor Devices and Circuit Design
  • Plasma Diagnostics and Applications
  • MXene and MAX Phase Materials
  • Electronic and Structural Properties of Oxides
  • Acoustic Wave Resonator Technologies
  • Analytical Chemistry and Sensors
  • Copper-based nanomaterials and applications
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Advanced Chemical Sensor Technologies
  • Microfluidic and Bio-sensing Technologies
  • Particle accelerators and beam dynamics
  • Metal and Thin Film Mechanics
  • Integrated Circuits and Semiconductor Failure Analysis
  • Advanced MEMS and NEMS Technologies

National Taiwan University
2018-2025

Northeastern University
1999-2023

National Taiwan University of Science and Technology
2009-2014

In this study, ZnO nanowire arrays were prepared using a hydrothermal method. During growth, polyethyleneimine (PEI) and ammonia added to adjust the structure optical properties of nanowires. Emission analysis revealed visible photoluminescence emissions from nanowires produced under various growth conditions. To correlate relationship between structural defects in nanowires, we employed X-ray absorption spectroscopy (XAS) characterize coordination number bond length On basis analytical...

10.1021/jp2056199 article EN The Journal of Physical Chemistry C 2011-10-07

The scaling laws associated with the miniaturization of planar inductively coupled plasmas (ICPs) are investigated. applications for miniature ICPs include microelectromechanical systems (MEMS) chemical analysis and micro ion propulsion systems. Langmuir probe microwave interferometry measurements three spiral-shaped coil diameters 5, 10, 15 mm show that electron density typically falls in range 10/sup 16/-10/sup 17/ m/sup -3/. is about an order magnitude lower than large-scale as a result...

10.1109/27.799834 article EN IEEE Transactions on Plasma Science 1999-01-01

Based on the engineering of TiN capping layer, tailoring crystalline phases and paraelectric(PE)/antiferroelectric(AFE)/ferroelectric(FE) properties nanoscale ZrO2 thin films are demonstrated without any post-annealing treatment. The by layer leads to conversion from PE AFE electrical characteristics, while removal results in AFE-to-FE phase transformation ZrO2. nano-beam electron diffraction, high-resolution transmission microscopy X-ray diffraction characterizations identify presence...

10.1016/j.matdes.2020.109020 article EN cc-by-nc-nd Materials & Design 2020-08-04

In this study, ZnO nanoparticles (ZnO NPs) were conformally covered on the surfaces of nanowires NWs) with high diffusion coefficient (1.2 × 10−2 cm2 s−1) to make a composite photoanode. By using N719 sensitize photoanode, conversion efficiency can reach 7.14%.

10.1039/c2nr33249c article EN Nanoscale 2013-01-01

This paper reports a facile continuous flow injection (CFI) process to synthesize high-quality long zinc oxide nanowire arrays (ZnO-NAs) using hydrothermal method. In previous related studies, the photoluminescence (PL) spectra of ZnO-NAs synthesized batch exhibit highly visible emission caused by defect structures. contrast process, grown CFI can reduce in PL effectively, demonstrating qualities as superior those process. To understand difference between processes and inductively coupled...

10.1021/cg201316f article EN Crystal Growth & Design 2012-01-12

Heteroepitaxy with large thermal and lattice mismatch between the semiconductor substrate is a critical issue for high-quality epitaxial growth. Typically, high growth temperatures (>1000 °C) are required to achieve GaN epilayers by conventional metal–organic chemical vapor deposition. In this study, heteroepitaxy realized atomic layer annealing epitaxy (ALAE) at low temperature of 300 °C. The layer-by-layer, in situ He/Ar plasma treatment power was introduced each cycle deposition...

10.1021/acssuschemeng.8b03982 article EN ACS Sustainable Chemistry & Engineering 2018-12-12

Because the dielectric constant (K), leakage current density (Jg), and interfacial state (Dit) are critical to high-K gate dielectrics, layer-by-layer, in situ atomic layer bombardment (ALB) is proposed explored enhance these electrical properties this study. The helium/argon plasma was performed layer-by-layer each cycle of deposition (ALD) for preparing dielectrics. As compared with untreated layer, ALB treatment contributes a significant reduction Jg by ∼3 orders magnitude, together an...

10.1021/acsaelm.9b00080 article EN ACS Applied Electronic Materials 2019-06-06

Abstract Negative capacitance (NC) has been proposed to realize sub-Boltzmann steep-slope transistors in recent years. We provide experimental evidences and theoretical view for ferroelectric NC inductance induced by polarization switching, based on an as-deposited nanoscale zirconium oxide (ZrO 2 ) layer (nano- f -ZrO ). The results are demonstrated nano- , including resistor–inductor–capacitor oscillations, positive reactance Nyquist impedance plot, enhancement of capacitance, sub-60...

10.1038/s42005-019-0120-1 article EN cc-by Communications Physics 2019-03-21

The electron temperature and ion density produced by a microfabricated plasma generator are characterized in both argon gas air. sustains discharge inductively coupling 450 MHz rf power into small (10 mm diameter) vacuum chamber. coupled source is surface micromachined on glass wafer electroplating planar spiral inductor two interdigitated capacitors. A can be sustained using pressures between 0.1 10 Torr powers 0.3 3 W. increases from 1010 to 1011 cm−3 over this range of power. decreases 4...

10.1116/1.1288945 article EN Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena 2000-09-01

We successfully synthesized well aligned ZnO nanowire (ZnO NW) arrays on Si (100) and indium tin oxide (ITO) glass substrates at the low temperature of 500 °C by a two-stage growth process without metal catalyst. The NWs had diameters in range 50−100 nm lengths 5−8 μm. X-ray diffraction showed that NW single-crystal wurtzite structures grew along c-axis. Photoluminescence spectra revealed strong UV band 3.2 eV broad green 2.3 room temperature. also observed alignment situation emission was...

10.1021/jp908114p article EN The Journal of Physical Chemistry C 2009-11-19

In this study, a long ZnO nanowire (NW) array was synthesized using continuous flow injection (CFI) process to replace the conventional multi-batch process. According electrochemical impedance spectroscopy (EIS) measurements, diffusion coefficient of NW by CFI is higher than that NWs addition, electron transit time found depend on thickness array. To effectively improve conversion efficiency dye-sensitized solar cells (DSSCs), high with 1.2 × 10−2 cm2 s−1 an ammonia-assisted NPs were covered...

10.1039/c3ra22458a article EN RSC Advances 2013-01-01

The economic growth in many parts of the world during past decade was sustainable because affordable energy prices. dependence on oil and electricity has made a vital component our needs. In 20th century, population quadrupled, demand increased by 16 times. exponential is exhausting fossil fuel supply at an alarming rate. About 13 terawatts (TW) currently needed to sustain lifestyle 6.5 billion people worldwide. By year 2050, we will need additional 10 TW clean maintain current lifestyle. To...

10.1109/mnano.2014.2314182 article EN IEEE Nanotechnology Magazine 2014-05-02

The influence of the length ZnO nanowire arrays (ZnO-NWAs) on performance dye-sensitized solar cells (DSSCs) was studied. Three types ZnO-NWAs were grown using a multi-batch process, continuous flow injection (CFI) and NH3-assisted CFI process. by process are suitable as photoanodes DSSCs because their strong optical structural properties. In addition, transit time an determined to be approximately 0.11 ms. previous studies, electron recombination lifetime used determine collection...

10.1039/c2jm35413f article EN Journal of Materials Chemistry 2012-01-01

Area-selective atomic layer deposition (AS-ALD) has attracted attention due to the process demand for semiconductor device scaling. Here, we propose "atomic nucleation engineering (ALNE)" technique, an inhibitor-free AS-ALD of oxide (Al2O3) and a nitride (AlN) with nearly 100% selectivity between dielectric (SiO2) metal (Pt). The key is add radio-frequency substrate bias after precursor exposure purge in each ALD cycle, where energy from ignited plasma selectively removes precursors on owing...

10.1021/acs.chemmater.1c00823 article EN Chemistry of Materials 2021-07-08

The impacts of the atomic layer bombardment (ALB), which is in situ layer-by-layer inert gas plasma treatment introduced each deposition (ALD) cycle, explored to enhance dielectric characteristics nanoscale HfO2 thin films. Different ion modes, including after precursor (BAP) and oxidant (BAO), were examined detail understand ALB behaviors. In contrast with detrimental effects caused by BAP process, BAO contributes an about 3-orders-of-magnitude reduction leakage current density (Jg) 26%...

10.1021/acsaelm.0c00388 article EN ACS Applied Electronic Materials 2020-07-10

Tailoring of crystalline phases and dielectric properties ZrO2 thin films are demonstrated by capping a nanoscale TiN layer prepared plasma-enhanced atomic deposition. The in-plane tensile strain induced the gives rise to dramatic paraelectric-to-antiferroelectric phase transformation in significant capacitance enhancement up 209%. result is attributed formation tetragonal with out-of-plane compressive due presence interfacial TiOxNy, as revealed nanobeam electron diffraction, X-ray...

10.1021/acsaelm.1c00161 article EN ACS Applied Electronic Materials 2021-04-08

Abstract In this article, we reported a low temperature solvothermal method to synthesize ZnO nanorods in one pot. order study the growth mechanism of nanorods, various preparative parameters, such as zinc species concentration, molar concentration ratio hydroxide [OH ‐ ] [Zn 2+ ], and surfactants, have been systematically examined. According analysis, aspect was enlarged with increase ]. However, mean diameter only causes subtle change. Additionally, influence surfactants studied by two...

10.1002/jccs.201190117 article EN Journal of the Chinese Chemical Society 2011-10-01
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