Time-resolved threshold switching characteristics including transient parameters such as delay time and holding voltage are reported for a nanoscale GeTe6 Ovonic (OTS) device. The dependence of the process has been studied, revealing in less than 5 ns fastest case. A constant is observed different pulses applied, which an indicative stable on state amorphous phase. In addition, potential devices OTS selectors validated.

We report an inelastic (Raman) light scattering study on bulk crystalline GeTe (c-GeTe) and amorphous (a-GeTe) thin films found to show pronounced similarities in local structure between the two states. In c-GeTe, observed Raman modes represent Ge atoms are three different environments, namely, tetrahedral, distorted, defective octahedral sites. On other hand, a-GeTe, spectrum reveals sites tetrahedral environment. suggest that of c-GeTe consists highly distorted as well sites, which leads...

Abstract The threshold switching (TS) dynamics of Ovonic Threshold Switching (OTS) selector devices play a pivotal role in the programming speeds Phase Change Random Access Memory (PCRAM) and Selector Only (SOM). TS phenomenon amorphous rapidly reduces initial high-resistance state to low-resistance within nanoseconds. In this work, we present detailed experimental study time-resolved transient characteristics GeTe4 OTS devices, including measurements delay time holding voltage....

Phase‐change memory (PCM) has emerged as a promising nonvolatile candidate due to low power, high speed, and excellent scalability. However, imprecise fabrication processes make these nanoscale devices susceptible process variation. The variation can introduce deviations in the structural parameters even lead modification shape of cylindrical structures. In this aspect, eccentricity is key parameter that quantifies irregularity cylindrical‐based device Herein, significantly influence thermal...

Abstract Phase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, unique property-portfolio high picosecond threshold in In 3 SbTe 2 (IST) PCM devices. Our experimental findings reveal an amorphous IST compared to most other phase materials....

Abstract Although phase-change memory (PCM) offers promising features for a ‘universal memory’ owing to high-speed and non-volatility, achieving fast electrical switching remains key challenge. In this work, correlation between the rate of applied voltage dynamics threshold-switching is investigated at picosecond-timescale. A distinct characteristic feature enabling rapid critical known as threshold validated by an instantaneous response steep current rise from amorphous off on state...

Minimizing the dimensions of electrode could directly impact energy-efficient threshold switching and programming characteristics phase change memory devices. A ∼12–15 nm AFM probe-tip was employed as one electrodes for a systematic study as-deposited amorphous GeTe6 thin films. This configuration enables low power with an extremely steady state current in on 6–8 nA. Analysis over 48 different probe locations sample reveals stable Ovonic behavior at voltage, VTH 2.4 ± 0.5 V off retained...

Reversible switching between highly resistive (binary “0”) amorphous phase and low “1”) crystalline of chalcogenide-based Phase Change Materials is accredited for the development next generation high-speed, non-volatile, data storage applications. The doped Sb-Te based materials have shown enhanced electrical/optical properties, compared to Ge-Sb-Te family high-speed memory devices. We report here local atomic structure as-deposited Ag5In5Sb60Te30 (AIST) In3SbTe2 (IST) change using X-ray...

Current-controlled promotion of crystallization offers stable multi-level resistances after threshold switching process which are being exploited for multi-bit phase change memory applications. In this paper, ultra-high contrast resistance characteristics In3SbTe2 device is demonstrated by the means systematically varying current-controlled a wide range currents starting from few μA to 40 and corresponding levels ranging 10 MΩ kΩ, respectively. Also, conduction in amorphous stability...

Ge15Te85−xSix (2 ≤ x 12) glasses of a wide range compositions have been found to exhibit electrical switching at threshold voltages in the 100–600 V, for sample thickness 0.3 mm. The samples become latched ON state (memory behaviour) higher currents (>1 mA). However, is be reversible (threshold if current limited lower values (≤0.7 While with 5 normal switching, an unstable behaviour seen I–V characteristics > during transition state. Further, sparking electrode region and splashing active...

Phase‐change materials (PCM) show remarkable property‐contrast from amorphous to crystalline phase that forms the basis for high‐speed non‐volatile memory device applications. Despite understanding local structure and physical properties of these phases, a systematic study on phase‐change behavior is essential. Here, we used in situ UV–Vis–NIR spectroscopic measurements evolution optical band gap ( E g ) disorder described by Tauc parameter B ), temperatures 90 480 K cubic phases Ge 1 Sb 4...

The scaling of RESET current (I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RESET</sub> ) used for reamorphization in phase-change memory (PCM) devices has been a challenging task to meet the energy-efficient programming. faithful prediction IRESET scaled-down demands realistic physical models order examine lowpower, miniaturized device characteristics, and potential highly scalable PCM technology. Therefore, modeling intrinsic interface...

Bulk Ge15Te83Si2 glass has been found to exhibit memory-type switching for 1mA current with a threshold electric field of 7.3kV∕cm. The electrical set and reset processes have achieved triangular rectangular pulses, respectively, amplitude. In situ Raman scattering studies indicate that the degree disorder in is reduced from off state. local structure sample under condition similar results are consistent which can be easily.

Highly reproducible and precisely controlled gradual variation in optical reflectivity or electrical resistance between amorphous crystalline phases of phase change (PC) material is a key requirement for multilevel programming. Here we report high-contrast set reset operations through accumulative switching growth-dominated AgInSbTe PC using nanosecond laser-based pump-probe technique. The precise tuning fractions crystallized re-amorphized region achieved by means controlling the number...

The study focuses on the polarization dynamics of ferroelectric phase under an external magnetic field in a trilayered magnetoelectric (ME) composite 0.94(Na0.5Bi0.5TiO3)-0.06BaTiO3 (NBT-BT)/CoFe2O4(CFO)/NBT-BT. With estimation gradient size strain across interface, thin films with varying top layer (NBT-BT) thicknesses were fabricated. piezoelectric displacement curves revealed linear characteristics for 30 nm NBT-BT ME due to presence dominant interfacial strain. Time-resolved switching...

We report here femtosecond laser-driven transient snapshots of ultrafast crystallization Ge2Sb2Te5 films from its as-deposited amorphous phase, and the local structural change is validated by micro-Raman spectroscopy x-ray diffraction. The decay time constant ∼5 ps in spectra with a precise temporal resolution using 400 nm (pump) reveals about 68 volumetric percentage at remarkably low fluence 4.78 mJ·cm-2. This attributed to reiterated excitation after complete carrier relaxation formation...

Multilevel storage in chalcogenide‐based phase‐change materials is one of the desired characteristics to design neuromorphic and in‐memory computing applications. However, precisely controlling crystalline amorphous fraction achieve reliable multilevel states key challenges switching. Herein, switching focused on aspect optical domain, where it enjoys benefits higher bandwidth with low delay connectivity suitable for non‐von Neumann architecture. The essential requirements are discussed...