A5046656665- Carbon Nanotubes in Composites
- Advanced Sensor and Energy Harvesting Materials
- Thin-Film Transistor Technologies
- Conducting polymers and applications
- Nanowire Synthesis and Applications
- Diamond and Carbon-based Materials Research
- Tribology and Lubrication Engineering
- Gear and Bearing Dynamics Analysis
- Graphene research and applications
- Ultrasonics and Acoustic Wave Propagation
- Mechanical and Optical Resonators
- Neuroscience and Neural Engineering
- CCD and CMOS Imaging Sensors
- Heat Transfer Mechanisms
- Internet of Things and AI
- Multiferroics and related materials
- Radiation Effects in Electronics
- Transition Metal Oxide Nanomaterials
- Electric Vehicles and Infrastructure
- Engineering Applied Research
- Aerodynamics and Acoustics in Jet Flows
- Microwave Imaging and Scattering Analysis
- Strong Light-Matter Interactions
- Cryptographic Implementations and Security
- Chaos-based Image/Signal Encryption
Beijing University of Posts and Telecommunications
2024-2025
Inria Rennes - Bretagne Atlantique Research Centre
2024
China Coal Technology and Engineering Group Corp (China)
2023
Peking University
2012-2022
University of Coimbra
2018
Qingdao University of Technology
2011
Abstract Flexible and stretchable electronic (FSE) transistors create various novel applications. Carbon nanotubes possess high intrinsic mobility exceptional mechanical optical characteristics, which lead to a great potential as channel electrodes in FSE transistors. At the same time, gate dielectric is also required be intrinsically flexible/stretchable integratable. However, few high‐performance solutions have been reported. By adopting polyvinyl alcohol (PVA)/SiO 2 hybrid layer...
Cm = mass flow rate ratio of minijets to main jet d diameter dr minijet injection pinhole Eu power spectral density function u f0 frequency predominant quasi-periodical vortices in f fd=Ue K centerline velocity decay R radial distance contraction from nozzle axis Re exit Reynolds number, defined by Ued= Req RHRV 1=2 RH mean-velocity half-width x; z plane RV y St Strouhal f0d=Ue hot-wire signal Uc local mean on Ue bulk Ue;c at x, y, coordinates x0 streamwise position virtual origin U1 Ux 5d U2 15d 20d
Low dimensional materials (LDMs) have drawn world-wide attention as potential candidates applied in flexible and wearable electronics. It is an attractive research topic to systematically integrate all-LDMs realize However, it difficult pattern LDMs by conventional photolithography plasma etching without harming the other overlapped analogous components. Here, we propose independent-operation all-LDM transistors integrated into a 2-inch substrate using proposed incorporated filtration (PIF)...
In this letter, we propose a novel activation treatment using supercritical CO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> fluid (SCCO ) to improve the comprehensive performance of all-carbon-nanotube thin-film transistors (TFTs) at low temperature. After treatment, subthreshold swing, threshold voltage, and leakage current devices are decreased. Meanwhile, mobility on/off ratio device improved significantly. We verify passivation...
Structural parameters are important factors that affect the dynamic performance of electrical spindle high-speed grinder. In this study, influences electric spindle's major structural on its characteristics investigated. Based transfer-matrix method and taking into consideration gyroscopic couple, shear, variable cross-section, other influential factors, a model is established for multidisk rotor rotor-bearing system spindle. The critical speeds first three orders, modes variation,...
In recent years, stretchable electronics have attracted great attention because of their broad application prospects such as in the field wearable electronics, skin-like medical transplantation and human-machine interaction. Intrinsically transistors advantages many aspects. However, integration intrinsically layers to achieve is still challenging. this work, we combine excellent electrical mechanical properties carbon nanotubes with dielectric styrene-ethylene-butylene-styrene (SEBS)...
Abstract Flexible electronics draw intense interest because of their promising potential for emerging applications, which, however, encounter challenging obstacles material self‐limiting fabrication, trade‐off mechanical flexibility, and associated moderate electrical performance. Here, wafer‐level flexible fully‐carbon‐integrated transistors via mixed‐dimensional van der Waals (vdW) engineering is realized. Remarkable performance includes subthreshold swing 51.8 mV dec −1 breaking...
Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with high mobility are highly desirable to achieve high-speed operation in active-matrix displays and large-area sensors. Only a few works provide potential solutions. In this letter, we have embedded carbon nanotubes (CNTs) into sputtered a-IGZO film form a-IGZO/CNT/a-IGZO (ACA) sandwiched channel. the ACA channel, CNT percolation networks connected by work as carrier paths enable faster transport of carriers during...
Well-aligned Carbon nanotube (CNT) arrays are expected by flexible and stretchable devices. In this paper, an asymmetric Langmuir-Blodgett (LB) method inorganic hydrophilization have been proposed, with which well-aligned CNT on soft substrates like polyethylene naphthalate, polyimide polydimethylsiloxane realized. After depositing 50 nm SiO2 for hydrophilization, the water contact angle has significantly reduced different substrates. The surface roughness flexibility also characterized to...
All-carbon-nanotube thin-film transistors (ACNT-TFTs) are proposed and fabricated on a transparent glass substrate by facile solution-processed method, with 95% enriched semiconducting single-walled carbon nanotubes (SWCNTs) serving as channel materials mixed SWCNTs source/drain/gate electrodes. The device demonstrates excellent electronic properties an on/off current ratio over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> ,...
Transparent top-gate aligned-channel all-carbon-nanotube thin film transistors (all-CNT-TFTs) are proposed and integrated on a polyethylene naphthalate substrate, with 99.9%-purity semiconducting carbon nanotubes (SCNTs) as channel metallic (MCNTs) source/drain/gate electrodes. Fabricated by Langmuir-Blodgett (LB) method, an all-CNT-TFT on/off current ratio of 3.89×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> , well transparency...
By adopting polyvinyl alcohol/SiO2 hybrid layer as dielectric and carbon nanotubes channel source/drain/gate, high-performance flexible stretchable thin-film transistors are realized by Min Zhang co-workers in article number 1901133 using only traditional photolithography-etching low-temperature solution processing. The fabricated devices could push many soft application scenarios a step forward.
A concept of tuning the on-current for p-type carbon nanotube thin film transistors (CNT TFTs) by SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> passivation layer has been proposed, which meets different current density requirement macroelectronic applications. The adsorbed oxygen molecules shift fermi level down towards valence band, decreases barrier height between CNTs and electrodes holes, so that an as-made CNT TFT with...