A5079740044- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Optic Sensors
- Advanced Fluorescence Microscopy Techniques
- Mechanical and Optical Resonators
- Solid State Laser Technologies
- graph theory and CDMA systems
- Photonic Crystals and Applications
- Laser Design and Applications
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Optical Sensing Technologies
- Photoreceptor and optogenetics research
- Laser-Matter Interactions and Applications
- Surface Roughness and Optical Measurements
- Electronic Packaging and Soldering Technologies
- Ocular and Laser Science Research
- Near-Field Optical Microscopy
- Laser Material Processing Techniques
- Random lasers and scattering media
- Plasmonic and Surface Plasmon Research
- Optical Wireless Communication Technologies
- Corrosion Behavior and Inhibition
LioniX (Netherlands)
2010-2024
Shenandoah University
2024
National Technical University of Athens
2010-2021
XiO Photonics (Netherlands)
2008-2017
Eindhoven University of Technology
2007-2009
University of Twente
2002-2008
Institute of Nanotechnology
2008
Ghent University
2007
Politecnico di Milano
2007
TU Wien
2005
An overview of the most recent developments and improvements to low-loss TriPleX Si 3 N 4 waveguide technology is presented in this paper.The platform provides a suite geometries (box, double stripe, symmetric single asymmetric stripe) that can be combined design complex functional circuits, but more important are manufactured monolithic process flow create compact photonic integrated circuit.All functionalities circuit constructed using standard basic building blocks, namely straight bent...
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well compatibility for embedding into photonic circuits are of high importance a wide range applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up 120 nm coverage around 1.55 um wavelength, and output power above 100 mW. show...
Coherent optomechanical interaction known as stimulated Brillouin scattering (SBS) can enable ultrahigh resolution signal processing and narrow-linewidth lasers. SBS has recently been studied extensively in integrated waveguides; however, many implementations rely on complicated fabrication schemes. The absence of standard mature platforms prevents its large-scale circuit integration. Notably, the emerging silicon nitride (Si3N4) photonic integration platform is currently out reach because...
Microwave photonics (MWP) has adopted a number of important concepts and technologies over the recent pasts, including photonic integration, versatile programmability, techniques for enhancing key radio frequency performance metrics such as noise figure dynamic range. However, to date, these aspects have not been achieved simultaneously in single circuit. Here, we demonstrate, first time, multi-functional integrated microwave circuit that enables on-chip programmable filtering functions...
We report a reconfigurable four-channel optical add-drop multiplexer for use in access networks. The (OADM) is based on vertically coupled thermally tunable Si/sub 3/N/sub 4/--SiO/sub 2/ microring resonators (MRs) and has been realized footprint of 0.25 mm/sup 2/. Individual MRs the OADM can be tuned across full free-spectral range 4.18 nm have 3-dB bandwidth 50 GHz.
Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, extension also decreases free-spectral range cavity. This reduces wavelength continuous tuning that can be achieved a given phase shift an intracavity element. We present method increases to short equivalent cavity, while maintaining linewidth long Using single-frequency hybrid integrated InP-Si3N4 120 nm coverage around...
We demonstrate a broadband and continuously tunable 1×4 optical beamforming network (OBFN), based on the hybrid integration of indium phosphide (InP) components in silicon nitride (Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ) platform. The photonic integrated circuit (PIC) comprises InP-Si external cavity laser, pair InP phase modulators, Si single-sideband full carrier (SSBFC)...
We report on the spectral properties of a diode laser with tunable external cavity mirror, realized as an integrated optics waveguide circuit.Even though is short compared to that other narrow bandwidth lasers, this small 25 kHz (FWHM).The side-mode suppression ratio (SMSR) 50 dB.The able access preset wavelengths in 200 µs and can be tuned over full telecommunications C-band (1530-1565 nm).
We present a new class of low-loss integrated optical waveguide structures as CMOS-compatible industrial standard for photonic integration on silicon or glass. A TriPleXTM is basically formed by -preferably rectangular- nitride (Si<sub>3</sub>N<sub>4</sub>) shell filled with and encapsulated dioxide (SiO<sub>2</sub>). The constituent materials are low-cost stoichiometric LPVCD end products which very stable in time. Modal characteristics, birefringence, footprint size insertion loss...
In this article a selection of highlights the TriPleX™ technology LioniX is given. The basic waveguide explained with recent benchmark measurements done by University California Santa Barbara (UCSB) and Twente (UT-TE). order to show low loss transparency over wide wavelength range three examples applications in different regimes are described more detail. These Integrated Laser Beam Combiner (ILBC) XiO Photonics visible light, ringresonator sensing platform around 850 nm phased array antenna...
We report on a novel type of laser in which semiconductor optical amplifier (SOA) receives frequency-selective feedback from glass-waveguide circuit. The we present here is based InP for operation the 1.55 μm wavelength range. Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> glass waveguide circuit comprises two sequential high-Q ring resonators. Adiabatic tapering used maximizing feedback. shows single-frequency oscillation with record-narrow spectral linewidth 24 kHz at an output power 5.7...
We implement a multi-color laser engine with silicon nitride photonic integrated circuit technology, that combines four fluorophore excitation wavelengths (405 nm, 488 561 640 nm) and splits them variable attenuation among two output fibers used for different microscope imaging modalities. With the help of volume engine’s optics is reduced by orders magnitude compared to its commercially available discrete counterpart. Light multiplexing implemented means directional coupler based device...
This paper presents the design, fabrication, and characterization of first photonic-assisted receiver module for a Scan-on-Receive synthetic aperture radar (SCORE-SAR) intended Earth observation from space. The is hybrid photonic integrated circuit (PIC) that designed to do precise continuous beamforming-on-receive wideband signals 12 antenna elements array, synthesizing up three simultaneous beams. PIC also implements frequency-agnostic down-conversion so synthesized beams can be directly...
Two reconfigurable optical add-drop multiplexers, operating in the second or third telecom window, as well a 1x4x4 lambda-router are demonstrated. The devices have footprint less than 2 mm(2) and based on thermally tunable vertically coupled microring resonators fabricated Si(3)N(4)/SiO(2).
The intensification of traffic in the access network requires development novel architectural solutions for a reconfigurable topology and components based on optical technologies. We present hybrid ring-shaped wavelength division multiplexing (WDM)–time (TDM) passive (PON) that is capable providing bandwidth demand at high bit rates transparent dynamic manner. Our cost-efficient scalable architecture integratable such as wavelength-agile networking unit microring-resonator-based remote node....
We present an integrated hybrid semiconductor-dielectric (InP-Si3N4) waveguide laser that generates frequency combs at a wavelength around 1.5 μm with record-low intrinsic optical linewidth of 34 kHz. This is achieved by extending the cavity photon lifetime using low-loss dielectric circuit. In our experimental demonstration, on-chip, effective path length extended to 6 cm. The resulting narrowing shows high potential highly coherent direct electrical pumping, based on and heterogeneous...
A compact [200×200 μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ] wavelength-selective switch based on thermally tunable SiO <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> --Si xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> microring resonators has been designed and realized. The supports gigabit filtering applications in access networks. Spectral measurements show...
A laterally coupled microring resonator was fabricated by direct photodefinition of negative photoresist SU8, containing tricyanovinylidenediphenylaminobenzene chromophore, exploiting the low ultraviolet absorption window this chromophore. The ring first photodefined slight cross-linking. Thereafter, poling (to align chromophores) and further cross-linking increase glass transition temperature) were simultaneously carried out. material showed excellent photostability electro-optic modulation...
In this work, we demonstrate the first stress-optic modulator in a silicon nitride-based waveguide platform (TriPleX) telecommunication C-band. our phase refractive index of waveguiding materials is controlled by effect induced actuating 2 μm thick PZT layer on top TriPleX geometry. The efficiency optimized by, amongst others, focusing applied stress core region through local increase cladding. Using Mach-Zehnder interferometer, measured half-wave voltage, V<sub>π</sub>, at 34 V...
Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over wide range by tuning the composition. In this contribution we will summarize key of class and discuss several application examples. Preliminary results on novel processes, which lead to largely reduced hydrogen incorporation enable reflow SiON material, are being presented.