The spin-splitter effect is theoretically predicted to generate an unconventional spin current with x- and z- polarization via the spin-split band in antiferromagnets. generated torque, namely, effective for manipulation of magnetization adjacent magnetic layer without external field spintronic devices such as MRAM. Here, we study generation torque collinear antiferromagnetic RuO_{2} (100), (101), (001) crystal planes. Next find all x-, y-, z-polarized currents depending on Néel vector...

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state suppressed relaxation is expected if the strengths of Rashba and Dresselhaus SOI terms, $\ensuremath{\alpha}$ $\ensuremath{\beta}$, are equal. Here we demonstrate gate control detection PSH in two-dimensional electron systems strong including terms cubic momentum. We consider strain-free InGaAs/InAlAs quantum wells first determine ratio $\ensuremath{\alpha}/\ensuremath{\beta}\ensuremath{\simeq}1$...

The coercivity (Hc) of a perpendicularly magnetized FePt layer was modulated by applying the voltage (Vapp) to Hall device through MgO and Al–O insulating layers. A change in ∼40 Oe Hc observed changing Vapp from −13 13 V. From quantitative analysis effect on Hc, anisotropy energy application evaluated be 18.6 fJ/V m, which same order as theoretical prediction. role for also discussed.

We present the transfer of spatially variant polarization topologically structured light to spatial spin texture in a semiconductor quantum well. The electron texture, which is circular pattern with repeating spin-up and spin-down states whose repetition rate determined by topological charge, directly excited vector vortex beam helicity structure. generated efficiently evolves into helical wave owing spin-orbit effective magnetic fields persistent helix state controlling number mode. By...

We demonstrate electrical electron spin injection via interband tunneling in ferromagnetic/nonmagnetic semiconductor Esaki diodes. An tunnel junction between ferromagnetic p + -(Ga,Mn)As and nonmagnetic n -GaAs under reverse-bias allows spin-polarized of electrons from the valence band (Ga, Mn)As to conduction -GaAs. The polarization tunneled is probed by circular electroluminescence (EL) an n-GaAs/InGaAs/p-GaAs light emitting structure integrated with diode. Clear hysteresis loop ±6.5%...

We propose a method to determine the relative strength of Rashba and Dresselhaus spin-orbit interaction from transport measurements without need fitting parameters. To this end, we make use conductance anisotropy in narrow quantum wires with respect directions an in-plane magnetic field, wire, crystal orientation. support our proposal by numerical calculations based on Landauer formalism which show applicability wide range

The demonstration of quantized spin splitting by Stern and Gerlach is one the most important experiments in modern physics. Their discovery was precursor recent developments spin-based technologies. Although electrical separation charged particles fundamental spintronics, non-uniform magnetic fields it has been difficult to separate states due Lorentz force, as well insufficient uncontrollable field gradients. Here we demonstrate electronic a semiconductor nanostructure. To avoid which...

A geometric phase of electron spin is studied in arrays InAlAs/InGaAs two-dimensional gas rings. By increasing the radius rings, time-reversal symmetric Aharonov-Casher oscillations electrical resistance are shifted towards weaker spin-orbit interaction regions with their shortened period. We conclude that shift due to a modulation phase, maximum which approximately 1.5 rad. further show various collapse onto universal curve if and strength Rashba taken into account. The result interpreted...

In order to utilize the spin degree of freedom in semiconductors, control states and transfer information are fundamental requirements for future spintronic devices quantum computing. Spin orbit (SO) interaction generates an effective magnetic field moving electrons enables generation, manipulation detection without using external materials. However, relaxation also takes place due a momentum dependent SO-induced field. As result, SO is considered be double-edged sword facilitating but...

The spin relaxation mechanism in single-crystalline and polycrystalline platinum (Pt) thin films is revealed by a quantum interference effect. Examining the relationship between rate momentum scattering changing Pt thickness, we find that of strongly depends on both crystal structure thickness even though quality material unchanged. In particular, D'yakonov-Perel' considered as dominant under cases where events are suppressed or interface effect not negligible.

We demonstrate a quantitative disentanglement of current-induced spin-orbit torques (SOTs) in $\mathrm{Pt}$/$\mathrm{Co}$ bilayers, where both the spin Hall effect (SHE) and Rashba-Edelstein (REE) are present. The SOTs originating from SHE bulk $\mathrm{Pt}$ REE at substrate (sub.)/$\mathrm{Pt}$ interfaces successfully disentangled quantified utilizing harmonic measurements, by taking advantage different characteristic lengths between two effects during spin-current transport. fieldlike (FL)...

Abstract Most future information processing techniques using electron spins in non-magnetic semiconductors will require both the manipulation and transfer of without their coherence being lost. The spin–orbit effective magnetic field induced by drifting electrons enables us to rotate absence an external field. However, fluctuations originating from random scattering also cause undesirable spin decoherence, which limits length scale transport. Here we demonstrate drift transport adjusted a...

We investigated the spin lifetime in gate-fitted InGaAs narrow wires from magnetotransport measurement. Applying positive gate bias voltage, lifetimes became more than one order longer those obtained a Hall bar sample with two-dimensional electron gas. This enhancement of gated is first experimental evidence dimensional confinement and resonant spin-orbit interaction effect controlled by voltage. Spin relaxation due to cubic Dresselhaus term negligible present wires.

Magneto-optic Kerr microscopy was employed to investigate the spin-orbit interactions of electrons traveling in semiconductor quantum wells using surface acoustic waves (SAWs). Two-dimensional images spin flow induced by SAWs exhibit anisotropic precession behaviors caused coexistence different types interactions. The dependence effective magnetic fields on SAW intensity indicates existence acoustically controllable resulting from strain and Rashba contributions SAWs.

We investigate the substrate annealing effect of thermoelectric voltage induced by spin-Seebeck in Pt/polycrystalline yttrium iron garnet Y3Fe5O12 (YIG) structures with different Pt thicknesses. The is increased decreasing thickness to 1.9 nm as well annealing. Annealing at 1073 K for 5 h enhances up 7.4 µV/K thickness.

Abstract The magnetic anisotropy of the Pt/Co system under ionic liquid gating was studied. A comparison results obtained using samples and those subjected to mild oxidization by oxygen plasma ashing suggested that anodic Co layer could be one causes large modulation observed in anisotropy. However, charge accumulation effect probably dominant when on cathode side. experiments presented here are expected aid elucidating mechanism which electric fields affect magnetism.

Magnetoconductance (MC) at low temperature was measured to investigate spin-related transport affected by spin-orbit interaction (SOI) in III-VI compound $n$-type GaSe thin films. Results reveal that MC shows weak antilocalization (WAL). Its and gate voltage dependences the dominant spin relaxation is governed D'yakonov-Perel' mechanism associated with Rashba SOI. The estimated SOI strength much stronger than of III-V GaAs quantum wells, although energy gap split-off band closely resemble...

Space- and time-resolved measurements of spin drift diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward is compensated by backward diffusion, we find precession frequency in absence an external magnetic field. The depends linearly the velocity explained cubic Dresselhaus spin-orbit interaction, for which leads to angle twice that diffuse same distance.

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Yoji Kunihashi, Makoto Kohda, Haruki Sanada, Hideki Gotoh, Tetsuomi Sogawa, Junsaku Nitta; Proposal of spin complementary field effect transistor. Appl. Phys. Lett. 12 March 2012; 100 (11): 113502. https://doi.org/10.1063/1.3689753 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley...

When an electric current passes across a potential barrier, the partition process of electrons at barrier gives rise to shot noise, reflecting discrete nature charge. Here we report observation excess noise connected with spin which is induced by nonequilibrium accumulation in all-semiconductor lateral spin-valve device. We find that this proportional current. Additionally, determine quantitatively spin-injection-induced electron temperature measuring noise. Our experiments show driven...

We demonstrate gate-controlled switching between persistent spin helix (PSH) state and inverse PSH state, which are detected by quantum interference effect on magneto-conductance. These special symmetric states showing weak localization give rise to a long coherence when the strength of Rashba spin-orbit interaction (SOI) is close that Dresselhaus SOI. Furthermore, in middle two states, where SOI can be negligible, bulk parameter modulation doped InGaAs/InAlAs well determined.

We study the role of Pt crystal orientation in spin-orbit torques Co/Pt bilayers by means harmonic Hall effect and current-induced switching measurements. Perpendicularly magnetized were fabricated with layer exhibiting either a polycrystalline grain structure or an epitaxial (111)-oriented film on MgO substrates magnetron sputtering. find that damping-like torque is 1.3 times smaller Co/Pt(111) compared to films, whereas field-like values are comparable magnitude. Current-induced...