A5087361274- Photonic and Optical Devices
- Advanced Fiber Laser Technologies
- Semiconductor Lasers and Optical Devices
- Mechanical and Optical Resonators
- Photorefractive and Nonlinear Optics
- Advanced Fiber Optic Sensors
- Magneto-Optical Properties and Applications
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Solid State Laser Technologies
- Photonic Crystal and Fiber Optics
- Advanced Optical Sensing Technologies
- Diamond and Carbon-based Materials Research
- Advanced MEMS and NEMS Technologies
- Quantum, superfluid, helium dynamics
- Quantum Information and Cryptography
- Laser Design and Applications
- Cold Atom Physics and Bose-Einstein Condensates
- Acoustic Wave Resonator Technologies
- Neural Networks and Reservoir Computing
- Optical Coherence Tomography Applications
École Polytechnique Fédérale de Lausanne
2020-2024
Indian Institute of Technology Guwahati
2015
Abstract Early works 1 and recent advances in thin-film lithium niobate (LiNbO 3 ) on insulator have enabled low-loss photonic integrated circuits 2,3 , modulators with improved half-wave voltage 4,5 electro-optic frequency combs 6 on-chip devices, applications ranging from microwave photonics to microwave-to-optical quantum interfaces 7 . Although demonstrated tunable lasers based LiNbO (refs. 8,9 ), the full potential of this platform demonstrate frequency-agile, narrow-linewidth has not...
Frequency modulated continuous wave laser ranging (FMCW LiDAR) enables distance mapping with simultaneous position and velocity information, is immune to stray light, can achieve long range, operate in the eye-safe region of 1550 nm high sensitivity. Despite its advantages, it compounded by requirement both narrow linewidth low noise lasers that be precisely chirped. While integrated silicon-based lasers, compatible wafer scale manufacturing large volumes at cost, have experienced major...
Photonic integrated circuits have the potential to pervade into multiple applications traditionally limited bulk optics. Of particular interest for new are ferroelectrics such as Lithium Niobate, which exhibit a large Pockels effect, but difficult process via dry etching. Here we demonstrate that diamond-like carbon (DLC) is superior material manufacturing of photonic based on ferroelectrics, specifically LiNbO3. Using DLC hard mask, fabrication deeply etched, tightly confining, low loss...
The availability of thin-film lithium niobate on insulator (LNOI) and advances in processing have led to the emergence fully integrated LiNbO3 electro-optic devices. Yet date, photonic circuits mostly been fabricated using non-standard etching techniques partially etched waveguides, that lack reproducibility achieved silicon photonics. Widespread application requires a reliable solution with precise lithographic control. Here we demonstrate heterogeneously platform employing wafer-scale...
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in near-infrared spectral regime. Recent advances development low-loss nitride-based photonic integrated resonators have allowed to outperform bulk external diode fiber both frequency agility 1550 nm-telecommunication window. Here, we demonstrate for first time a hybrid laser composed gallium nitride (GaN) chip-based microresonator operating at record low wavelengths as 410 nm...
Recent advancements in ultra-low-loss silicon nitride (Si 3 N 4 )-based photonic integrated circuits have surpassed fiber lasers coherence and frequency agility. However, high manufacturing costs of DFB precise control requirements, as required for self-injection locking, hinder widespread adoption. Reflective semiconductor optical amplifiers (RSOAs) provide a cost-effective alternative solution but not yet achieved similar performance or agility, modulated continuous wave (FMCW) LiDAR,...
Chip-based, single-frequency and low phase-noise integrated photonic laser diodes emitting in the violet (412 nm) blue (461 regime are demonstrated. The GaN-based edge-emitting were coupled to high-quality on-chip micro-resonators for optical feedback mode selection resulting self-injection locking with narrow emission linewidth. Multiple group III-nitride (III-N) based circuit chips different waveguide designs including single-crystalline AlN, AlGaN, GaN developed characterized....
Abstract Coherent interconversion between microwave and optical frequencies can serve as both classical quantum interfaces for computing, communication, sensing. Here, we present a compact microwave-optical transducer based on monolithic integration of piezoelectric actuators silicon nitride photonic circuits. Such an actuator couples signals to high-overtone bulk acoustic resonator defined by the silica cladding waveguide core, suspended enhance electromechanical optomechanical couplings....
This work demonstrates the capabilities of an entangled photon-pair source at telecom wavelengths, based on a photonic integrated ${\mathrm{Si}}_{3}{\mathrm{N}}_{4}$ microresonator with monolithically piezoelectric frequency tuning. Previously, tuning photon pairs generated by microresonators has only been demonstrated using thermal control, however these have limited actuation bandwidth and are not compatible cryogenic environments. Here, frequency-tunable generation aluminium nitride layer...
We demonstrate a hybrid LiNbO 3 -Si N 4 photonic integrated platform with propagation loss of 8.5 dB/m at wafer scale. The low insertion (4 dB) and precise lithographic control. also number applications the platform.
We demonstrate hybrid integration of an RSOA with extended-distributed Bragg reflector (E-DBR) laser cavity implemented on a Si 3 N 4 chip monolithically in-tegrated piezoactuators. The exhibits intrinsic linewidth Hz frequency tuning over 1.0 GHz at up to 1 MHz triangular chirp rate.
Recent advances in the development of ultra-low loss silicon nitride integrated photonic circuits have heralded a new generation lasers capable reaching fiber laser coherence. However, these devices are presently based on self-injection locking distributed feedback diodes, increasing both cost and requiring tuning setpoints for their operation. In contrast, turn-key legacy systems use reflective semiconductor optical amplifiers (RSOAs). While this scheme has been utilized photonics-based...
Photonic integrated circuits are indispensible for data transmission within modern datacenters and pervade into multiple application spheres traditionally limited bulk optics, such as LiDAR biosensing. Of particular interest ferroelectrics Lithium Niobate, which exhibit a large electro-optical Pockels effect enabling ultrafast efficient modulation, but difficult to process via dry etching . For this reason, tightly confining waveguides - routinely achieved in silicon or nitride has not been...
Recent advances in the development of ultra-low loss silicon nitride (Si3N4)-based photonic integrated circuits have allowed lasers to achieve a coherence exceeding those fiber and enabled unprecedentedly fast (Megahertz bandwidth) tuning using monolithically piezoelectrical actuators. While this marks first time that laser is achieved circuits, conjunction with frequency agility exceeds legacy bulk lasers, approach presently compounded by high cost manufacturing DFB, as required for...
Recent advances in the development of ultra-low loss silicon nitride integrated photonic circuits have heralded a new generation lasers capable reaching fiber laser coherence. However, these devices presently are based on self-injection locking distributed feedback (DFB) diodes, increasing both cost and requiring tuning setpoints for their operation. In contrast, turn-key legacy systems use reflective semiconductor optical amplifiers (RSOA). While this scheme has been utilized...
We demonstrate a novel class of lasers, based on the hybrid integration an RSOA with extended-distributed Bragg reflector (E-DBR) laser cavity implemented Si 3 N 4 chip microheaters. This enables us to reach sub-kHz linewidth more than 30 mW output power and mode-hop free tuning range upto 62.4 GHz.
We present a LiNbO 3 integrated photonic platform with wafer-scale bonding to Si N 4 circuit. The exhibits < 0.1 dB/cm propagation loss and 2.5 dB/facet fiber-chip coupling loss. demonstrate phase shifters, frequency-agile lasers, optical splitters, other devices.
We demonstrate a hybrid photonic integrated laser that exhibit intrinsic linewidth of 40 Hz, while offering unsurpassed megahertz actuation bandwidth with the tuning range larger than 1 GHz, attained by DFB self-injection locking to high-Q Si 3 N 4 microres- onator AlN piezoelectrical actuator, allowing both single line operation and microcomb generation. develop compact FMCW LiDAR engine triangular chirp optical signals at rate up MHz, without requiring any linearisation.
Compact, single-frequency and low-noise integrated photonic laser diodes emitting in the violet (~412 nm) blue (461 regime are demonstrated. Hybrid-integration of III-Nitride edge-type to a butt-coupled on-chip high-Q resonator was used achieved ultra-low phase-noise operation with ~36 dB side-mode suppression ratio. Both CMOS-compatible PIC chip SiN core as well new class platform crystalline heterostructures developed evaluated. Successful demonstration self-injection locking ultra-narrow...
Arising from modulation instability, Turing rolls in optical Kerr microresonators have been used the generation of frequency combs and synthesis microwave terahertz frequencies. In this work, by applying electro-optic on terahertz-frequency rolls, we implement division with a microcomb to synthesize variable low-noise signals. We also actively stabilize oscillations reference via intracavity power modulation, obtaining fractional instabilities that are better than those free-running...
We demonstrate a process for hydrogen-free low-loss silicon oxide (SiO 2 ) films deposited using S iCl 4 and O as precursors. A wide window from 1260 nm to 1625 is achieved at deposition temperature of 300 ◦ C, essential next generation photonic integrated circuits.