Zheru Qiu

ORCID: 0000-0002-6465-026X
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Research Areas
  • Photonic and Optical Devices
  • Advanced Fiber Laser Technologies
  • Optical Network Technologies
  • Advanced Fiber Optic Sensors
  • Mechanical and Optical Resonators
  • Laser-Matter Interactions and Applications
  • Advanced Photonic Communication Systems
  • Photonic Crystal and Fiber Optics
  • Quantum optics and atomic interactions
  • Quantum Information and Cryptography
  • Semiconductor Lasers and Optical Devices
  • Cold Atom Physics and Bose-Einstein Condensates
  • Atomic and Subatomic Physics Research
  • Advanced Optical Sensing Technologies
  • Advanced Fluorescence Microscopy Techniques
  • Advanced Electron Microscopy Techniques and Applications
  • Laser Design and Applications
  • Solid State Laser Technologies
  • Silicon Nanostructures and Photoluminescence
  • Near-Field Optical Microscopy
  • Optical Wireless Communication Technologies
  • Photonic Crystals and Applications
  • Advanced MRI Techniques and Applications
  • Optical Coherence Tomography Applications
  • Optical Coatings and Gratings

École Polytechnique Fédérale de Lausanne
2022-2024

Hefei National Center for Physical Sciences at Nanoscale
2019-2020

University of Science and Technology of China
2019-2020

Erbium-doped fiber amplifiers revolutionized long-haul optical communications and laser technology. Erbium ions could provide a basis for efficient amplification in photonic integrated circuits but their use remains impractical as result of insufficient output power. We demonstrate circuit-based erbium amplifier reaching 145 milliwatts power more than 30 decibels small-signal gain-on par with commercial surpassing state-of-the-art III-V heterogeneously semiconductor amplifiers. apply ion...

10.1126/science.abo2631 article EN Science 2022-06-16

Advancing quantum information, communication and sensing relies on the generation control of correlations in complementary degrees freedom. Here, we demonstrate preparation electron-photon pair states using phase-matched interaction free electrons with evanescent vacuum field a photonic-chip-based optical microresonator. Spontaneous inelastic scattering produces intracavity photons coincident energy-shifted electrons. Harnessing these pairs for correlation-enhanced imaging, achieve...

10.1126/science.abo5037 article EN Science 2022-08-11

Abstract Multi-mode waveguides are ubiquitously used in integrated photonics. Although interaction among different spatial waveguide eigenmodes can induce novel nonlinear phenomena, mode is typically undesired. Adiabatic bends, such as Euler have been favoured to suppress interaction. Here, we adapt and optimize bends build compact racetrack microresonators based on ultralow-loss, multi-mode, silicon nitride photonic circuits. The feature a footprint of only 0.21 mm 2 for 19.8 GHz free...

10.1038/s42005-022-00851-0 article EN cc-by Communications Physics 2022-04-07

The short de Broglie wavelength and strong interaction empower free electrons to probe structures excitations in materials biomolecules. Recently, electron-photon interactions have enabled new optical manipulation schemes for electron beams. In this work, we demonstrate the of with nonlinear states inside a photonic chip–based microresonator. Optical parametric processes give rise spatiotemporal pattern formation corresponding coherent or incoherent frequency combs. We couple such...

10.1126/science.adk2489 article EN Science 2024-01-11

Abstract Chip-scale integration is a key enabler for the deployment of photonic technologies. Coherent laser ranging or FMCW LiDAR, perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range, immunity to interference. However, wafer-scale these systems has been challenged by stringent requirements on coherence, frequency agility, necessity optical amplifiers. Here, we demonstrate photonic-electronic LiDAR source composed...

10.1038/s41467-024-47478-z article EN cc-by Nature Communications 2024-04-11

Recent advancements in ultra-low-loss silicon nitride (Si 3 N 4 )-based photonic integrated circuits have surpassed fiber lasers coherence and frequency agility. However, high manufacturing costs of DFB precise control requirements, as required for self-injection locking, hinder widespread adoption. Reflective semiconductor optical amplifiers (RSOAs) provide a cost-effective alternative solution but not yet achieved similar performance or agility, modulated continuous wave (FMCW) LiDAR,...

10.1364/optica.524703 article EN cc-by Optica 2024-06-28

Silicon nitride (Si 3 N 4 ) photonic integrated circuits (PICs) offer significant advantages over traditional silicon photonics, including low loss and superior power handling at optical communication wavelength bands. To facilitate high-density integration effective nonlinearity, the use of thick, stoichiometric Si films is crucial. However, when using low-pressure chemical vapor deposition (LPCVD) to achieve high material transparency, exhibit large tensile stress on order GPa, leading...

10.1364/optica.529673 article EN cc-by Optica 2024-08-08

We report an all-optical atomic vector magnetometer using dual Bell-Bloom optical pumping beams in a Rb vapor cell. This consists of two orthogonal beams, with amplitude modulations at $^{85}\mathrm{Rb}$ and $^{87}\mathrm{Rb}$ Larmor frequencies, respectively. simultaneously detect signals excited by these single probe beam the third direction, extract field orientation information phase delays between modulated driving beams. By adding Herriott cavity inside cell, we improve sensitivity....

10.1103/physreva.101.053436 article EN Physical review. A/Physical review, A 2020-05-28

Erbium-doped fiber lasers exhibit high coherence and low noise as required for applications in optic sensing, gyroscopes, LiDAR, optical frequency metrology. Endowing Erbium-based gain photonic integrated circuits can provide a basis miniaturizing low-noise to chip-scale form factor, enable large-volume applications. Yet, while major progress has been made the last decade on based silicon photonics with III-V media, integration of Erbium chip compounded by large laser linewidth. Recent...

10.48550/arxiv.2305.03652 preprint EN cc-by arXiv (Cornell University) 2023-01-01

We present the integration of four individual erbium-doped waveguide optical amplifiers on a Si 3 N 4 photonic integrated circuit hybrid with four-lane semi-conductor pump laser diode chip. Each amplifier achieves 15 dB on-chip gain.

10.1364/ofc.2024.m4a.5 article EN Optical Fiber Communication Conference (OFC) 2022 2024-01-01

We demonstrate hybrid integration of an RSOA with extended-distributed Bragg reflector (E-DBR) laser cavity implemented on a Si 3 N 4 chip monolithically in-tegrated piezoactuators. The exhibits intrinsic linewidth Hz frequency tuning over 1.0 GHz at up to 1 MHz triangular chirp rate.

10.1364/ofc.2024.m1d.6 article EN Optical Fiber Communication Conference (OFC) 2022 2024-01-01

Silicon nitride (Si$_3$N$_4$) photonic integrated circuits (PICs) have shown low linear loss, negligible nonlinear and high power handling over traditional silicon photonics. To achieve high-density integration effective nonlinearity through tight optical confinement, thick stoichiometric Si$_3$N$_4$ films are indispensable. However, when using low-pressure chemical vapor deposition (LPCVD) to material transparency, exhibit large tensile stress on the order of GPa. Methods for crack...

10.48550/arxiv.2406.14296 preprint EN arXiv (Cornell University) 2024-06-20

We study the interactions between oscillating nonresonant rf fields and atoms with strong spin-exchange collisions in presence of a weak dc magnetic field. find that atomic Larmor precession frequency shows new functional form to field parameters when collision rate is tuned. In amplitude regime, modification appears comparable frequency. This effect has been neglected before due its narrow observation window. compare experimental results density matrix calculations, explain data by an...

10.1103/physreva.99.053417 article EN Physical review. A/Physical review, A 2019-05-20

We implement Euler bends to build compact high- Q Si 3 N 4 racetrack microresonators, featuring a small footprint of only 0.21 mm 2 for 19.8 GHz free spectral range. demonstrate that these multi-mode microresonators can be operated in the single-mode regime and generate single soliton microcomb.

10.1364/cleo_si.2022.sf1c.2 article EN Conference on Lasers and Electro-Optics 2022-01-01

Recent advances in the development of ultra-low loss silicon nitride (Si3N4)-based photonic integrated circuits have allowed lasers to achieve a coherence exceeding those fiber and enabled unprecedentedly fast (Megahertz bandwidth) tuning using monolithically piezoelectrical actuators. While this marks first time that laser is achieved circuits, conjunction with frequency agility exceeds legacy bulk lasers, approach presently compounded by high cost manufacturing DFB, as required for...

10.48550/arxiv.2306.03184 preprint EN cc-by arXiv (Cornell University) 2023-01-01

We demonstrate a novel class of lasers, based on the hybrid integration an RSOA with extended-distributed Bragg reflector (E-DBR) laser cavity implemented Si 3 N 4 chip microheaters. This enables us to reach sub-kHz linewidth more than 30 mW output power and mode-hop free tuning range upto 62.4 GHz.

10.1364/cleo_si.2023.stu3p.3 article EN 2023-01-01

The invention of erbium-doped fiber amplifiers (EDFAs) [1] evolutionized long-haul fiber-based optical communications. Erbium have a number unique properties highly suitable for communications, such as the broadband gain covering communication bands around 1550 nm, long ms-lifetime parity forbidden intra-4-f shell transition that leads to slow dynamics and negligible inter-channel crosstalk, high temperature stability, low noise figure. Rare-earth ion doping can equally provide basis compact...

10.1109/cleo/europe-eqec57999.2023.10232783 article EN 2023-06-26

The advances in novel low-loss "on insulator" integrated photonics platforms beyond silicon, such as thin-film LiNbO3, LiTaO3, GaP and BaTiO3 have demonstrated major potential across a wide range of applications, due to their unique electro-optical or nonlinear optical properties. This has heralded devices, ranging from low-voltage high-speed modulators parametric amplifiers. For photonic circuits, SiO2 cladding layer is key element, serving passivation for the waveguides enabling efficient...

10.48550/arxiv.2312.07203 preprint EN other-oa arXiv (Cornell University) 2023-01-01

Nonlinear photonics based on integrated circuits has enabled applications such as parametric amplifiers, soliton frequency combs, supercontinua, and non-reciprocal devices. Ultralow optical loss the capability for dispersion engineering are essential, which necessitate use of multi-mode waveguides. Despite that rich interaction among different spatial waveguide eigenmodes can give rise to novel nonlinear phenomena, mode is typically undesired it increases loss, perturbs local profile,...

10.48550/arxiv.2109.06764 preprint EN cc-by arXiv (Cornell University) 2021-01-01

We review our recent experiment on the Terabit-class coherent optical communication using a photonics integrated circuit-based amplifier. The 25.6-Tb/s 16-channel wavelength-division multiplexed (WDM) transmission (over 81-km fiber) proved potential of such on-chip amplification for future applications.

10.1117/12.3009992 article EN 2024-03-08

Microwaves generated by optical techniques have demonstrated unprecedentedly low noise and hold significance in various applications such as communication, radar, instrumentation, metrology. To date, the purest microwave signals are using frequency division with femtosecond mode-locked lasers. However, many laser combs a radio (RF) repetition rate hundreds of megahertz range, necessitating methods to translate low-noise RF signal domain. Benchtop pulse interleavers can multiply rate, avoid...

10.48550/arxiv.2404.14242 preprint EN arXiv (Cornell University) 2024-04-22

We demonstrate ultra-low propagation loss, lithographic precision, and wafer-scale manufacturing for high-density Si 3 N 4 photonic integrated circuits using an efficient DUV-based subtractive approach. show a loss as low 1.4 dB/m at 1.55 µ m.

10.1364/ofc.2024.tu2b.3 article EN Optical Fiber Communication Conference (OFC) 2022 2024-01-01

We demonstrate a process for hydrogen-free low-loss silicon oxide (SiO 2 ) films deposited using S iCl 4 and O as precursors. A wide window from 1260 nm to 1625 is achieved at deposition temperature of 300 ◦ C, essential next generation photonic integrated circuits.

10.1364/ofc.2024.th3h.5 article EN Optical Fiber Communication Conference (OFC) 2022 2024-01-01
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