A5077338340- Advanced Memory and Neural Computing
- Transition Metal Oxide Nanomaterials
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Neural dynamics and brain function
- ZnO doping and properties
- Neuroscience and Neural Engineering
- Gas Sensing Nanomaterials and Sensors
- Photoreceptor and optogenetics research
- Semiconductor Quantum Structures and Devices
- Copper-based nanomaterials and applications
- CCD and CMOS Imaging Sensors
- Chalcogenide Semiconductor Thin Films
- Thermal properties of materials
- Aluminum Alloys Composites Properties
- Neural Networks and Reservoir Computing
- Quantum-Dot Cellular Automata
- Advanced Semiconductor Detectors and Materials
- Magnetic Properties and Applications
- Superconducting Materials and Applications
- Magnetic Properties and Synthesis of Ferrites
- Geophysical and Geoelectrical Methods
- Nanowire Synthesis and Applications
- Particle accelerators and beam dynamics
- Wind Turbine Control Systems
UNSW Sydney
2023-2025
The University of Western Australia
2021-2024
Australian National University
2019-2024
Centre de Nanosciences et de Nanotechnologies
2024
ARC Centre of Excellence for Transformative Meta-Optical Systems
2022-2023
Daffodil International University
2013-2014
Raja Ramanna Centre for Advanced Technology
2010-2011
Indian Institute of Technology Roorkee
2009-2010
Heriot-Watt University
1996
The application of hardware-based neural networks can be enhanced by integrating sensory neurons and synapses that enable direct input from external stimuli. This work reports optical control an oscillatory neuron based on volatile threshold switching in V
Abstract Current‐controlled negative differential resistance has significant potential as a fundamental building block in brain‐inspired neuromorphic computing. However, achieving the desired characteristics, which is crucial for practical implementation, remains challenging due to lack of consensus on underlying mechanism and design criteria. Here, material‐independent model current‐controlled reported explain broad range including origin discontinuous snap‐back response observed many...
Locally-active memristor (LAM) is one of the promising candidates artificial neurons, indicating it has potential applications in neuromorphic computing. Quantitative theoretical analysis on LAMs can provide benefits for designing related oscillator circuits and systems. This study begins with aim assessing importance DC <i>V-I</i> characteristic performance by using small-signal method. The curve LAM specified two parameters involving resistance (conductance) differential (differential...
Electroforming is used to initiate the memristive response in metal/oxide/metal devices by creating a filamentary conduction path oxide film. Here, we use simple photoresist-based detection technique map spatial distribution of conductive filaments formed Nb/NbOx/Pt devices, and correlate these with current-voltage characteristics situ thermoreflectance measurements identify distinct modes electroforming low- high-conductivity NbOx films. In low-conductivity films, are randomly distributed...
This paper presents a series of multi-stage hybrid memristor-CMOS ternary combinational logic stages that are optimized for reducing silicon area occupation. Prior demonstrations memristive typically constrained to single-stage due the variety challenges affect device performance. Noise accumulation across subsequent can be amortized by integrating gates, thus enabling higher density data transmission, where more complex computation take place within smaller number when compared single-bit...
Oxides that exhibit an insulator-metal transition can be used to fabricate energy-efficient relaxation oscillators for use in hardware-based neural networks but there are very few oxides with temperatures above room temperature. Here the structural, electrical, and thermal properties of V3 O5 thin films their application as functional oxide metal/oxide/metal reported. The devices show electroforming-free volatile threshold switching negative differential resistance (NDR) stable (<3%...
Temperature mapping by in situ thermoreflectance thermal imaging (TRTI) or midwave infrared spectroscopy has played an important role understanding the origins of threshold switching and effect insulator-metal transitions oxide-based memrsitive devices. In this study, we use scanning microscopy (SThM) as alternative technique that offers high spatial resolution (∼100 nm) is independent material. Specifically, SThM used to map temperature distribution NbOx-based cross-bar nanovia devices with...
Neuromorphic nanoelectronic devices that can emulate the temperature-sensitive dynamics of biological neurons are great interest for bioinspired robotics and advanced applications such as in silico neuroscience. In this work, we demonstrate biomimetic thermosensitive properties two-terminal V3O5 memristive showcase their similarity to firing characteristics neurons. The temperature-dependent electrical V3O5-based memristors used understand spiking response a simple relaxation oscillator....
Neuromorphic computing implemented with spiking neural networks (SNNs) based on volatile threshold switching is an energy‐efficient paradigm that may overcome future limitations of the von Neumann architecture. Herein, in oxyvanite (V 3 O 5 ) memristors and their application as a leaky integrate‐and‐fire (LIF) neuron are explored. The response individual neurons examined function circuit parameters, input pulse train, temperature reveals height‐dependent spike rate which devices exhibit...
Abstract A unique optoelectronic synaptic device has been developed, leveraging the negative photoconductance property of a single-crystal material system called Cs 2 CoCl 4 . This exhibits simultaneous volatile resistive switching response and sensitivity to optical stimuli, positioning as promising candidate for optically enhanced neuromorphic applications.
Abstract Devices with volatile memristive switching and self‐sustained relaxation oscillations have received significant attention for their use in neuromorphic computing solving optimization problems. However, obtaining devices stable response reliable oscillation remains challenging. This work describes the utility of metal/oxide interlayers achieving device performance tuneable characteristics using Nb‐Nb 2 O 5 ‐Pt structures. Detailed physical characterization Nb/Nb interlayer region...
Ultra-thin two-dimensional (2D) materials have gained significant attention for making next-generation optoelectronic devices. Here, we report a large-area heterojunction photodetector fabricated using liquid metal-printed 2D $\text{SnO}_2$ layer transferred onto CdTe thin films. The resulting device demonstrates efficient broadband light sensing from visible to near-infrared wavelengths, with enhanced detectivity and faster photo response than bare photodetectors. Significantly, the shows...
The potential shape memory alloy Ni50Mn34In16 is studied with partial substitution of Mn Fe and Cr to investigate the effect such on martensitic transition in Ni–Mn–In system. results ac susceptibility, magnetization electrical resistivity measurements show that while increases temperature, decreases it. Possible reasons for this shift are discussed. Evidence kinetic arrest austenite martensite phase substituted alloys also presented. Unlike parent which takes place presence high external...
Reactive metal electrodes (Nb, Ti, Cr, Ta, and Hf) are shown to play an important role in controlling the volatile switching characteristics of metal/Nb2O5/Pt devices. In particular, devices exhibit stable threshold under negative bias but have a response positive that depends on choice metal. Three distinct responses highlighted: Devices with Nb Ti top symmetric for both polarities; Cr asymmetric hysteresis windows Ta Hf integrated threshold-memory (1S1M) response. Based thermodynamic data...
Two terminal metal–oxide–metal devices based on niobium oxide thin films exhibit a wide range of non-linear electrical characteristics that have applications in hardware-based neuromorphic computing. In this study, we compare the threshold-switching and current-controlled negative differential resistance (NDR) cross-point fabricated from undoped Nb2O5 Ti-doped show doping offers an effective means engineering device response for particular applications. particular, is shown to improve...
A simple means of detecting and spatially mapping volatile nonvolatile conductive filaments in metal/oxide/metal cross-point devices is introduced, its application demonstrated. The technique based on thermal discolouration a thin photoresist layer deposited the top electrode (TE) device relies increase temperature produced by local Joule heating an underlying filament. Finite element modelling distribution dependencies shows that maximum at TE/photoresist interface particularly sensitive to...
The negative-differential-resistance (NDR) response of $\mathrm{Nb}$/${\mathrm{Nb}\mathrm{O}}_{x}$/$\mathrm{Pt}$ cross-point devices is shown to have a polarity dependence due the effect metal-oxide Schottky barriers on contact resistance. Three distinct responses are observed under opposite testing: bipolar S-type NDR, snapback and combined depending stoichiometry oxide film device area. In situ thermoreflectance imaging used show that these NDR associated with strong current localization,...
In-situ thermo-reflectance imaging is used to show that the discontinuous, snap-back mode of current-controlled negative differential resistance (CC-NDR) in NbOx-based devices a direct consequence current localization and redistribution. Current localisation shown result from creation conductive filament either during electroforming or bifurcation due super-linear temperature dependence film conductivity. The response then arises redistribution between regions low high current-density rapid...
With the development of human civilization, energy harvesting from different sustainable sources is getting more and importance. Among various renewable resources, wind one most popular forms energy. This source can be a good prospect to meet power crisis for developing country like Bangladesh. Since has random characteristic nature, it very important assess potential paper represents resource assessment five coastal areas in In order widely used statistical tool been chosen known as Weibull...
We report on the structural and optical properties of heteroepitaxial II–VI CdTe (211)B buffer layers with strained CdZnTe/CdTe superlattice layers, investigated by employing non-destructive methods including high-resolution x-ray diffraction, cathodoluminescence, photoluminescence spectroscopy. X-ray diffraction reciprocal space mapping measurements revealed that are coherently strained, leading to a spread in double-crystal rocking curve full-width at half-maximum values but better...
We develop a tri-state memristive system based on composable binarized memristors, from both dynamical systems construction to the development of in-house fabricated devices. Firstly, SPICE model binary memristor, series and parallel circuits memristors are designed, characteristics each circuit analyzed in detail. Secondly, through analysis connection direction parameters two an effective method construct memristor is proposed, verified using simulations. Finally, constructed equivalent...
This paper proposes a unique memristor-based design scheme for balanced ternary digital logic circuit. First, method of single-variable function circuit is proposed. Then, by combining with multiplexer, some common application-type combinational circuits are proposed, including half adder, multiplier and numerical comparator. The above all simulated verified in LTSpice, which demonstrate the feasibility proposed scheme.
Superconductivity in ultradoped Si 1− x Ge :B epilayers is demonstrated by nanosecond laser doping, which allows introducing substitutional B concentrations well above the solubility limit and up to 7 at%. A fraction ranging from 0 0.21 incorporated Si:B: 1) through a precursor gas, gas immersion doping; 2) ion implantation, followed annealing; 3) ultrahigh‐vacuum‐chemical vapor deposition growth of thin layer, annealing. The 30 75 nm‐thick display superconducting critical temperatures T c...