A5011098036- Particle Detector Development and Performance
- Radiation Detection and Scintillator Technologies
- Advanced Semiconductor Detectors and Materials
- CCD and CMOS Imaging Sensors
- Nuclear Physics and Applications
- Semiconductor materials and devices
- Advanced X-ray Imaging Techniques
- Solar and Space Plasma Dynamics
- Electron and X-Ray Spectroscopy Techniques
- Advanced Physical and Chemical Molecular Interactions
- Medical Imaging Techniques and Applications
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and interfaces
- Ionosphere and magnetosphere dynamics
- Boron and Carbon Nanomaterials Research
- Silicon and Solar Cell Technologies
- Astro and Planetary Science
- X-ray Spectroscopy and Fluorescence Analysis
- Advanced Chemical Physics Studies
- Radiation Effects in Electronics
- Cell Image Analysis Techniques
- Graphene research and applications
- Diamond and Carbon-based Materials Research
- Spacecraft Design and Technology
- Chemical and Physical Properties of Materials
Lawrence Berkeley National Laboratory
2011-2023
Interface (United States)
1995-1998
University of California, Irvine
1995-1998
Tohoku University
1996-1997
Institute for Materials Research, Tohoku University
1997
Advanced Institute of Materials Science
1997
Rockwell Automation (United States)
1991
We present here a scanning tunneling microscope study of the initial bonding structure and subsequent reaction mechanism ${\mathrm{C}}_{2}{\mathrm{H}}_{2}$ with Si(001) surface. Upon exposure sample at room temperature to 0.2 L (approximately 20% coverage) adsorption molecule on alternate dimer pairs is observed, leading either local $2\ifmmode\times\else\texttimes\fi{}2$ or $c(2\ifmmode\times\else\texttimes\fi{}4)$ structure. In filled-state image, minimum observed in center reacted pairs,...
Author(s): Ciston, Jim; Johnson, Ian J; Draney, Brent R; Ercius, Peter; Fong, Erin; Goldschmidt, Azriel; Joseph, John M; Lee, Jason Mueller, Alexander; Ophus, Colin; Selvarajan, Ashwin; Skinner, David E; Stezelberger, Thorsten; Tindall, Craig S; Minor, Andrew Denes, Peter
Author(s): Ercius, Peter; Johnson, Ian; Brown, Hamish; Pelz, Philipp; Hsu, Shang-Lin; Draney, Brent; Fong, Erin; Goldschmidt, Azriel; Joseph, John; Lee, Jason; Ciston, Jim; Ophus, Colin; Scott, Mary; Selvarajan, Ashwin; Paul, David; Skinner, Hanwell, Marcus; Harris, Chris; Avery, Patrick; Stezelberger, Thorsten; Tindall, Craig; Ramesh, Ramamoorthy; Minor, Andrew; Denes, Peter
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> Silicon detectors with very thin entrance contacts have been fabricated for use in the IMPACT SupraThermal Electron (STE) instrument on STEREO mission and Solid State Telescopes THEMIS mission. The silicon diode were using a 200 Å thick phosphorous doped polysilicon layer that formed window. A aluminum was deposited top of order to reduce their response stray light. Energy loss contact about 350...
A low-noise resistive-feedback front-end electronics assembly has been developed for use with p-type point contact (PPC) Ge detectors in low background experiments. The front end was designed to have a mass and potentially radioactivity. It is fabricated on fused silica substrate, consists of JFET, feedback resistor formed from an amorphous thin film, capacitor based the stray capacitance between circuit traces. substrate provides appropriate thermal impedance allow FET operate at optimal...
Semiconductor radiation detectors are routinely used for the detection, imaging, and spectroscopy of gamma-ray, x-ray, charged particles. In basic form, a detector is comprised semiconductor crystal with two or more electrodes formed on its surfaces. Besides allowing application bias voltage, one also serve as readout electrode. Charge carriers drifting across induce charge signal electrode, which can then be measured by charge-sensitive amplifier connected to Although in general itself,...
We propose a design for high-resolution single-photon emission computed tomography (SPECT) system in vivo /sup 125/I imaging small animal using pixellated lithium-drifted silicon [Si(Li)] detectors. The proposed detectors are expected to have high interaction probability (>90%), good energy resolution [<15% full-width at half-maximum (FWHM)], and intrinsic spatial (/spl sim/1 mm FWHM). SPECT will consist of dual head detector geometry with the distance between ranging 30-50 minimize mouse...
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Context. Silicon solid-state detectors are commonly used for measuring the specific ionization, d E ∕d x , in instruments designed identifying energetic nuclei using versus total energy technique space and laboratory. The threshold species resolution of strongly depend on thickness uniformity these detectors. Aims. Research has been carried out to develop processes fabricating that thinner than 15 μ m, have a better 0.2 m over cm 2 areas, rugged enough survive acoustic vibration environments...
Tagging of neutrons (2.45 MeV) with their associated 3He particles from deuterium-deuterium (D-D) fusion reactions has been demonstrated in a compact neutron generator setup enabled by high brightness, microwave-driven ion source fraction deuterons. Energy spectra well separated peaks the D-D reaction products, 3He, tritons, and protons, were measured silicon PIN diode. The detected using liquid scintillator detector pulse shape discrimination. By correlating detection events time, we...
Segmented lithium drifted silicon detectors are being developed for use in large Compton cameras and medical imaging. We have successfully fabricated 3.5 mm thick crossed-strip with active areas of 40/spl times/40 mm/sup 2/ a 2 strip pitch. These utilize new contact technology consisting boron implanted p-type an amorphous (/spl alpha/-Si) n-type contact. Good energy resolution excellent separation was obtained from both contacts at relatively high operating temperatures. An 2.1 keV FWHM 122...
We have developed a charge-coupled device (CCD) with 5 μm × 45 pixels on high-resistivity silicon. The fully depleted 200 μm-thick silicon detector is back-illuminated through 10 nm-thick in situ doped polysilicon window and thus highly efficient for soft >8 keV hard X-rays. described here 1.5 megapixel CCD 2496 620 pixels. pixel camera geometry was optimized Resonant Inelastic X-ray Scattering (RIXS) particularly advantageous spectrometers limited arm lengths. In this article, we describe...
The European X-ray Free Electron Laser (XFEL.EU) is currently being commissioned in Schenefeld, Germany. From 2017 onwards it will provide spatially coherent X-rays of energies between 0.25 keV and 25keV with a unique timing structure. One the detectors foreseen at XFEL.EU for soft regime (energies below 6keV) quasi column-parallel readout FastCCD developed by Lawrence Berkeley National Lab (LBNL) specifically requirements. Its sensor has 1920×960 pixels 30μm ×30μm size beam hole middle...