A5021031407- Semiconductor Quantum Structures and Devices
- Advanced Semiconductor Detectors and Materials
- Nanowire Synthesis and Applications
- Semiconductor Lasers and Optical Devices
- Spectroscopy and Laser Applications
- Photonic and Optical Devices
- Advanced Optical Sensing Technologies
- Atomic and Molecular Physics
- Quantum Dots Synthesis And Properties
- Laser-Plasma Interactions and Diagnostics
- Laser Design and Applications
- CCD and CMOS Imaging Sensors
- Electronic and Structural Properties of Oxides
- Integrated Circuits and Semiconductor Failure Analysis
- Infrared Target Detection Methodologies
- Laser-Matter Interactions and Applications
- Semiconductor materials and devices
- Calibration and Measurement Techniques
- Semiconductor materials and interfaces
- Diamond and Carbon-based Materials Research
- Atmospheric Ozone and Climate
- Optical Systems and Laser Technology
- Ocular and Laser Science Research
- Optical and Acousto-Optic Technologies
- Fuel Cells and Related Materials
Chinese Academy of Sciences
2016-2025
Changchun Institute of Applied Chemistry
2025
State Key Laboratory of Electroanalytical Chemistry
2025
Shanghai Institute of Technical Physics
2016-2025
University of Science and Technology of China
2025
Changzhou Institute of Mechatronic Technology
2024
Shenyang Institute of Automation
2024
Shanghai Institute of Microsystem and Information Technology
2014-2023
State Key Laboratory of Transducer Technology
2018-2023
Wuxi Institute of Technology
2023
Abstract Single‐atom catalysts (SACs) with high metal loadings are highly desirable but still challenging for large scale synthesis. Here we report a new technique named as dry‐solid‐electrochemical synthesis (DSES) general large‐scale of SACs in an energy‐conservation and environment‐friendly way. With it, series pure carbon‐supported (Platinum up to 35.0 wt %, Iridium 21.2 Ruthenium 20.4 % Iron 17.6 %) were obtained. Particularly, Pt SAC 23.9 remarkable oxygen reduction reaction (ORR)...
Single‐atom catalysts (SACs) with high metal loadings are highly desirable but still challenging for large scale synthesis. Here we report a new technique named as dry‐solid‐electrochemical synthesis (DSES) general large‐scale of SACs in an energy‐conservation and environment‐friendly way. With it, series pure carbon‐supported (Platinum up to 35.0 wt%, Iridium 21.2 Ruthenium 20.4 wt% Iron 17.6 wt%) were obtained. Particularly, Pt SAC 23.9 remarkable oxygen reduction reaction (ORR)...
Abstract Topological superconductor islands are thought to be the building blocks of topological quantum bits. We produced single-crystalline VSi x with well-defined side facets and island size more than 200 nm using molecular beam epitaxy on Si substrate heated 950 ℃ throughout growth process. By means scanning tunneling spectroscopy, we revealed dynamical Coulomb blockade superconductivity isolated being connected by superconducting wetting layer respectively. Bi 2 Te 3 films were further...
Zinc diffusion behaviors in n type In0.83Ga0.17As epitaxial layers doped to 3.5 × 1015 cm−3 are investigated for the planar extended wavelength In0.83Al0.17As/In0.83Ga0.17As focal plane arrays by incorporating vacancy-related complex defect (VCD) model. The coefficients extracted from measured zinc concentration profiles at 480 °C determined be 3.1 10−12 and 4.3 10−11 cm2/s kick-out VCD models, respectively. Both mechanisms compete with each other during dynamic atom drive-in process....
Abstract In the photoreflectance of semiconductor heterostructure layers, modulated signals may arise from modulations both surface and interface electric potentials. It is necessary to distinguish effectively different origins in favor unraveling interfacial electronic properties. However, knowledge aspect remains a challenge for PR technique work revisits topic through experiments on lattice-matched single (SH) InGaAs/InP double (DH) InP/InGaAs/InP, which were grown by molecular beam...
InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for up to 1.4% and a partially relaxed structure higher contents. The bandgap was measured optical absorption, the reduction caused incorporation estimated be about 56 meV/Bi%. Strong broad photoluminescence signals were observed at room temperature samples with xBi <...
The influence of sensitization on the precipitation behaviour and environmentally assisted cracking (EAC) AA5083 alloy with –H128 temper have been investigated. 80 °C/500 h °C/1000 sensitized specimens exhibit discontinuous Mg-rich precipitates along grain boundaries, whereas almost continuous β′ phase is present boundaries in 175 °C/100 material. EAC susceptibility increases increasing exposure time elevated temperature. relationship between nitric acid mass loss test (NAMLT) values...
This work reports on the demonstration of a short-wave infrared detector nearly lattice matched to InP substrate using quaternary InGaAsBi as absorption layer. The bismuth content about 3.2% has red-shifted 50% cut-off wavelength from 1.6 μm 2.1 at room temperature, indicating bandgap reduction 180 meV due incorporation. shows an encouraging dark current density 2.4 × 10−4 A/cm2 bias voltage −10 mV 300 K. promising potential InP-based lattice-matched detectors for detection.
Effects of mesa etching and geometry on InGaAs/InAlAs avalanche photodiodes (APDs) were investigated by using both wet inductively coupled plasma (ICP) with different shapes as well etchants. It was found that the had no evident impact APDs' characteristics regardless techniques applied. Besides, ICP-etched APDs showed faster punch-through, suppressed premature surface breakdown lower dark current behaviors compared to wet-etched devices. Substantially leakage also observed for devices,...
An improved Fourier transform infrared spectroscopy approach adapting to photoluminescence and electroluminescence measurements in mid-infrared has been developed, which diode-pumped solid-state excitation lasers were adopted for excitation. In this approach, three different modes of rapid scan, double modulation, step scan software switchable without changing the hardware or connections. The advantages limitations each mode analyzed detail. Using a group III-V II-VI samples from...
In this work, we report on the above-room-temperature continuous-wave operation of InP-based antimony-free triangular quantum well (QW) lasers emitting up to approximately 2.4 µm. X-ray diffraction measurement confirms favorable structural quality highly strained QWs composed InAs/In0.53Ga0.47As digital alloy. The maximum working temperature reaches 340 K, and output power at 300 K is about 11 mW/facet an injection current 350 mA. internal efficiency 58% deduced extrapolated threshold...
We present tailoring of the performances thin multiplication layer InAlAs/InGaAs avalanche photodetectors (APDs) with operating voltages lower than 20 V. Their voltages, gain-voltage slopes and dark currents were successfully tailored by changing electric field distributions in region. The APDs show small activation energies current ranging from 0.12 to 0.19 eV at temperatures above 220 K, suggesting a band-trap-band tunneling dominant mechanism over this temperature range. very weak...
We report on InP-based metamorphic In0.83Ga0.17As photodetectors with dramatically suppressed dark currents by inserting a strain-compensated In0.66Ga0.34As/InAs superlattice electron barrier in the absorption layer. Compared reference detector without barrier, device showed that current is reduced about half at room temperature and more than two orders of magnitude 77 K low bias, while responsivity remained unchanged. The generation recombination tunneling are significantly suppressed,...
This work reports on InAs/In0.53Ga0.47As strain compensated quantum well structures InP-based metamorphic buffer to generate the type-I emission of beyond 3 μm. The is composed InxAl1−xAs graded layer and In0.8Ga0.2As virtual substrate layer. Atomic force microscope, transmission electron microscope x-ray diffraction measurements show moderate surface structural properties. A photoluminescence signal up 3.05 μm has been achieved at 300 K, which one longest wavelengths from interband...
A <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$15~\mu \text{m}$ </tex-math></inline-formula> pitch extended wavelength In <sub xmlns:xlink="http://www.w3.org/1999/xlink">0.83</sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">0.17</sub> As/ InP mega-pixel focal plane array (FPA) with a format of 1280 notation="LaTeX">$\times 1024$ and spectral response range 1150–2450 nm has been demonstrated for the...
GaAs-based In0.83Ga0.17As photodetectors (PDs) with cut-off wavelengths up to 2.6 µm are demonstrated. The effects of continuously-graded or fixed-composition InAlAs buffers on the device performances investigated. dark current characteristics PDs at various temperatures analysed in detail. photocurrents also measured 300 K; detectivity is extracted. two different buffer schemes show temperature-dependent behaviours. around room temperature not as good, but comparable those InP-based...
A systematic series of GaAsBi pin diodes was grown by MBE using different growth temperatures and Bi fluxes, to study the effect on structural opto-electronic properties GaAsBi. The contents show both temperature flux dependences. at higher evidence long range inhomogeneity from X-ray diffraction (XRD) measurements, whereas samples comparable content lower appear have well defined, uniform regions. However, high exhibit more intense photoluminescence (PL) dark currents. results suggest that...
In this article, unique spectral features of short-wave infrared band 1 μm–3 μm, and various applications related to the photodetectors focal plane arrays in band, are introduced briefly. addition, different material systems for devices outlined. Based on background, development lattice-matched wavelength-extended InGaAs arrays, including our continuous efforts field, reviewed. These concentrated sensing imaging, exclusive optical fiber communication.