A5086268600- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Advanced Semiconductor Detectors and Materials
- Ferroelectric and Piezoelectric Materials
- Quantum and electron transport phenomena
- Microwave Dielectric Ceramics Synthesis
- Chalcogenide Semiconductor Thin Films
- Semiconductor Lasers and Optical Devices
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Dielectric properties of ceramics
- Magnetic and transport properties of perovskites and related materials
- Semiconductor materials and devices
- Multiferroics and related materials
- Electrical and Thermal Properties of Materials
- Advanced Condensed Matter Physics
- Glass properties and applications
- Thin-Film Transistor Technologies
- Composite Material Mechanics
- Natural Fiber Reinforced Composites
- Photonic and Optical Devices
- Ga2O3 and related materials
- Hygrothermal properties of building materials
- Electronic and Structural Properties of Oxides
- Nanowire Synthesis and Applications
Majmaah University
2015-2025
University of Monastir
2015-2023
Laboratoire des technologies innovantes
2023
Technologies pour la Santé
2023
University of Kairouan
2021
Institut National des Sciences Appliquées de Toulouse
2001-2006
Centre National de la Recherche Scientifique
2001-2005
Laboratoire de physique de la matière condensée
2001-2002
We have studied the spin dynamics in self-organized InAs/GaAs quantum dots by time-resolved photoluminescence performed under strictly resonant excitation. At low temperature, we observe no decay of both linear and circular luminescence polarization. This demonstrates that carrier spins are totally frozen on exciton lifetime scale.
Our present study focuses on examining the thermal, structural and luminescent characteristics of barium samarium oxide additions metaphosphate glasses. Results indicate current glasses may be a good candidate for displaying colours or visible lasers in red-orange spectral region.
Maghemite (γ-Fe2O3) nanoparticles have attracted considerable interest for electronic applications due to their tunable electrical properties. Doping strategies offer an effective way optimize resistive behavior use in devices. In this study, cobalt (Co) was incorporated into γ-Fe2O3 enhance its X-ray diffraction (XRD) confirmed the retention of cubic P4332 phase, with Co doping inducing subtle lattice distortions ionic substitution. Scanning and transmission electron microscopy (SEM/TEM)...
Stacked InAs quantum dots (QDs) grown on InP(113)B are analyzed both experimentally and theoretically in order to study the influence of electronic vertical coupling between QD layers. Improved growth conditions enable us control optimum height samples, thus yielding an emission wavelength our nanostructures at about 1.55μm room temperature. Three samples containing three layers with different spacing studied. The structure is studied by continuous-wave photoluminescence time-resolved...
In this work, we perform a theoretical analysis of the electronic and optical properties CdS quantum dot (QD) encapsulated in ZnSe matrix. The intersubband energy levels matching wave functions are calculated using effective mass approximation (E.M.A) compact density matrix approach. effect self-energy contribution due to charging QD with has been taken into account from beginning. We found that linear nonlinear considerably impacted by size parameter intensity I. results obtained have...
Abstract In the present paper, we have explored impact of doping concentration and applied electric field on both linear nonlinear optical properties based upon intersubband transitions CdSe/MgSe single quantum well (QWs) in framework Effective Mass Approximation (EMA) using compact density matrix approach. The energy levels their relative wave functions are obtained by solving coupled equations Schrödinger-Poisson Finite Difference Method (FDM) under envelope approximation. third order...
These latter results demonstrate that the dilute-bismide GaAsP/GaAsBi/GaAsP laser heterostructure arouses a great interest due to their high-power near-infrared light emitting diodes (LED) and (LD) operating at room temperature (RT).