Abstract Perovskite light‐emitting diodes (PeLEDs) are promising candidates for display and solid‐state lighting, due to their tunable colors, high conversion efficiencies, low cost. However, the performance of blue PeLEDs is far inferior that near‐infrared, red, green counterparts. Here, fabrication pure‐blue with an emission peak at 475 nm, a external quantum efficiency 10.1%, maximum luminance 14 000 cd m −2 demonstrated by tailoring compositions perovskites. The electroluminescence...

Two-terminal electrical bistable devices have been fabricated using a sandwich structure of organic/metal/organic as the active medium, sandwiched between two external electrodes. The nonvolatile bistability these can be controlled positive and negative bias alternatively. A forward may switch device to high-conductance state, while reverse is required restore it low-conductance state. In this letter, model explain proposed. It found that very sensitive nanostructure middle metal layer. For...

For rechargeable lithium–metal batteries (RLBs), gel polymer electrolytes (GPEs) are a very competitive and pragmatic option because the special composite structure could restrain uncontrolled lithium dendrite in liquid electrolyte avoid poor interface contact for solid-state electrolyte. However, difficulty lies finding delicate balance between ion transport stability. Herein, heterostructured GPE, which metal–organic framework layer an ultrathin Al2O3 deposition coated on same side of...

Copper (Cu) migration into semiconductor materials like silicon is a well-known and troublesome phenomenon often causing adverse effect on devices. Generally diffusion barrier layer added to prevent Cu metallization. We demonstrate an organic nonvolatile memory device by controlling the Cu-ion (Cu+) concentration within layer. When Cu+ high enough, exhibits conductive state due metallization effect. low, displays low conductance state. These two states differ in their electrical conductivity...

The introduction of intermediate band (IB) into the bandgap silicon (Si) is an efficient way to enhance light absorption Si in short-wave infrared region. In this article, we report inert element argon (Ar)-hyperdoped ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim$</tex-math> </inline-formula> 10 notation="LaTeX">$^{\text{21}}$</tex-math> cm notation="LaTeX">$^{-\text{3}}\text{)}$</tex-math>...

Properties of femtosecond laser-induced ripples on patterned metal surfaces are investigated through using a crossed two-step line-scribing method. It is found that the ripple periodicity tends to decrease with larger surface roughness but increase higher laser fluence. For increased roughness, change in becomes more sensitive incident A cut-off prevents from altering also revealed lower These phenomena discussed view plasmon polaritons plasma and modified dielectric constant roughened surfaces.

Intense 1.53 μm electroluminescence (EL) is achieved from metal-oxide-semiconductor light-emitting devices based on Er-doped Ga2O3 (Ga2O3:Er) nanofilms fabricated by atomic layer deposition. Due to the wide bandgap and outstanding tolerance electric field electron injection of amorphous matrix, these silicon-based present a low turn-on voltage ∼15 V, while maximum current can reach 5 A/cm2. The optical power density EL emissions improved 23.73 mW/cm2, with external quantum efficiency 36.5%...

Dielectric ceramics with low <em>ε_r</em>, high <em>Q</em>×<em>f</em>, and near-zero <em>τ_f</em> in the microwave bands are key materials used fifth/sixth-generation (5G/6G) telecommunication, while of most low-<em>ε_r</em> dielectric is relatively negative. In this work, first Ga-based ceramic SrGa₁₂O₁₉ anomalous positive was reported, cause <em>τ_f</em>, intrinsic polarization loss mechanism were systematically studied....

For silicon-based devices using dielectric oxides doped with rare earth ions, their electroluminescence (EL) performance relies on the sufficient carrier injection. In this work, atomic Ga2O3 layers are inserted within Er-doped GeO2 nanofilms fabricated by layer deposition (ALD). Both Ga(CH3)3 and Ga(C2H5)3 could realize ALD growth of onto as-deposited nanofilm unaffected rates. The interfacial defects introduced decrease threshold voltage while increasing tolerable injection current EL...

The development of efficient electrocatalysts for CO2 reduction to CO is challenging due competing hydrogen evolution and intermediate over‐stabilization. In this study, a Cu‐Co dual single‐atom catalyst (CuCo‐DSAC) anchored on carbon black was synthesized via scalable pyrolysis. achieves 98.5% Faradaic efficiency at 500 mA cm⁻2, maintaining &gt;95% selectivity across 400 mV window with &lt;6% decay over 48 hours, which superior the corresponding control samples. situ spectroscopy DFT...

The development of efficient electrocatalysts for CO2 reduction to CO is challenging due competing hydrogen evolution and intermediate over‐stabilization. In this study, a Cu‐Co dual single‐atom catalyst (CuCo‐DSAC) anchored on carbon black was synthesized via scalable pyrolysis. achieves 98.5% Faradaic efficiency at 500 mA cm⁻2, maintaining &gt;95% selectivity across 400 mV window with &lt;6% decay over 48 hours, which superior the corresponding control samples. situ spectroscopy DFT...

Silicon nanoparticles ranging from 2 to 16 nm were synthesized by a facile wet chemical route, in which SiO amorphous powder was annealed at 1000 °C, etched hydrofluoric acid, and surface modified alkene. After alkyl-termination of the particle surfaces, size selective precipitation technique applied separate into uniform sized fractions. Transmission electron microscopy showed well-dispersed highly crystalline silicon after treatment Visible room-temperature photoluminescence range 800−500...

It is well known that the light emission at ∼1.54 μm falls within minimum loss window of silica optic fibers for optical communication and significance silicon-based optoelectronic integration. Herein, we report on erbium (Er)-related electroluminescence (EL) from Er-doped ZnO (ZnO:Er)/p+-Si heterostructured light-emitting devices. Such Er-related EL can be enabled a voltage as low 6 V. derived triggered by transfer energy released defect-assisted indirect recombination in host to...

Molybdenum (Mo)-doped black silicon (Si) is obtained by using femtosecond laser irradiation. The concentration of Mo atoms at the depth from 10 to 200 nm has exceeded <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mn>10</mml:mn> </mml:mrow> <mml:mn>19</mml:mn> </mml:msup> <mml:mspace width="thickmathspace"/> <mml:mi mathvariant="normal">c</mml:mi> mathvariant="normal">m</mml:mi> <mml:mo>−</mml:mo>...

Arrays of parallel connected coaxial multiwall-carbon-nanotube–amorphous-silicon solar cells are fabricated. In this configuration, orthogonalization the directions light absorption and charge-carrier collection is realized. Under simulated illumination (AM 1.5 G), short-circuit current our carbon-nanotube enhanced cell ∼25% higher than that planar cell.

We explored for the first time ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium was successfully doped layer-by-layer two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that decreases progressively as doping concentration increases. A global-fitting procedure suggests appearance components: fast one is directly associated to...

Two garnet-type electronic functional ceramics, Y2CaBGa4O12 (B = Zr, Sn), are reported, including their preparation process, microwave dielectric properties, and bonding properties. Acceptable properties of εr 12.1 ± 0.1, Q × f 85,900 2000 GHz, τf −45.5 1.5 ppm/°C for Y2CaZrGa4O12 10.6 95,750 −53.1 1.8 Y2CaSnGa4O12 were achieved at 1450 °C. Compared with the ideal bond lengths, Ca–O, Zr–O, Sn–O bonds compressed, whereas Y–O, Ga(1)–O, Ga(2)–O in an expanded state. The positive weighted...

A high-performance organic diode is demonstrated by using C60 sandwiched between a cathode and an anode metals with different diffusivity donor ability. In this letter, copper (Cu) aluminum (Al) are selected as the anode, respectively. used electron-acceptor for its high stability carrier mobility. The as-prepared shows poor performance. However, after heat treatment, Cu/C60 interface becomes Ohmic contact through Cu diffusion charge-transfer processes, allowing highly efficient electron...