Silicon nitride is demonstrated as a high performance and cost-effective solution for dense integrated photonic circuits in the visible spectrum. Experimental results nanophotonic waveguides fabricated standard CMOS pilot line with losses below 0.71dB/cm an aqueous environment 0.51dB/cm silicon dioxide cladding are reported. Design characterization of waveguide bends, grating couplers multimode interference (MMI) at wavelength 660 nm presented. The index contrast this technology enables...

We demonstrate for the first time a fully integrated electro-optic modulator based on locally strained silicon rib-waveguides. By depositing Si3N4 strain layer directly top of waveguide crystal is asymmetrically distorted. Thus its inversion symmetry broken and linear effect induced. Electro-optic characterization yields record high value χ(2)(yyz) = 122 pm/V second-order susceptibility strict dependence between applied modulation voltage V(mod) resulting effective index change Δn(eff)....

Three-dimensional (3D) nano-printing of freeform optical waveguides, also referred to as photonic wire bonding, allows for efficient coupling between chips and can greatly simplify system assembly. As a key advantage, the shape trajectory bonds be adapted mode-field profiles positions chips, thereby offering an attractive alternative conventional assembly techniques that rely on technically complex costly high-precision alignment. However, while fundamental advantages bonding concept have...

Ring resonator modulators (RRM) combine extreme compactness, low power consumption and wavelength division multiplexing functionality, making them a frontrunner for addressing the scalability requirements of short distance optical links. To extend data rates beyond classically assumed bandwidth capability, we derive experimentally verify closed form equations electro-optic response asymmetric side band generation resulting from inherent transient time dynamics leverage these to significantly...

We report on the design of Silicon Mach-Zehnder carrier depletion modulators relying epitaxially grown vertical junction diodes. Unprecedented spatial control over doping profiles resulting from combining local ion implantation with epitaxial overgrowth enables highly linear phase shifters high modulation efficiency and comparatively low insertion losses. A average shifter VπL = 0.74 V⋅cm is reached between 0 V 2 reverse bias, while maintaining optical losses at 4.2 dB/mm intrinsic RC cutoff...

Switching dynamics associated with reset and set operations of vertical phase change random access memory (PCRAM) cells are studied using a three-dimensional simulation model. Based on finite difference method, the numerical algorithm simulates electrical, thermal, in PCRAM device during switching taking into account electrical thermal percolation characteristics material. Toward better understanding optimization cell designs, obtained results provide unprecedented insight temporally...

Percolation effects are studied in phase change materials used for optical and electrical nonvolatile memory applications. Simultaneous measurements of the resistivity reflectivity allow experimental assessment percolation behavior associated with mixed amorphous crystalline phases this class chalcogenide materials. Dynamic analysis isothermal to transition as-deposited Ge2Sb2Te5 Sn doped thin films performed. A significantly earlier onset saturation comparison optically measured is...

High-performance silicon nitride focusing grating couplers with AlCu/TiN reflectors for a visible wavelength (660 nm) have been designed and fabricated in standard complementary metal-oxide-semiconductor pilot line. The influence of the bottom oxide cladding thickness on decay length efficiency is theoretically experimentally investigated. It shown how metal reflector not only increases but also allows reduction radiated beam size. Coupling efficiencies above 59% measured compact gratings.

We measure the voltage-dependent phase shift in silicon waveguides strained by a nitride layer and show that, our measurements, is due to free carrier accumulation inside waveguides. Nonetheless, inverting applied voltage also inverts shift-an effect quasi-static surface charge nitride. Since measured on same order as recently published second-order nonlinearities attributed Pockels effect, inclusion of these carrier-based effects analysis experimental data paramount importance.

We report on two edge-coupling and power splitting devices for hybrid integration of III-V lasers with sub-micrometric silicon-on-insulator (SOI) waveguides. The proposed relax the horizontal alignment tolerances required to achieve high coupling efficiencies are suitable passively aligned assembly pick-and-place tools. Light is coupled on-chip single mode SOI waveguides almost identical efficiency, but a varying relative phase accommodating lateral misalignment between laser diode devices,...

The observation of the electro-optic effect in strained silicon waveguides has been considered a direct manifestation an induced χ(2) nonlinearity material. In this work, we perform high-frequency measurements on racetrack resonators. Strain is controlled by mechanical deformation waveguide. It shown that any optical modulation vanishes, independent applied strain, when voltage varies much faster than carrier effective lifetime and DC also largely strain. This demonstrates plasma dispersion...

We have investigated two novel concepts for the design of transmission lines in travelling wave Mach-Zehnder interferometer based Silicon Photonics depletion modulators overcoming analog bandwidth limitations arising from cross-talk between signal push-pull and reducing linear losses lines. experimentally validate demonstrate an E/O -3 dBe 16 GHz with a 4V drive voltage (in dual configuration) 8.8 dB on-chip insertion losses. Significant improvements result suppression cross-talk. An...

Abstract We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 carriers spaced by 60.8 GHz, as well silicon photonics (SiP) resonant ring modulators (RRMs) modulate individual channels. The requires reamplification provided an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams signal quality factors (Q-factors)...

We demonstrate an integrated 8 by 14 Gbps dense wavelength division multiplexed silicon photonics transceiver that makes use of external mode-locked laser as a light source and single semiconductor optical amplifier for post-modulation signal amplification. Remaining components necessary modulation, filtering (de‑)multiplexing are monolithically in chip. In all system experiments, eight channels jointly operated with independent data streams order to include impairments arising out nonlinear...

We present a novel resonant Mach-Zehnder modulator whose arms are each loaded with five identical resonators. Size and power consumption aggressively reduced compared to conventional modulators based on linear phase shifters. At the same time, large optical bandwidth of 3.8 nm is maintained. experimentally demonstrate open eye diagrams at 30 Gbps signal Q-factor remaining within factor 2 its peak value in an operational temperature range spanning 55°C.

We report recent progress made in our laboratory on travelling wave Mach-Zehnder Interferometer based Silicon Photonics modulators with segmented transmission lines, as well resonant ring and add-drop multiplexers peaking enhanced bandwidth extended beyond the photon lifetime limit. In microstructuring of electrodes results radio-frequency modes significantly deviating from transverse electromagnetic (TEM) condition allows for additional design freedom to jointly achieve phase matching,...

This paper reports a method to enable, for the first time, reconfigurable control of resonance splitting one or multiple arbitrarily selected azimuthal orders in microring resonator. is accomplished by inscribing Bragg gratings photosensitive Ge23Sb7S70 chalcogenide resonators via novel cavity-enhanced photoinscription process, which injection light at targeted C-band frequency induces spatially varying refractive index change. The so-formed grating precisely matches order without...

We implement a multi-color laser engine with silicon nitride photonic integrated circuit technology, that combines four fluorophore excitation wavelengths (405 nm, 488 561 640 nm) and splits them variable attenuation among two output fibers used for different microscope imaging modalities. With the help of volume engine’s optics is reduced by orders magnitude compared to its commercially available discrete counterpart. Light multiplexing implemented means directional coupler based device...

We demonstrate a silicon photonic transmitter for soliton-based communications enabling the interleaving of QPSK and APSK modulated soliton pulses overlapping in both time frequency domains. The nonlinear Fourier transform is used to determine adequate launch conditions facilitate equalization at receiver. A spectral efficiency 0.5 b/s/Hz per polarization reached over 5400 km transmission distance constitutes, best our knowledge, record such long distances. Linear minimum mean square error...

We present a flip-chip integration process in which the vertical alignment is guaranteed by mechanical contact between pedestals defined recess etched into silicon photonics chip and laser or semiconductor optical amplifier. By selectively etching up to active region of III-V materials, we can make accuracy independent on control applied layer thicknesses during fabrication, enabling tolerances below ±10 nm (Z-)direction.

Laser integration, optical coupling, and assembly are challenging problems that need to be further addressed reduce the manufacturing costs of silicon photonic-based products. In this paper, we propose novel coupling devices facilitate passive photonics chips with laser diodes fibers by means pick-and-place tools relaxing stringent alignment tolerances required for maintaining a high efficiency. these devices, lateral misalignment or fiber relative chip is accommodated varying phase...

We demonstrate a complete Silicon Photonics WDM link relying on single section semiconductor mode-locked laser and SOA to support up 12 multiplexed channels with bit error rate of 1e-12 at serial data rates 14 Gbps without channel pre-emphasis, equalization or forward correction. Individual reach free operation 25 multi-channel is shown be compatible standard 7% overhead hard decision transmitter receiver chips are hybridly integrated driver electronics. A detailed model derived verified....

We present wideband and large free spectral range optical filters with steep passband edges for the selection of adjacent WDM communication channels that can be reliably fabricated mainstream silicon photonics technology. The devices are based on three cascaded stages coupled resonator waveguides loaded a common bus waveguide. These differ in number resonators but implemented exactly identical unit cells, comprised matched racetrack layout uniform spacing between cells. different each stage...

The influence of Si and N in Ge(2)Sb(2)Te(5) (space group [Formula: see text]) on structure phase stability thereof was studied experimentally by thin film growth characterization as well theoretically ab initio calculations. It found that most probably accumulate the amorphous matrix embedding grains. incorporation these samples causes an increase crystallization temperature formation finer is more efficient increasing reducing grain size than which can be understood based bonding analysis....