Shivendra Kumar Pandey

ORCID: 0000-0002-0576-3301
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About
Contact & Profiles
Research Areas
  • Phase-change materials and chalcogenides
  • Chalcogenide Semiconductor Thin Films
  • Advanced Memory and Neural Computing
  • Modular Robots and Swarm Intelligence
  • Advanced Materials and Mechanics
  • Transition Metal Oxide Nanomaterials
  • Ferroelectric and Negative Capacitance Devices
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography
  • Low-power high-performance VLSI design
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and devices
  • Micro and Nano Robotics
  • Solid-state spectroscopy and crystallography
  • Electronic and Structural Properties of Oxides
  • Nonlinear Optical Materials Studies
  • Analog and Mixed-Signal Circuit Design
  • Electrowetting and Microfluidic Technologies
  • Neuroscience and Neural Engineering
  • Cloud Computing and Resource Management
  • Energy Efficient Wireless Sensor Networks
  • Advanced biosensing and bioanalysis techniques
  • Cellular Automata and Applications
  • Glass properties and applications
  • IoT-based Smart Home Systems

National Institute Of Technology Silchar
2020-2025

Indian Institute of Management Rohtak
2020

Johns Hopkins University
2011-2018

Indian Institute of Technology Indore
2016-2018

Jawaharlal Nehru University
2017-2018

National Institute of Technical Teachers’ Training and Research
2016-2017

Intel (United States)
2015

Lovely Professional University
2014

University of Florida
2010

Self-assembly has emerged as a paradigm for highly parallel fabrication of complex three-dimensional structures. However, there are few principles that guide priori design, yield, and defect tolerance self-assembling We examine with experiment theory the geometric underlie self-folding submillimeter-scale higher polyhedra from two-dimensional nets. In particular, we computationally search nets within large set possibilities then test these experimentally. Our main findings ( i ) compactness...

10.1073/pnas.1110857108 article EN Proceedings of the National Academy of Sciences 2011-12-02

Phase change memory (PCM) is a promising technology to emulate the synaptic behavior of neuromorphic systems. The efficient development artificial arrays for brain-inspired applications crucial overcoming Von Neumann bottleneck at device level. Hence, GeTe-based PCM performance investigated in this work applications. XRD analysis GeTe material shows amorphous rhombohedral structural evolution 250 °C annealing temperature. intensity Raman spectra peaks increases, while FWHM decreases,...

10.1021/acsaelm.4c01802 article EN ACS Applied Electronic Materials 2025-01-07

Abstract The bipolar switching phenomenon is observed in the MgO-based memory cell having a metal-oxide-metal (W/MgO/Cu) structure. MgO thin film offers high transmittance of 86 - 88% for visible light, measured by UV-Visible spectroscopy. An optical bandgap 4.2 eV estimated from Tauc’s plot calculation absorption spectra film. In addition, XPS scan on O 1s and Mg 2p peaks reveals types chemical elements rf sputtered peak at 49.36 suggests oxidization Mg, two 529.5 531.6 core level indicate...

10.1088/1742-6596/2426/1/012031 article EN Journal of Physics Conference Series 2023-02-01

Biotinylated microtubules partially coated with streptavidin and gliding on a surface kinesin motors can cross-link each other assemble into nanospools diameter of few micrometres. The size distribution these is determined, it shown simulations microtubule that spools are too small to be formed by thermally activated turns in the direction (a Brownian ratchet mechanism). Instead, spool formation primarily result two processes: pinning inactive simultaneous cross-linking multiple microtubules.

10.1039/c0sm00802h article EN Soft Matter 2010-12-08

There are numerous techniques such as photolithography, electron-beam lithography and soft-lithography that can be used to precisely pattern two dimensional (2D) structures. These technologies mature, offer high precision many of them implemented in a high-throughput manner. We leverage the advantages planar combine with self-folding methods(1-20) wherein physical forces derived from surface tension or residual stress, curve fold structures into three (3D) In doing so, we make it possible...

10.3791/50022 article EN Journal of Visualized Experiments 2013-01-17

Current-controlled promotion of crystallization offers stable multi-level resistances after threshold switching process which are being exploited for multi-bit phase change memory applications. In this paper, ultra-high contrast resistance characteristics In3SbTe2 device is demonstrated by the means systematically varying current-controlled a wide range currents starting from few μA to 40 and corresponding levels ranging 10 MΩ kΩ, respectively. Also, conduction in amorphous stability...

10.1002/pssr.201700227 article EN physica status solidi (RRL) - Rapid Research Letters 2017-08-16

We investigate the utility of a mathematical framework based on discrete geometry to model biological and synthetic self-assembly. Our primary example is self-assembly icosahedral viruses; our surface-tension-driven self-folding polyhedra. In both instances, process modeled by decomposing polyhedron into set partially formed intermediate states. The all intermediates called configuration space, pathways assembly are as paths in kinetics yield rate equations, Markov chains, or cost functions...

10.1162/artl_a_00144 article EN Artificial Life 2014-08-22

Phase‐change materials (PCM) show remarkable property‐contrast from amorphous to crystalline phase that forms the basis for high‐speed non‐volatile memory device applications. Despite understanding local structure and physical properties of these phases, a systematic study on phase‐change behavior is essential. Here, we used in situ UV–Vis–NIR spectroscopic measurements evolution optical band gap ( E g ) disorder described by Tauc parameter B ), temperatures 90 480 K cubic phases Ge 1 Sb 4...

10.1002/pssb.201552803 article EN physica status solidi (b) 2016-02-26

Phase-change materials show promising features for high-speed, non-volatile, random access memory, however achieving a fast electrical switching is key challenge. We report here, the dependence of dynamics including transient parameters such as delay time, etc., on applied voltage and set process In3SbTe2 phase-change memory devices at picosecond (ps) timescale. These are found to exhibit threshold-switching critical called threshold-voltage, VT 1.9 ± 0.1 V, having time 25 ns. Further,...

10.1063/1.4953196 article EN Applied Physics Letters 2016-06-06

The van der Pauw (VDP) method is widely used to identify the resistance of planar homogeneous samples with four contacts placed on its periphery. We have developed a fully automated thin film measurement setup using VDP capability precisely measuring wide range resistances from few mΩ up 10 GΩ under controlled temperatures room-temperature 600 °C. utilizes robust, custom-designed switching network board (SNB) for current-voltage characteristics automatically at different source-measure...

10.1063/1.4998340 article EN Review of Scientific Instruments 2018-03-01

Herein, a comprehensive investigation into the optical, local chemical state, and electrical properties of less explored magnesium oxide (MgO) are presented for resistive switching data storage applications in reference to well‐documented hafnium (HfO 2 ). The observed state from X‐ray photoelectron spectroscopy (XPS) analysis yields nonlattice oxygen peak O 1s spectra, indicating potential polycrystalline MgO analogous amorphous HfO as‐deposited thin films. optical through UV–visible...

10.1002/pssb.202200103 article EN physica status solidi (b) 2022-05-19

The unique property of fast and reversible switching between SET (crystalline, highly conductive) RESET (amorphous, resistive) phases phase change materials has led to its usage in non-volatile memory applications. quest for new with enhanced properties is utmost importance developing devices that meet the current demand high speed, better data retention, multi-bit storage capabilities. We report systematic changes occurring optical bandgap (Eg) structural disorder (B12) In3SbTe2 (IST)...

10.1063/5.0089399 article EN Journal of Applied Physics 2022-05-24

This paper present a comparison between the design of 8T adder based Carry Select Adder (CSA) and 10T CSA. Using both designs adders 4-bit CSA architecture has been developed compared with 28T The reduced delay, power area as slight tradeoff for to analysis shows that is better than work evaluates performance in terms power, delay using 180nm CMOS process technology Cadence Virtuoso tool Spectre simulator.

10.1109/iccsp.2014.6949993 article EN International Conference on Communication and Signal Processing 2014-04-01

The assembly of integrated circuits in three dimensions (3D) provides a possible solution to address the ever-increasing demands modern day electronic devices. It has been suggested that by using third dimension, devices with high density, defect tolerance, short interconnects and small overall form factors could be created. However, apart from pseudo 3D architecture, such as monolithic integration, die, or wafer stacking, creation paradigms integrate low-complexity cellular building blocks...

10.3390/mi7050078 article EN cc-by Micromachines 2016-04-28

To overcome physical size limitations in scaling transistors inherently two-dimensional geometries, efforts are being directed at wafer stacking to implement more quasi three-dimensional (3D) architectures. However, significant and unprecedented gains terms of packing speed can be achieved if CMOS components integrated truly 3D cellular porous In this paper, we present our initial results create prototype computational devices by self-assembly. We first describe the architecture based on...

10.1109/nanoarch.2013.6623055 article EN 2013-07-01

NoSQL databases are distributed, non-relational designed for large-scale data storage and parallel processing across a large number of commodity servers. Cassandra is database that stores in non-related tabular forms. works on "query at time" table" concept. In our daily life the queries user related to each other. If by related, is, current query previous query, then there no support state this. runs entire table because has neither memory remember result nor supports VIEW or JOIN tables...

10.1109/icccnt.2017.8204142 article EN 2022 13th International Conference on Computing Communication and Networking Technologies (ICCCNT) 2017-07-01

In this paper, we proposed a novel clustering approach for data transmission. The method improves the lifetime of Wireless Sensor Network (WSN). have considered remaining energy sensor node and distance between to sink as key factor selecting Cluster Head (CH). Because from node, hence is able solve hotspot problem, which major issue in WSN. We taken leading factor, so get better result with respect consumption transmission nodes base station. Most models are focused only on but well...

10.1109/confluence.2019.8776615 article EN 2022 12th International Conference on Cloud Computing, Data Science & Engineering (Confluence) 2019-01-01

The formation and disruption of conducting filament (CF) are responsible for the SET/RESET switching resistive random access memory (ReRAM). ReRAM enters into a low state soon after complete CF process is followed by radial growth during ON-state. present investigation aims to develop numerical analytical model realize effect radius on local temperature rise activation power, combining thermal reaction (TRM) power signature model. carried out using finite element method obtain distribution...

10.1088/1361-6641/ac1052 article EN Semiconductor Science and Technology 2021-06-30

The concept of utilizing precisely patterned and chemically loaded 3D porous containers akin to chemical voxels enable dynamic visual patterns via spatial temporal control both local global release is described. Using numerical simulations experiments, it shown how variations in porosity, volume, shape, relative positioning the can be used types images that are formed with space time. Moving generated controlled from an array create animation a running man thereby illustrating...

10.1002/adfm.201500281 article EN Advanced Functional Materials 2015-05-28

Abstract The amorphous to crystalline phase transition in Ge 2 Sb Te 5 (GST) change material is investigated using XRD and the systematic variation optical band-gap ( E g ) structural disorder B 1/2 employing UV-Vis-NIR spectroscopy. observed have value of 0.708 eV while (200 °C) shows 0.442 eV. Variation slope 13.4 % noted around crystallization temperature (150 °C), depicting reduction hence ordering forming cubic phase. local upon occurs due alternation atomic bonding configurations,...

10.1088/1742-6596/2426/1/012045 article EN Journal of Physics Conference Series 2023-02-01

Herein, the physical properties of HfO2 thin films such as crystal structure, chemical composition, transmissivity, and bandgap along with a comprehensive analytical model are investigated for resistive switching applications. The XPS measurements confirm atomic percentage 34.55% 65.45% hafnium oxygen in sputtered layer. nonlattice oxide layer indicates potential. Furthermore, amorphous structure deposited film is ensured from XRD scanning. UV–vis spectroscopy study suggests high...

10.1021/acsaelm.2c01350 article EN ACS Applied Electronic Materials 2023-01-06

Wireless Sensor Networks (WSN) play an essential part in the Technical sector. Generally, it is used Agriculture, landslide detection, Military Surveillance & target tracking, Environmental Monitoring, Air pollution monitoring, Water Quality etc. The WSN a dispersed system that combines multiple sensors and connects them to Base Station, also called BS. All gather data received by BS collects information from sensors. node has limited power, so vital use these resources effectively. most...

10.1109/icicat57735.2023.10263716 article EN 2023-06-23
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