A5033451155- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Photorefractive and Nonlinear Optics
- Nonlinear Photonic Systems
- Advanced Photonic Communication Systems
- Semiconductor Lasers and Optical Devices
- Radio Frequency Integrated Circuit Design
- Mechanical and Optical Resonators
- Laser-Matter Interactions and Applications
- Advanced Fiber Optic Sensors
- Gyrotron and Vacuum Electronics Research
- Nanowire Synthesis and Applications
- Nonlinear Waves and Solitons
- Quantum Mechanics and Non-Hermitian Physics
- Electrostatic Discharge in Electronics
- Photonic Crystal and Fiber Optics
- Optical and Acousto-Optic Technologies
- Optical Network Technologies
- Photonic Crystals and Applications
- Plasma Diagnostics and Applications
- Plasmonic and Surface Plasmon Research
- Particle accelerators and beam dynamics
École Polytechnique Fédérale de Lausanne
2020-2025
Harvard University
2022
nLIGHT (United States)
2022
Stanford University
2022
Abstract Early works 1 and recent advances in thin-film lithium niobate (LiNbO 3 ) on insulator have enabled low-loss photonic integrated circuits 2,3 , modulators with improved half-wave voltage 4,5 electro-optic frequency combs 6 on-chip devices, applications ranging from microwave photonics to microwave-to-optical quantum interfaces 7 . Although demonstrated tunable lasers based LiNbO (refs. 8,9 ), the full potential of this platform demonstrate frequency-agile, narrow-linewidth has not...
Thin-film lithium niobate has shown promise for scalable applications ranging from single-photon sources to high-bandwidth data communication systems. Realization of the next generation high-performance classical and quantum devices, however, requires much lower optical losses than current state art resonator (Q-factor ∼10 million). Yet material limitations ion-sliced thin film have not been explored; therefore, it is unclear how high quality factor can be achieved in this platform. Here,...
Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited bulk optics. Of particular interest for new are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but difficult process via dry etching. Here we demonstrate that diamond-like carbon (DLC) is superior material manufacturing of photonic based on ferroelectrics, specifically LiNbO3. Using DLC hard mask, fabrication deeply etched, tightly confining, low loss...
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence fully integrated LiNbO3 electro-optic devices. Yet date, photonic circuits mostly been fabricated using non-standard etching techniques partially etched waveguides, that lack reproducibility achieved silicon photonics. Widespread application requires a reliable solution with precise lithographic control. Here we demonstrate heterogeneously platform employing wafer-scale...
Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO
Monolayer transition-metal dichalcogenides with direct bandgaps are emerging candidates for optoelectronic devices, such as photodetectors, light-emitting diodes, and electro-optic modulators. Here we report a low-loss integrated platform incorporating molybdenum ditelluride monolayers silicon nitride photonic microresonators. We achieve microresonator quality factors >3 × 106 in the telecommunication O- to E-bands. This paves way low-loss, hybrid circuits layered semiconductors, not...
A photonic dimer composed of two evanescently coupled high- Q microresonators is a fundamental element multimode soliton lattices. It has demonstrated variety emergent nonlinear phenomena, including supermode generation and hopping. Here, we present another aspect dissipative in resonators, revealing the advantages this system over conventional single-resonator platforms. Namely, show that accessibility solitons markedly varies for symmetric antisymmetric families. Linear measurements reveal...
We demonstrate a hybrid LiNbO 3 -Si N 4 photonic integrated platform with propagation loss of 8.5 dB/m at wafer scale. The low insertion (4 dB) and precise lithographic control. also number applications the platform.
Photonic integrated circuits based on Lithium Niobate have demonstrated the vast capabilities afforded by material with a high Pockels coefficient, allowing linear and high-speed modulators operating at CMOS voltage levels for applications ranging from data-center communications photonic accelerators AI. However despite major progress, industrial adoption of this technology is compounded cost per wafer. Here we overcome challenge demonstrate platform that satisfies dichotomy scalable...
Optical amplification, crucial for modern communication, primarily relies on erbium-doped fiber amplifiers (EDFAs) to enhance signals without distortion. However, EDFAs only cover a portion of the low-loss spectrum optical fibers. parametric utilizing material nonlinearities, offers expanded capacity, but has faced limitations in gain and bandwidth. Addressing this, we present high-gain continuous-traveling-wave amplifier, surpassing erbium window. Leveraging gallium phosphide-on-insulator...
Photonic integrated circuits are indispensible for data transmission within modern datacenters and pervade into multiple application spheres traditionally limited bulk optics, such as LiDAR biosensing. Of particular interest ferroelectrics Lithium Niobate, which exhibit a large electro-optical Pockels effect enabling ultrafast efficient modulation, but difficult to process via dry etching . For this reason, tightly confining waveguides - routinely achieved in silicon or nitride has not been...
We present a LiNbO3 photonic platform that heterogeneously integrates thin-film with Si3N4 circuits via wafer-scale bonding. The achieves low propagation loss (<0.1 dB/cm) and efficient fiber-to-chip coupling (<2.5 dB per facet), enabling complex integrated components precise lithographic control.
We demonstrate integrated optical continuous-travelling-wave parametric amplifiers that significantly surpass the amplification bandwidth of traditional Erbium-Doped Fiber Amplifiers. Using a 5.55-cm-long gallium phosphide waveguide, we achieve up to 35 dB gain in small-signal regime, and more than 10 off-chip net wavelength window spanning approximately 140 nm centered at 1550 nm, with maximum value reaching 25 dB. This is, our knowledge, first demonstration such large broadband...
Integrated frequency comb generators based on Kerr parametric oscillation have led to chip-scale, gigahertz-spaced combs with new applications spanning hyperscale telecommunications, low-noise microwave synthesis, LiDAR, and astrophysical spectrometer calibration. Recent progress in lithium niobate (LN) photonic integrated circuits (PICs) has resulted chip-scale electro-optic (EO) combs, offering precise comb-line positioning simple operation without relying the formation of dissipative...
We demonstrate an integrated lithium tantalate electro-optic Mach-Zehnder modulator exhibiting the voltage-length product of 3.7 V·cm and bandwidth at least 67 GHz.
The continuous growth of global data traffic over the past three decades, along with advances in disaggregated computing architectures, presents significant challenges for optical transceivers communication networks and high-performance systems. Specifically, there is a growing need to significantly increase rates while reducing energy consumption cost. High-performance modulators based on materials such as InP, thin-film lithium niobate (), or plasmonics have been developed, excelling...
The continuous growth of global data traffic over the past three decades, along with advances in disaggregated computing architectures, presents significant challenges for optical transceivers communication networks and high-performance systems. Specifically, there is a growing need to significantly increase rates while reducing energy consumption cost. High-performance modulators based on materials such as InP, thin-film lithium niobate (LiNbO3), or plasmonics have been developed, LiNbO3...
Abstract Photonic integrated circuits are indispensable for data transmission within modern datacenters and pervade into multiple application spheres traditionally limited bulk optics, such as LiDAR biosensing 1 . New applications higher performance enabled by the diversification of optical waveguide materials past silicon-on-insulator. Of particular interest ferroelectrics Lithium Niobate, which exhibit a large electro-optical Pockels effect enabling ultrafast efficient modulation, but...
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence fully integrated LiNbO3 electro-optic devices, including low-voltage, high-speed modulators, frequency combs, microwave-optical transducers. Yet date, photonic circuits (PICs) mostly been fabricated using non-standard etching techniques that lack reproducibility routinely achieved silicon photonics. Widespread future application requires a reliable scalable solution standard...
We demonstrate the integration of a Si 3 N 4 Damascene photonic platform with thin-film lithium niobate on insulator (LNOI) via direct wafer bonding. This process enables fabrication hybrid X(2) -X (3) microresonators Q " 10 6 , as well integrated travelling wave EO modulators.