G. Schöpe

ORCID: 0000-0002-1570-855X
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About
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Research Areas
  • Thin-Film Transistor Technologies
  • Silicon and Solar Cell Technologies
  • Silicon Nanostructures and Photoluminescence
  • ZnO doping and properties
  • Laser Material Processing Techniques
  • Conducting polymers and applications
  • Perovskite Materials and Applications
  • Chalcogenide Semiconductor Thin Films
  • Organic Electronics and Photovoltaics
  • Copper-based nanomaterials and applications
  • Ga2O3 and related materials
  • Acoustic Wave Resonator Technologies
  • Semiconductor materials and devices
  • Gas Sensing Nanomaterials and Sensors
  • Semiconductor Lasers and Optical Devices
  • Quantum Dots Synthesis And Properties
  • Semiconductor materials and interfaces
  • Semiconductor Quantum Structures and Devices
  • Silicon Carbide Semiconductor Technologies
  • Electron and X-Ray Spectroscopy Techniques
  • Aluminum Alloys Composites Properties
  • Advanced Surface Polishing Techniques

Forschungszentrum Jülich
2001-2025

Ernst Ruska Centre
2008

This study addresses the material properties of magnetron-sputtered aluminum-doped zinc oxide (ZnO:Al) films and their application as front contacts in silicon thin-film solar cells. Optimized exhibit high conductivity transparency, well a surface topography with adapted light-scattering to induce efficient light trapping We investigated influence on ZnO:Al amount alumina target substrate temperature during sputter deposition. The content influences carrier concentration leading different...

10.1063/1.2715554 article EN Journal of Applied Physics 2007-04-01

The enhancement of the fill factor in current generation perovskite solar cells is key for further efficiency improvement. Thus, methods to quantify losses are urgently needed. Two presented due finite resistance semiconducting layers cell as well its contacts. first method based on comparison between voltage dark and under illumination analyzed at equal recombination density results a voltage‐dependent series resistance. Furthermore, reveals existence strong photoshunt illumination. second...

10.1002/solr.202200507 article EN cc-by Solar RRL 2022-08-24

Abstract Thin‐film photovoltaic technology, based on hybrid metal halide perovskites, has achieved 25.2% and 16.1% certified power conversion efficiencies for solar cell module devices, respectively. Still, the gap between efficiency of small area cells large modules is greater than any other technology. Analysis loss mechanisms in n‐i‐p solution processed devices defined layer inhomogeneity inactive as two most prominent upscaling. In this study, we focus minimizing loss. We analyze point...

10.1002/pip.3312 article EN Progress in Photovoltaics Research and Applications 2020-08-19

An analysis of the monolithical series connection silicon thin-film modules with metal back contact fabricated by high speed laser ablation will be presented. Optically pumped solid state lasers wavelengths 1064 nm and 532 were used for patterning steps. The near infrared is applied to pattern TCO (P1) while green layer stack (P2) (P3). influence various parameters on performance amorphous microcrystalline was studied. In particular Si removal can significantly affect module efficiency....

10.1117/12.733556 article EN Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE 2007-08-29

10.1016/s1386-9477(02)00625-2 article EN Physica E Low-dimensional Systems and Nanostructures 2003-03-01

A detailed analysis of the front contact ablation step and silicon process for fabrication series interconnection thin-film modules in superstrate configuration is presented. In this study pulsed lasers with wavelengths 355 nm 532 were used. The was investigated zinc oxide as well tin dioxide applying an UV-laser from glass side. As measure quality achieved separation resistance line profile measurements studied by a green laser two dimensional Top-Hat profile. Here mainly assessed between...

10.4229/23rdeupvsec2008-3av.2.10 article EN 23rd European Photovoltaic Solar Energy Conference and Exhibition, 1-5 September 2008, Valencia, Spain 2008-11-01

Large area glass/ZnO-films were prepared by either dc-magnetron sputtering from ceramic targets or mf-sputtering metallic and compared to small laboratory-type rf-sputtered ZnO. The initially smooth films exhibit excellent electrical (resistivity=4-9.10/sup -4/ /spl Omega/cm) optical (average transmission >80% for visible light) properties develop a surface texture upon etching in diluted hydrochloric acid. Independent of sputter technique (dc rf) substrate size, higher temperatures lower...

10.1109/pvsc.2000.915994 article EN 2000-01-01
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