The flowerlike ZnO nanostructures, which consisted of swordlike nanorods, have been prepared by a cetyltrimethylammonium bromide (CTAB)-assisted hydrothermal process at low temperature (120 °C). XRD pattern indicated that the nanostructures were hexagonal. Furthermore, SAED and HRTEM revealed nanorods single crystal in nature preferentially grew up along [001]. Finally, mechanism for CTAB-assisted synthesis has preliminarily explained polar growth theory surfactant action theory.

Different shapes of ZnO microcrystals have been achieved controllably by a capping-molecule-assisted hydrothermal process. The flowerlike, disklike, and dumbbell-like hexagonal phase obtained respectively using ammonia, citric acid (CA), poly(vinyl alcohol) (PVA) as the capping molecules. Only very strong UV emission at ∼380 nm is observed in photoluminescence (PL) spectra three kinds microcrystals, indicative their high crystal quality. formation mechanisms for hydrothermally synthesized...

Flower-like ZnO nanostructures, which consisted of sword-like nanorods, have been prepared by an organic-free hydrothermal process. The XRD pattern indicated that the flower-like nanostructures were hexagonal. SAED and HRTEM experiments implied nanorods single crystal in nature preferentially grew up along [001] direction. effects temperature, pH value mineralizer on morphology also investigated. It is considered main factor to influence because its effect initial nuclei growth environment...

Single-crystalline ceria nanorods have been fabricated by self-assembly of nanocrystals via a simple, low-temperature, and ligand-free approach. Detailed high-resolution transmission electron microscopy shows that the are formed along [211] or [110] direction self-organization truncated octahedral nanocrystals, sharing {111} {200} planes with each other, whereas previous report only exists in nanorods. The nucleation temperature molar ratio Ce3+ OH- also play key roles formation Moreover,...

The electrically pumped ultraviolet (UV) random lasing in c-axis oriented ZnO polycrystalline films has been demonstrated. For this demonstration, a metal-oxide-semiconductor structure of Au∕SiOx(x<2)∕ZnO film was fabricated on silicon substrate. With ever-higher forward bias where the negative voltage connected to substrate, UV electroluminescence from such ZnO-based device transformed spontaneous emission film. It is believed that recurrent scattering and interference enough strong...

Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p−) and heavily (p+) silicon substrates. The sputtered identified to be highly ⟨002⟩ oriented in crystallinity n type electrical conductivity. current-voltage (I-V) characteristics revealed that ZnO∕p−-Si heterojunction exhibited well-defined rectifying behavior while ZnO∕p+-Si did not possess function. As for heterojunction, it was electroluminescent a certain extent visible region under sufficient...

We have developed a simple approach for the large-scale synthesis of cobalt nitrate carbonate hydroxide hydrate (Co(CO(3))(0.35)(NO(3))(0.2)(OH)(1.1)·1.74H(2)O) nanowires via hydrothermal process using sodium and formaldehyde as mineralizers at 120 °C. The porous Co(3)O(4) nanorods 10-30 nm in diameter hundreds nanometres length been fabricated from above-mentioned multicomponent by calcination 400 morphology structure characterized transmission electron microscopy (TEM), field emission...

A sol–gel process and a nanochannel aluminium template were employed to fabricate an orderly array of ZnO nanowires. The nanowires, with hexagonal structure, identified by means x-ray diffraction selected-area electron diffraction. arrays nanowires characterized scanning microscopy. Transmission microscopy (TEM) shows that the diameters are very uniform, at about 60 nm. Furthermore, high-resolution TEM provides lattice images {100}, {002} {101} planes in indicating well crystallized.

Airplane-like FeO(OH) nanostructures have been first synthesized by an ethylene glycol (EG) assisted hydrothermal process and sequential annealing at 600 °C for 1 h. The as-prepared products were investigated X-ray diffraction (XRD), UV−vis spectroscopy (UV), Raman spectroscopy, transmission electron microscopy (TEM), field emission scanning (FESEM). It is revealed that the single crystalline orthorhombic prepared EG-assisted with airplane-like morphology can be easily transformed to...

In this communication, we demonstrate a new approach to well-controlled growth of Se nanowires and nanotubes, which comprises hydrothermal process following sonication. The was used derive particles trigonal phase. the subsequent sonication, if were large enough, they first broken, then aggregated along circumferential edge gap thus forming nanotubes; conversely, not broken aligned into nanowires. high-resolution transmission electron microscopy (HRTEM) proved that both nanotubes single...

Fairly pure ultraviolet (UV) electroluminescence (EL) was realized on a ZnO-based metal-insulator (SiOx,x⩽2)-semiconductor structure silicon substrate, which easily fabricated by the reactive direct current sputtering and electron beam evaporation. The UV EL originated from near-band-edge (NBE) emission of ZnO achieved at room temperature when device under sufficient forward bias with negative voltage applied substrate. Moreover, intermediate SiOx layer should be thick enough to confine...

We report the electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si. Metal-insulator-semiconductor structures in a form of Au/SiO(2)/ZnO-nanorod-array were fabricated Such devices exhibit when Au electrode is applied with sufficiently high positive voltage. In this context, region adjacent to SiO(2)/ZnO-nanorod-array interface, stimulated emission occurs due population inversion and, moreover, light scattered by nanorods and SiO(2) films. Therefore, proceeds optical...

Light-emitting devices based on MgxZn1-xO/ZnO:RE/Si heterostructures are proposed. Hot holes formed in MgxZn1-xO layers enter into ZnO:RE to impact-excite the RE3+ ions therein. From using (Eu, Er and Tm) films, electroluminescence red, green, blue, also optical-communication wavelengths achieved. Such RE-related can be activated by extraordinarily low voltages of only several volts. As a service our authors readers, this journal provides supporting information supplied authors. materials...

We report on the suppressed randomness in electrically pumped random lasing (RL) from a light-emitting device (LED) based metal–insulator–semiconductor (MIS) structure of Au/SiOx (x < 2)/ZnO silicon substrate, by means patterning ZnO polycrystalline film into number square blocks separated streets that are filled with SiOx insulator. It is found RL modes can be remarkably reduced shrinking absence interblock optical coupling. Meanwhile, imposition coupling streets, further reduced, and more...

We report on the significant suppression of randomness electrically pumped random lasing (RL) from ZnO-based metal-insulator-semiconductor (MIS) structured light-emitting devices (LEDs), by means adopting appropriately patterned hydrothermal ZnO films featuring large crystal grains as layer. The silicon substrates, with sized over 500 nm, were firstly into a number square blocks separated streets using laser direct writing photolithography. Based such films, MIS...

The outermost surface of wool is covered by a scale layer, posing challenges to some steps fabric processing. This primarily composed keratin, resists degradation conventional proteases due its high disulfide bond content. Protease K, an extracellular serine endo-proteinase derived from Tritirachium album Limber (tPRK), known for ability digest native keratin. However, limited activity against keratin has restricted application in layer treatment. In this study, the substrate-binding pocket...

Grown-in defects including oxygen precipitates and voids in nitrogen-doped Czochralski (NCZ) silicon have been investigated. It was found that the formation of grown-in NCZ can be divided into two stages. The large supposed to enhanced by N2–V2–Ox complexes are generated around 1150 °C, while small NmOn formed at 750 °C below. Moreover, it revealed precipitation behavior mixed-type silicon, which contains vacancy-type interstitial-type distinguished an OSF-ring oxidized wafer, is sharp...

A novel seed-assisted chemical reaction at 95 degrees C has been employed to synthesize uniform, straight, thin, and single-crystalline ZnO nanorods on a hectogram scale. The molar ratio of seed zinc source plays critical role in the preparation thin nanorods. At low source, javelin-like consisting with diameter 100 nm thick 200 have obtained. In contrast, straight about 20 prepared. Dispersants such as poly(vinyl alcohol) act spatial obstructors control length morphology, structure, optical...

It is well known that the light emission at ∼1.54 μm falls within minimum loss window of silica optic fibers for optical communication and significance silicon-based optoelectronic integration. Herein, we report on erbium (Er)-related electroluminescence (EL) from Er-doped ZnO (ZnO:Er)/p+-Si heterostructured light-emitting devices. Such Er-related EL can be enabled a voltage as low 6 V. derived triggered by transfer energy released defect-assisted indirect recombination in host to...