A5045216846- Ion-surface interactions and analysis
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Memory and Neural Computing
- Nanowire Synthesis and Applications
- Diamond and Carbon-based Materials Research
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Metal and Thin Film Mechanics
- Electron and X-Ray Spectroscopy Techniques
- Photonic and Optical Devices
- Photonic Crystals and Applications
- Advanced Semiconductor Detectors and Materials
- Electronic and Structural Properties of Oxides
- Advanced Surface Polishing Techniques
- Quantum Dots Synthesis And Properties
- Graphene research and applications
- Nuclear Physics and Applications
- Fusion materials and technologies
- Nonlinear Optical Materials Studies
- ZnO doping and properties
Australian National University
2015-2024
Tianjin University
2017
University of Florida
2007-2013
IMDEA Materials
2013
University of South Florida
2008
Axcelis Technologies (United States)
2008
Lawrence Berkeley National Laboratory
2007
RMIT University
1981-2005
SunEdison (United States)
1996-2003
University of Newcastle Australia
1999
The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports optical control an oscillatory neuron based on volatile threshold switching in V
The stabilities of Pt/Ti bilayer metallizations in an oxidizing atmosphere have been investigated with several thicknesses interfacial Ti-bonding layers. Reactions the Pt/Ti/SiO2/Si interface were examined as a function various annealing conditions temperature range 200–800 °C by using Rutherford backscattering spectrometry, Auger electron spectroscopy, x-ray diffraction, and transmission microscopy. Thermal treatment oxygen was found to cause rapid oxidation Ti layer, accompanied migration...
We report production of nanostructured carbon foam by a high-repetition-rate, high-power laser ablation glassy in Ar atmosphere. A combination characterization techniques revealed that the system contains both sp2 and sp3 bonded atoms. The material is novel form which graphite-like sheets fill space at very low density due to strong hyperbolic curvature, as proposed for ?schwarzite?. exhibits ferromagnetic-like behaviour up 90 K, with narrow hysteresis curve high saturation magnetization....
Bombardment with 0.6-3-MeV ${\mathrm{Ne}}^{+}$ ions has been employed to stimulate solid-phase epitaxial growth of amorphous silicon at temperatures 200-500\ifmmode^\circ\else\textdegree\fi{}C. Two distinctly different regrowth regimes have identified. In the temperature range 200-400\ifmmode^\circ\else\textdegree\fi{}C activation energy for beaminduced is 0.24 eV, whereas, in above 400\ifmmode^\circ\else\textdegree\fi{}C, it higher (>0.5 eV), but less well defined because competing...
A phenomenological model of the solid-phase epitaxial growth process is proposed to account for influence substrate orientation and doping on kinetics. The combines structural features amorphous-crystalline interface with electronic processes related changes in Fermi level. basic premise that concentration kinklike sites at interface, hence velocity, can be influenced by a manner analogous enhancement dislocation velocities doping.
Nanostructured ion beam-modified Ge electrodes fabricated directly on Ni current collector substrates were found to exhibit excellent specific capacities during electrochemical cycling in half-cell configuration with Li metal for a wide range of rates. Structural characterization revealed that the nanostructured lose porosity but maintain electrical contact metallic substrate. These results suggest have great promise use as high performance battery anodes.
The threshold current for inducing the metal–insulator transition in a NbO2−x selector element is shown to be affected by properties of an adjacent memory when integrated into hybrid selector-memory device structure. Experimental results are reported homogeneous NbO2−x/Nb2O5−y and heterogeneous NbO2−x/HfO2 structures, show that lower both structures than alone, structure Finite modeling shows this primarily from confinement produced filamentary conduction path resistive-switching layer (i.e....
Electrical self-sustained oscillations have been observed in a broad range of two-terminal systems and are interest as possible building blocks for bio-inspired neuromorphic computing. In this work, we experimentally explore voltage-controlled NbOx devices with particular focus on understanding how the frequency waveform influenced by circuit parameters. We also introduce finite element model device based Joule-heating induced insulator-metal transition. The electroformed structure is...
Abstract Current‐controlled negative differential resistance has significant potential as a fundamental building block in brain‐inspired neuromorphic computing. However, achieving the desired characteristics, which is crucial for practical implementation, remains challenging due to lack of consensus on underlying mechanism and design criteria. Here, material‐independent model current‐controlled reported explain broad range including origin discontinuous snap‐back response observed many...
Hydrogen implantation and subsequent thermal annealing is found to result in a well-defined band of cavities Si. This an extremely efficient gettering layer for Cu which also introduced into the near surface Si by ion implantation. Profiling implanted indicates that ∼95% initial 3×1015 cm−2 implant redistributed following at temperature 780 °C from near-surface damaged narrow width ∼1000 Å depth ∼1 μm. Furthermore, between cavity essentially defect-free some contain bulk Cu3Si phase.
Hydrogen passivation of Si nanocrystals is shown to result in a redshift photoluminescence (PL) emission spectra, as well the more commonly observed intensity increase. The shift reversible, with spectra returning their unpassivated values hydrogen removed from samples by annealing. magnitude also depends on implant fluence employed for nanocrystal synthesis, increasing or particle size. These data are be consistent model which larger crystallites assumed contain greater number nonradiative...
The leakage current scaling issues for NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> selector devices are investigated. By introducing a rough Pt bottom electrode (BE) (RMS roughness ~2.5 nm) and inserting 20-nm-thick dielectric layer (Nb O xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> HfO ) between the BE layer, we show that threshold insulator-metal-transition in microscale (~150 μm) can be reduced to ~20 μA, close realized...
Electrical self-oscillation is reported for a Ti/NbOx negative differential resistance device incorporated in simple electric circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low 1.06 V, and demonstrate frequency control range from 2.5 to 20.5 MHz voltage changes small ∼1 V. Device &gt;6.5 × 1010 cycles, during which operating peak-to-peak current decreased by ∼25%. The voltage, large range, high endurance these devices makes them...
Locally-active memristor (LAM) is one of the promising candidates artificial neurons, indicating it has potential applications in neuromorphic computing. Quantitative theoretical analysis on LAMs can provide benefits for designing related oscillator circuits and systems. This study begins with aim assessing importance DC <i>V-I</i> characteristic performance by using small-signal method. The curve LAM specified two parameters involving resistance (conductance) differential (differential...
Silicon (100) crystals are implanted with 1-MeV ${\mathrm{Si}}^{2+}$ ions to a fixed fluence of 1\ifmmode\times\else\texttimes\fi{}${10}^{15}$ ions/${\mathrm{cm}}^{2}$ at systematically different incident-ion dose rates, R, and substrate temperatures, T. A critical dependence on T is found for ${\mathit{R}}_{\mathit{t}}$, the flux formation continuous amorphous layer in material. The activation energy characterizing process be 0.9\ifmmode\pm\else\textpm\fi{}0.05 eV, which attributed collapse...
High resolution channeling techniques have been used to investigate the maximum nonequilibrium solid solubility which can be achieved during low-temperature (⩽600 °C) epitaxial regrowth of high-dose antimony and indium implanted (100) silicon. The substitutional impurity concentration is observed increase with implant dose saturate at a limiting well above equilibrium for or in Observed correlations between measured limits, rates, intriguing redistribution effects suggest that size attendant...
The adhesion of thin films gold, sputter deposited onto silicon, is shown to be improved by subsequent irradiation with 5–30-keV electrons. similarities between electron and heavy ion effects suggest a common (electronic) origin for the change in interfacial bonding.