A5015332552- Quantum and electron transport phenomena
- Magnetic properties of thin films
- Semiconductor Quantum Structures and Devices
- Quantum Information and Cryptography
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Neural Networks and Reservoir Computing
- Quantum optics and atomic interactions
- Spectroscopy and Quantum Chemical Studies
- Photonic and Optical Devices
- Magnetic Field Sensors Techniques
- Optical Network Technologies
- Physics of Superconductivity and Magnetism
- Calibration and Measurement Techniques
- Microfluidic and Bio-sensing Technologies
- Neural Networks and Applications
- Characterization and Applications of Magnetic Nanoparticles
- Photoacoustic and Ultrasonic Imaging
- Rare-earth and actinide compounds
- Magnetic Properties of Alloys
- Infrared Target Detection Methodologies
- Magnetic and transport properties of perovskites and related materials
- Gas Sensing Nanomaterials and Sensors
- Corporate Taxation and Avoidance
- Blind Source Separation Techniques
Praevium Research (United States)
2025
University of California, Los Angeles
2019-2020
William & Mary
2016
Williams (United States)
2016
We have deterministically created a stable topological spin texture in magnetic tunnel junctions (MTJ) by using pulsed or microwave currents. The is characterized field-dependent intermediate resistance state and new resonance. Micromagnetic simulations show that the observations are consistent with nucleation of single skyrmion, facilitated spatially nonuniform stray field. unique resonance spectrum identified as skyrmion breathing mode diameter 75 nm estimated. This work shows possibility...
Whilst holding great promise for low noise, ease of operation and networking, useful photonic quantum computing has been precluded by the need beyond-state-of-the-art components, manufactured millions. Here we introduce a manufacturable platform with photons. We benchmark set monolithically-integrated silicon photonics-based modules to generate, manipulate, network, detect qubits, demonstrating dual-rail qubits $99.98\% \pm 0.01\%$ state preparation measurement fidelity, Hong-Ou-Mandel...
Abstract Quantum dots in silicon are a promising architecture for semiconductor quantum computing due to high degree of electric control and compatibility with existing fabrication processes. Although electron charge spin prominent methods encoding the qubit state, valley states can also store information via valley-orbit coupling protection against noise. By observing coherent oscillations between Si/SiGe double dot device tuned two-electron configuration, we measure energy splitting both...
We have investigated the charge dynamics and nature of many-body interactions in La- Pr- doped $\mathrm{CaF}{\mathrm{e}}_{2}\mathrm{A}{\mathrm{s}}_{2}$. From infrared part optical conductivity, we discover that scattering rate mobile carriers above 200 K exhibits saturation at Mott-Ioffe-Regel limit metallic transport. However, dc resistivity continues to increase with temperature due loss Drude spectral weight. The weight increasing is seen a wide range uncollapsed tetragonal phase, this...
The presence of nondegenerate valley states in silicon can drastically affect electron dynamics silicon-based heterostructures, leading to spin relaxation and spin-valley coupling. In the context solid-state qubits, it is important understand interplay between degrees freedom avoid or alleviate these decoherence mechanisms. Here we report observation from excited state ground a $\mathrm{Si}/\mathrm{Si}$-$\mathrm{Ge}$ quantum dot at zero magnetic field. Valley-state readout aided by...
In an externally driven multilevel quantum system observation that the NEXT jump has not yet happened affects its future development. previous work [Phys. Rev. A36, 929 (1987)] it was shown this class of measurement makes possible to observe remarkably long dark intervals -- or intermittency in atomic fluorescence atom with 3 more levels. Those calculations were carried out when oscillations Rabi flopping between ground state and a strongly fluorescing fast compared lifetime. systems solid...
The silicon metal-oxide-semiconductor quantum dot architecture is a leading approach for the physical implementation of semiconductor computing. One major challenge scalable dots presence charge impurities. Electron-beam lithography (EBL), almost universally used to fabricate devices, known create such defects at Si/SiO2 interface. To eliminate need EBL, we have transferred metal gate pattern onto substrate using nano-imprint lithography. Critical features with 50 nm scale and separation can...