A5038812661- Advanced Optical Sensing Technologies
- Ocular and Laser Science Research
- Advanced Fluorescence Microscopy Techniques
- Transportation Planning and Optimization
- RNA modifications and cancer
- Genetics and Neurodevelopmental Disorders
- Traffic and Road Safety
- Traffic control and management
- Epigenetics and DNA Methylation
- Integrated Circuits and Semiconductor Failure Analysis
- CCD and CMOS Imaging Sensors
Anhui Medical University
2024
China Design Group (China)
2023
Nanjing University of Posts and Telecommunications
2018-2020
Timing jitter as a key performance of single-photon avalanche diode (SPAD) detectors plays significant role in determining the fast temporal response behavior SPAD device. Nevertheless, few analytic models are developed to directly calculate characteristic timing for its modeling difficulty. In this paper, we propose simple method, which can predict SPADs, without using time-consuming Monte Carlo simulation. Model investigation incorporates current, buildup time, and tail under different...
An improved behavioral model for simulating afterpulsing characteristic of single-photon avalanche diodes (SPADs) is introduced. The derived fully considers the generation and trapping mechanism carriers, its important parameters are from TCAD simulation instead empirical formula. developed SPAD implemented in Verilog-A description language has been successfully operated on Cadence Spectre simulator. can predict features phenomenon.
Timing jitter is an important indication reflecting on the performance of single photon avalanche diodes (SPADs). In this paper, analytical model established to predict temporal response characteristic SPADs based physical progress absorbing and triggering. The diffusion drift carriers in neutral layer are considered by solving continuity equation for exponential tail modeling. A Gaussian distribution used peak corresponding absorption region. key physic parameters such as electric field...
A new structure is proposed for single photon avalanche diodes (SPADs) to improve detection efficiency (PDE) in 180 nm CMOS process. This achieved with a diffraction window layer which manufactured the first intermetallic dielectric (IMD1) layer. The design features interlaced silicon nitride and oxide regions, aiming modify path distribution device. TCAD simulation computation results indicate maximum PDE gain of 22.5% at 825 wavelength general enhancement near-infrared short wavelengths....