A5068033542- Silicon and Solar Cell Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Ion-surface interactions and analysis
- Robot Manipulation and Learning
- Thin-Film Transistor Technologies
- Human Pose and Action Recognition
- Robotics and Sensor-Based Localization
- Speech and Audio Processing
- Robotic Path Planning Algorithms
- Generative Adversarial Networks and Image Synthesis
- Silicon Nanostructures and Photoluminescence
- Music and Audio Processing
- Silicon Carbide Semiconductor Technologies
- Advanced Image Processing Techniques
- Advanced Surface Polishing Techniques
- Face recognition and analysis
- Robotic Mechanisms and Dynamics
- Electronic and Structural Properties of Oxides
- Multimodal Machine Learning Applications
- Advanced Vision and Imaging
- Model-Driven Software Engineering Techniques
- Advanced Software Engineering Methodologies
Albany Medical Center Hospital
2025
Massachusetts Institute of Technology
2023-2024
Indian Institute of Technology Hyderabad
2023
SRM Institute of Science and Technology
2021-2023
Robotics Research (United States)
2023
Noida International University
2018-2022
Microsoft (India)
2020-2021
Carnegie Mellon University
2020-2021
Jaypee Institute of Information Technology
2020
PES University
2016
We have investigated the fundamental mechanism underlying hydrogen-induced exfoliation of silicon, using a combination spectroscopic and microscopic techniques. studied evolution internal defect structure as function implanted hydrogen concentration annealing temperature found that consists number essential components in which plays key role. Specifically, we show chemical action leads to formation (100) (111) surfaces above 400 °C via agglomeration initial structure. In addition, molecular...
We have investigated the process of thin film separation by gas ion implantation and wafer bonding, as well more basic phenomenon blistering, on which technique is based. show that when H He implants are combined they produce a synergistic effect enables thin-film at much lower total dose than required for either or alone. By varying doses we been able to isolate physical chemical contributions gases blistering processes. find essential role interact chemically with damage create...
Process refinements to improve the performance of FinFETs are described. Hydrogen annealing is shown provide high surface quality on etched fin sidewalls for improved drive current and noise performance. Appropriate V/sub t/ achieved in lightly doped p-channel using Molybdenum (Mo) as gate-electrode material first time. Multiple values via gate work function engineering by selective implantation Mo.
The effect of annealing in diluted oxygen versus inert environment on the structural and electrical characteristics thin silicon dioxide layers with embedded Si nanocrystals fabricated by very low-energy implantation (1 keV) is reported. Annealing increases thickness control oxide, improves integrity oxide narrows size distribution without affecting significantly their mean (∼2 nm). Strong charge storage effects at low gate voltages enhanced retention times are observed through measurements...
Infrared spectroscopy and secondary ion mass spectrometry are used to elucidate the mechanism by which co-implantation of He with H facilitates shearing crystalline Si. By studying different implant conditions, we can separate relative contributions damage, internal pressure generation, chemical passivation enhanced exfoliation process. We find that acts physically as a source but also in an indirect sense, leading reconversion molecular H2 bound Si–H “VH2-like” defects. postulate it is...
The reduction of transient enhanced diffusion (TED) with reduced implantation energy has been investigated and quantified. A fixed dose 1×1014 cm−2 Si+ was implanted at energies ranging from 0.5 to 20 keV into boron doping superlattices the buried marker layers measured for anneals 810, 950, 1050 °C. linearly decreasing dependence diffusivity enhancement on ion range is observed all temperatures, extrapolating ∼1 0 keV. This consistent our expectation that zero there would be no excess...
A technique for profiling the clustered-vacancy region produced by high-energy ion implantation into silicon is described and tested. This takes advantage of fact that metal impurities, such as Au, are trapped in excess vacancies MeV Si implants silicon. In this work, regions 1-, 2-, 8-MeV have been labeled with Au diffused from front surface at 750 °C. The was profiled Rutherford backscattering spectrometry. dynamics were monitored isochronal annealing 750–1000 °C, isothermal 950 10–600 s....
Reports measurements of the DC characteristics sub-100 nm nMOSFETs that employ low leakage ultra-thin gate oxides only 1-2 thick to achieve high current drive capability and transconductance. We demonstrate I/sub Dsat//spl ap/1.8 mA//spl mu/m can be achieved with a 60 at 1.5 V using 1.3-1.4 oxide less than 20 nA//spl mu/m/sup 2/. Furthermore, we find Dsat/ deteriorates for thicker or thinner this.
We demonstrate that the excess vacancies induced by a 1 MeV Si implant reduce interstitials generated 40 keV during thermal annealing when these two implants are superimposed in silicon. It is shown this previously observed reduction dominated vacancy annihilation and not gettering to deeper interstitial-type extended defects. Interstitial supersaturations were measured using B doping superlattices (DSL) grown on silicon-on-insulator (SOI) substrate. Implanting ions into DSL/SOI structure...
We have investigated the diffusion enhancement mechanism of boron-enhanced (BED), wherein boron diffusivity is enhanced four to five times over equilibrium at 1050 °C in proximity a silicon layer containing high concentration. It demonstrated that BED driven by excess interstitials injected from concentration during annealing. For evaporated layers, observed above threshold between 1% and 10%, though it appears be closer for B-implanted layers. sub-keV B implants threshold, dominates...
Extended defects from 5-, 2-, and 1-keV Si+ ion implantation are investigated by transmission electron microscopy using doses of 1 3×1014 cm−2 annealing temperatures 750 to 900 °C. Despite the proximity surface, {311}-type observed even for keV. Samples with a peak concentration excess interstitials exceeding ∼1% atomic density also contain some {311} which corrugated across their width. These so-called zig-zag more stable than ordinary defects, having dissolution rate at °C is ten times...
In warehouse and manufacturing environments, manipulation platforms are frequently deployed at conveyor belts to perform pick-and-place tasks. Because objects on the moving, robots have limited time pick them up. This brings requirement for fast reliable motion planners that could provide provable real-time planning guarantees, which existing algorithms do not provide. addition efficiency, success of tasks relies heavily accuracy perception system is often noisy, especially if target...
Silicon layers containing B in excess of a few atomic percent create supersaturation Si self-interstitials the underlying Si, resulting enhanced diffusion substrate [boron-enhanced (BED)]. The temperature and time dependence BED is investigated here. Evaporated boron as well ultralow energy 0.5 keV B-implanted were annealed at temperatures from 1100 to 800 °C for times ranging 3 3000 s. Isochronal 10 s anneals reveal that effect increases with increasing up 1050 then decreases. In contrast,...
Current-mode algorithmic pipelined analog-to-digital converters (ADC) are suitable for sensor applications due to their area and power advantage at low resolutions. In of distributed sensing using redundant sensors, the speed resolution ADC is less important than energy per bit conversion. Such performance was achieved by current-mode technique with transistors operating in sub-threshold region. Both current mode techniques allow low-voltage low-power operation. An improved current-mode,...
Reducing implant energy is an effective way to eliminate transient enhanced diffusion (TED) due excess interstitials from the implant. It shown that TED a fixed Si dose implanted at energies 0.5 20 keV into boron doping-superlattices decreases linearly with decreasing ion range, virtually disappearing sub-keV energies. However, for B implants remains and x/sub j/ limited /spl ges/100 nm 1050/spl deg/C. We term this enhancement, which arises in presence of atomic concentrations surface ap/6%,...
The effect of laser thermal processing (LTP) on implantation-induced defect evolution and transient enhanced diffusion (TED) boron was investigated. A 270-Å-thick amorphous layer formed by 10 keV Si+ implantation melted regrown using a 20 ns ultraviolet pulse. Transmission electron microscopy revealed that recrystallization the following LTP results in high concentration stacking faults microtwins region. Also, end-of-range loop during subsequent 750 °C furnace annealing, is different sample...
The interaction of intrinsic oxygen in Czhochralski silicon with implantation damage induced by 2.0 MeV Si+ ions has been investigated as a function annealing temperature and time. Four distinct regions localization are revealed secondary ion mass spectrometry following sample annealing. different correlated either near surface vacancy-rich region or the buried layer extended defects projected range. relative concentration each depends on competition between gettering out-diffusion to...
The need of an ultrashallow junction technology for the extension p-FinFETs has been investigated by integrated process and device simulations. For devices with 60 nm physical gate length, whose extensions are activated in a low thermal-budget (spike anneal), it is found that I/sub off/-I/sub on/ performance invariant respect to implant energy. Nevertheless, short-channel behavior worsens. This can be remedied adding spacers both sides before implant, resulting virtually identical dc...