A5024744708- Laser Material Processing Techniques
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Adsorption and biosorption for pollutant removal
- Photonic and Optical Devices
- Nanomaterials for catalytic reactions
- Nonlinear Optical Materials Studies
- Graphene research and applications
- Diamond and Carbon-based Materials Research
- Boron and Carbon Nanomaterials Research
- Wastewater Treatment and Nitrogen Removal
- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Environmental remediation with nanomaterials
- Gas Sensing Nanomaterials and Sensors
- Microbial Fuel Cells and Bioremediation
- Advanced Fiber Laser Technologies
- Semiconductor materials and devices
- Ga2O3 and related materials
- Analytical chemistry methods development
- Electrochemical sensors and biosensors
- GaN-based semiconductor devices and materials
- Advanced Optical Sensing Technologies
- Odor and Emission Control Technologies
- Transition Metal Oxide Nanomaterials
Jilin University
2015-2024
State Key Laboratory on Integrated Optoelectronics
2015-2024
Open University of China
2024
QuantumCTek (China)
2024
Henan Radio and Television University
2020-2023
Jilin Medical University
2009-2022
Jilin Agricultural University
2021
Henan University of Technology
2021
Shenzhen University
2006-2007
The introduction of intermediate band (IB) into the bandgap silicon (Si) is an efficient way to enhance light absorption Si in short-wave infrared region. In this article, we report inert element argon (Ar)-hyperdoped ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$</tex-math> </inline-formula> 10 notation="LaTeX">$^{\text{21}}$</tex-math> cm notation="LaTeX">$^{-\text{3}}\text{)}$</tex-math>...
External electric fields can be used to manipulate the electronic properties of two-dimensional (2D) materials. 2D InSe semiconductors possess high electron mobility and wide band gap tunability. Therefore, they have been proposed for use in ultrathin devices. Here, using first-principles calculations, we study charge polarization, structure, gas adsorption an monolayer under vertical fields. We find that both structural evolution polarization rely on directions The hole effective mass at...
ABSTRACT A potential biochar (KLS F ‐BC) was prepared by pyrolysis of loofah sponge (LS) at 600°C using KOH as an activator to adsorb oxytetracycline hydrochloride (OTCH). The response surface method (RSM) applied obtain the best preparation parameters (the first temperature 573°C and time 138 min, LS ‐BC/KOH, 1:3, m/m) adsorption conditions (OTCH concentration: 100 mg L −1 , adsorbent dosage: 0.84 g time: 28 initial solution pH: 5.1), under which capacity KLS ‐BC for OTCH 662.96 . data on...
Molybdenum (Mo)-doped black silicon (Si) is obtained by using femtosecond laser irradiation. The concentration of Mo atoms at the depth from 10 to 200 nm has exceeded <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mn>10</mml:mn> </mml:mrow> <mml:mn>19</mml:mn> </mml:msup> <mml:mspace width="thickmathspace"/> <mml:mi mathvariant="normal">c</mml:mi> mathvariant="normal">m</mml:mi> <mml:mo>−</mml:mo>...
In this study, a porous carbonaceous adsorbent was prepared from sycamore flocs by pyrolysis method and K2CO3 activation. The effects of preparative conditions the material on its adsorptive property were explored. optimal (SFB2-900) obtained with K2CO3/biochar mass ratio 2:1 at an activation temperature 900 °C, possessing huge surface specific area (1651.27 m2/g). largest adsorption capacity for ciprofloxacin SFB2-900 up to 430.25 mg/g. behavior well described pseudo-second-order kinetic...
Chalcogen-doped microstructural silicon irradiated by femtosecond laser has high near-uniform absorption on a broad spectrum, but the factors leading to infrared are complex and remain an open problem. To clarify origin of besides hyperdoped Chalcogen atoms, is fabricated under vacuum condition. The relationship between as-formed new phases (amorphous silicon: α-Si nanocrystal silicon) established. It indicates that caused defects related Urbach states from or Si, these metastable...
Micro-ripple and micro-bead structures are formed on a silicon (Si) surface after irradiation with femtosecond laser pulses in nitrogen (N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) atmosphere. Simultaneously, supersaturated (N) atoms, concentration above 10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">20</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> , doped into the textured black Si layer via ablation. The...
Gold (Au)-doped-textured silicon (Si) material with a thermostable absorption below bandgap (>50%) is obtained by femtosecond laser irradiation. Although the concentration of Au impurity (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) in textured Si at least four orders magnitude greater than solid solubility crystalline Si, sheet carrier density (approximately 10...
As the main component of silicon (Si)-based Optic Electronics Integrated Circuit (OEIC) chip, Si-based infrared photodetector operating at communication wavebands is very important. In this paper, we report a kind chromium (Cr)-hyperdoped black Si material fabricated using femtosecond laser pulses irradiation. The concentration Cr atoms in layer exceeds 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">20</sup> cm...
Annealing-insensitive black silicon with high absorption below the bandgap has been achieved by femtosecond laser direct writing. Spike microstructures sizes ranging from 4 to 25 μm are formed on surface layer of substrate, and a large amount phosphorous impurities (10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sup> cm xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) is doped during resolidification process. The infrared...
We report an approach for remote and rapid fabrication of a broadband low-reflectivity black silicon surface by ablating crystalline with femtosecond laser filaments in air. Porous microstructures on the processed are formed, resulting significantly enhanced light trapping efficiency (UV-IR) spectral range. It is found that air filament can reduce average number adopted pulses normalized area enables processing remotely, which opens way toward micromachining optoelectronic materials filaments.
A crystalline silicon (Si) surface was modified using nanosecond laser pulses in an argon atmosphere. The laser-modified Si (M-Si) samples have a higher performance and thermostable absorption the broadband range (400-2400 nm) than conventional Si. concentration of carrier electrons M-Si layer is at least five orders magnitude greater substrate. Using N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -N...
Flexible ultraviolet (UV) photodetectors (PDs) have gained increasing demand because of their widespread applications in wearable devices. However, difficulties associated with complicated fabrication technologies significantly limit scope application. Herein, via the development a femtosecond laser direct writing (FsLDW) strategy, silicon carbide (SiC) nanoparticles are found to be assembled single microwire within 30 s. The surface deposited SiC presents three-dimensional porous structure,...
The traditional von Neumann architecture of computers, constrained by the inherent separation processing and memory units, faces challenges, for instance, wall issue. Neuromorphic computing in-memory offer promising paradigms to overcome limitations additional data movement enhance computational efficiency. In this work, transfer-free flexible memristors based on hexagonal boron nitride films were proposed analog neuromorphic digital memcomputing. Analog prepared; they exhibited synaptic...
Non-doped black silicon (b-Si) is fabricated on the surface layer of a near-intrinsic Si substrate by nanosecond (ns) laser direct writing in an argon (Ar) atmosphere. The non-doped samples exhibit near-unity sub-bandgap (1100∼2500 nm) absorptance more than 50%. Amazingly, resistivity ns irradiated b-Si about five orders magnitude lower that unprocessed substrate. carrier density 1×1018 cm-3, according to Hall effect measurement. Temperature-dependent measurements show exhibits energy level...