A5001637978- Quantum and electron transport phenomena
- Molecular Junctions and Nanostructures
- Surface and Thin Film Phenomena
- Photonic and Optical Devices
- Semiconductor materials and devices
- Semiconductor Lasers and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Photonic Communication Systems
- Semiconductor materials and interfaces
- Modular Robots and Swarm Intelligence
- Pickering emulsions and particle stabilization
- Micro and Nano Robotics
- Nanowire Synthesis and Applications
- Advanced Electron Microscopy Techniques and Applications
- Force Microscopy Techniques and Applications
- Electron and X-Ray Spectroscopy Techniques
- Topological Materials and Phenomena
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor Quantum Structures and Devices
- Neural Networks and Reservoir Computing
- Ion-surface interactions and analysis
- Theoretical and Computational Physics
University Hospital Münster
2025
University College London
2019-2022
Leibniz Institute for High Performance Microelectronics
2019-2022
London Centre for Nanotechnology
2019-2022
Forschungszentrum Jülich
2016-2017
Over the past two decades, prototype devices for future classical and quantum computing technologies have been fabricated by using scanning tunneling microscopy hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains only donor precursor molecule demonstrated as compatible technique. The potential benefits of placement alternative dopant species have, until now, remained unexplored. In this work, we...
Contrast agents (CAs) are essential in biomedical imaging to aid the diagnosis and therapy monitoring of disease. However, they typically restricted one modality have fixed properties such as size, shape, toxicity profile or photophysical characteristics, which hampers a comprehensive view biological processes. Herein, we introduce rationally designed dye assemblies unique CA platform for simultaneous multimodal multiscale imaging. To this end, synthesized series amphiphilic aza‐BODIPY dyes...
Contrast agents (CAs) are essential in biomedical imaging to aid the diagnosis and therapy monitoring of disease. However, they typically restricted one modality have fixed properties such as size, shape, toxicity profile or photophysical characteristics, which hampers a comprehensive view biological processes. Herein, we introduce rationally designed dye assemblies unique CA platform for simultaneous multimodal multiscale imaging. To this end, synthesized series amphiphilic aza‐BODIPY dyes...
We present a comprehensive study on the formation and tuning of Schottky barrier NiGeSn metallic alloys Ge1-xSnx semiconductors. First, Ni metallization GeSn is investigated for wide range Sn contents (x = 0–0.125). Structural analysis reveals existence different poly-crystalline Ni3(GeSn)5 phases depending content. Electrical measurements confirm low sheet resistance 12 Ω/□ almost independent extracted from height in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes barriers holes below...
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms qubits have largely focused on phosphorus in Positioning silicon precision requires a thermal incorporation anneal, but the low success rate this step been shown be limitation prohibiting scale-up large-scale devices. Here, we present comprehensive study of...
In this paper we present a systematic study of GeSn n-FETs. First, process modules such as high-k metal gate stacks and NiGeSn - metallic contacts for use source/drain are characterized discussed. alloys different Sn content allow the capacitance-voltage (CV) contact characteristics both direct indirect bandgap semiconductors. We then n-FET devices have fabricated. The device characterization includes temperature dependent IV characteristics. As important step towards tunnel-FET Ge0.87Sn0.13...
Over the last two decades, prototype devices for future classical and quantum computing technologies have been fabricated, by using scanning tunneling microscopy hydrogen resist lithography to position phosphorus atoms in silicon with atomic-scale precision. Despite these successes, phosphine remains only donor precursor molecule demonstrated as compatible technique. The potential benefits of placement alternative dopant species have, until now, remained unexplored. In this work, we...
Abstract Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic‐scale devices using donor atoms qubits have largely focused on phosphorus in Positioning silicon precision requires a thermal incorporation anneal, but the low success rate this step been shown be limitation prohibiting scale‐up large‐scale devices. Here, we present comprehensive...
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms qubits have largely focussed on phosphorus in Positioning silicon precision requires a thermal incorporation anneal, but the low success rate this step been shown be limitation prohibiting scale-up large-scale devices. Here, we present comprehensive study of...