In this article, the reliability of planar, symmetrical, and asymmetrical trench SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s is analysed under repetitive short circuit impulses at 300 450 K. Both static dynamic parameters are measured to characterize degradation pattern three structures. The mechanisms analyzed internal electro-thermal behavior revealed through TCAD models. It has been found out that there minor for...

Using a simple solid-state mixed oxides method, dense La2Mo2O9 ceramics with relative density higher than 94% were prepared at relatively low sintering temperatures (<960°C) and the crystal structure, dielectric properties studied in some details. Splitting peaks XRD profiles evidenced presence of monoclinic phase. Optimum microwave frequency achieved best-sintered sample 920°C, moderate permittivity 20.6, temperature coefficient resonance −38 ppm/°C, but quality factor Q×f ∼ 7,160 GHz (f =...

Pole-to-pole DC faults on HB-MMC-VSC-HVDC schemes impose significant risk of cascade failure IGBT/diode pairs. Other novel topologies with fault blocking capability, i.e. AAC converters, and circuit breakers are not yet fully matured. Therefore, silicon thyristors used to bypass the until AC activate. However, also at due capacitor voltage collapse high junction temperatures caused imbalanced reverse recovery current conduction. Hence, cycles included as part IEC standard 62 501 HVDC...

The continuous solar collector is a promising heater and reactor for the hydrothermal liquefaction (HTL) of microalgae biomass. To enhance heat transfer conversion slurry in solar-driven reactors, static mixer inserted flow channel collector. A numerical model combining CFD HTL reactions biomass proposed. Six composition equations protein, carbohydrates, lipids, biocrude, aqueous phase biogas were proposed, while corresponding kinetics utilized to simulate rate reactants products. effects...

In this paper, the reliability of planar, symmetrical, and asymmetrical SiC MOSFET is compared under repetitive short circuit shocks. Both static dynamic parameters are tested after certain cycles to investigate degradation pattern devices. It has been found out that planar device highest barely degraded for almost all 5000 cycles. The symmetrical lowest reliability, which shows 50 ultimately fails 141 significant 100 turn-on/off 1000 For both devices, directly linked damage gate oxide.

Through extensive experimental measurements for the static and dynamic characteristics, commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power cycling. The forward voltage of diodes is used to indirectly measure junction temperature. SiC feature smaller die size, less reverse recovery charge on-resistance when compared closely rated diodes. Nevertheless, during cycling experiments, bipolar degradation contact metallization in gives rise increase even though its...

The 4H-SiC vertical NPN BJTs are attractive power devices with potentials to be used as high switching voltage ratings in range of 1.7 kV and operating temperatures. In this paper, the advantages terms transients current gain over their silicon counterparts is illustrated by means extensive experimental measurements modelling, including investigation level injection, a common phenomenon bipolar that influences rates DC gain. two device types have been tested at 800 V maximum temperature 175...

In this paper, the ruggedness performance of GaN HEMT and SiC JFET devices in cascode configuration with a low voltage silicon power MOSFET has been evaluated experimentally. The impact bus on drain current avalanche energy are investigated as well temperature sweep to enable analysis alternation these parameters Unclamped Inductive Switching (UIS) devices. experimental measurements show that have lower rating when compared closely rated just before failure. can also withstand higher...

In this digest, the performance of four generations power MOSFETs, namely 950-V, 14-A Silicon Super-Junction MOSFET, 1.2-KV, 22-A Carbide (SiC) Planar and 17-A Symmetrical 19-A Asymmetrical Double-trench SiC MOSFETs are discussed in terms reverse recovery characteristics its impact on avalanche ruggedness device, based different failure mechanisms. The experimental measurements performed at a wide range switching rates temperatures ranging from <tex...

Through comprehensive experimental measurements and TCAD simulation, it is shown that the avalanche ruggedness of SiC MPS & JBS diodes outperforms closely rated Silicon PiN taking advantage wide-bandgap properties which leads to a high ionization activation energy given strong covalent bonds. Although diode structure favours reverse blocking voltage with small leakage current conduction, localise crowding caused by multiple P+ implanted region breakdown at lower load currents than diode. The...

This article mainly expounds the strategy of strong province in higher education under new situation and local colleges how to highlight schooling characteristics this explores scientist path universities servicing regional economic social development.It has practical guiding value establishing school running orientation, improving perfecting educational function, organizing implementing activities talent training teaching researching.It can enrich universities, develop related theory field...

With the development of educational ideas, practical puzzles emerged as a new cultural vehicle and mode education in recent times. Game teaching itself is full interest, interaction collaboration, which greatly benefits self-directed learning student interests. At same time, with deepening curriculum reform colleges universities, according to “Science, Technology, Engineering, Art, Mathematics” (STEAM) concept, puzzle games including board combined professional basic courses will give them...

The 4H-SiC vertical Merged-PiN-Schottky (MPS) diodes are attractive power devices with potentials to be used in high-power DC-DC converter high voltage ratings the range of 1.7 kV and operating temperatures, as an alternative Junction Barrier Schottky (JBS) diodes. This paper reveals dynamic switching performance static characteristics SiC MPS diode comparison Silicon PiN JBS through a wide experimental measurements. It shows superior due absence reverse recovery charge. However, it is shown...

The bias temperature instability (BTI) has been an issue for SiC MOSFET. device performance would vary with the induced threshold drift. In this paper, peak shoot-through current during crosstalk under impact BTI is investigated in regard to increase of stressing time and recovery symmetrical asymmetrical double-trench MOSFET as well planar comparison purpose. change voltage measured are compared shoot-through. measurement drift accelerated gate also conducted investigated.

A comprehensive range of surge current measurements and UIS tests have been conducted for Silicon PiN diodes, SiC JBS diodes MPS with temperatures ranging to up 175°C. The results show that the devices outperform in terms avalanche ruggedness, while diode can compete performance. These are validated by experimental their subsequent calculated energy.