A5101464344- 2D Materials and Applications
- Advanced Memory and Neural Computing
- MXene and MAX Phase Materials
- Graphene research and applications
- Ferroelectric and Negative Capacitance Devices
- Transition Metal Oxide Nanomaterials
- Thin-Film Transistor Technologies
- Nanowire Synthesis and Applications
- Gas Sensing Nanomaterials and Sensors
- Perovskite Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and devices
- Analytical Chemistry and Sensors
- ZnO doping and properties
- Neuroscience and Neural Engineering
- Conducting polymers and applications
- Semiconductor materials and interfaces
- Liquid Crystal Research Advancements
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Photonic and Optical Devices
- TiO2 Photocatalysis and Solar Cells
- Semiconductor Quantum Structures and Devices
- Electric Motor Design and Analysis
- Advanced Semiconductor Detectors and Materials
Korea Institute of Materials Science
2016-2024
Government of the Republic of Korea
2020
Tianjin University
2019-2020
Changwon National University
2020
Korea Advanced Institute of Science and Technology
2019
Yonsei University
2019
Gwangju Institute of Science and Technology
2013-2017
Kyungpook National University
2011
Abstract A highly flexible and transparent transistor is developed based on an exfoliated MoS 2 channel CVD‐grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), current on/off ratio (>10 4 ) with average field effect mobility of ∼4.7 cm V −1 s , all which cannot be achieved by other transistors consisting active channel/metal electrodes or channel/graphene In particular, low Schottky barrier (∼22...
Here, we report that Nb doping of two-dimensional (2D) MoSe2 layered nanomaterials is a promising approach to improve their gas sensing performance. In this study, atoms were incorporated into 2D host matrix, and the concentration could be precisely controlled by varying number Nb2O5 deposition cycles in plasma enhanced atomic layer process. At relatively low dopant concentrations, showed device durability as well NO2 response, attributed its small grains stabilized grain boundaries....
A highly flexible and transparent transistor based on an exfoliated MoS2 channel CVD-grown graphene electrodes is reported by W.-K. Hong, H. C. Ko, co-workers page 3295. Introducing 2D nanomaterials provides high mechanical flexibility (available bending radius: ± 2.2 mm), optical transmittance (74%), current on/off ratio (>104) with average field effect mobility of ≈4.7 cm2 V−1 s−1, all which cannot be achieved other transistors consisting a active channel/metal or channel/graphene...
Flexible and rollable MoS<sub>2</sub>/Si photodetector reveals excellent high flexibility, rollability as well durability under harsh bending conditions.
Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition interfacial transition region between semiconducting WSe2 layer channels metallic NbSe2 contact can be engineered through doping with Nb atoms. WxNb1-xSe2 regions considerably lower potential barrier height junction, significantly improving performance corresponding WSe2-based field-effect transistor...
Abstract 2D layered materials with sensitive surfaces are promising for use in chemical sensing devices, owing to their extremely large surface‐to‐volume ratios. However, most sensors based on used the form of laterally defined active channels, which area is limited actual device dimensions. Therefore, a novel approach fabricating self‐formed active‐channel devices proposed semiconductor very surface areas, and potential gas ability examined. First, vertical growth phenomenon SnS 2...
The long-term stability and superior device reliability through the use of delicately designed metal contacts with two-dimensional (2D) atomic-scale semiconductors are considered one critical issues related to practical 2D-based electronic components. Here, we investigate origin improved contact properties alloyed 2D metal–semiconductor heterojunctions. WSe2-based transistors mixed transition layers containing van der Waals (M–vdW, NbSe2/WxNb1–xSe2/WSe2) junctions realize atomically sharp...
Abstract Artificial synapses based on 2D MoS 2 memtransistors have recently attracted considerable attention as a promising device architecture for complex neuromorphic systems. However, previous memtransistor devices occasionally cause uncontrollable analog switching and unreliable synaptic plasticity due to random variations in the field‐induced defect migration. Herein, highly reliable /Nb O 5 heterostructure is demonstrated, which Nb interlayer thickness critical material parameter...
Wearable electronic devices with next-generation biocompatible, mechanical, ultraflexible, and portable sensors are a fast-growing technology. Hardware systems enabling artificial neural networks while consuming low power processing massive in situ personal data essential for adaptive wearable neuromorphic edging computing. Herein, the development of an ultraflexible artificial-synaptic array device concrete-mechanical cyclic endurance consisting novel heterostructure all-solid-state 2D MoS2...
Abstract 2D molybdenum disulfide (MoS 2 ) possesses excellent optoelectronic properties that make it a promising candidate for use in high‐performance photodetectors. Yet, to meet the growing demand practical and reliable MoS photodetectors, critical issue of defect introduction interface between exfoliated electrode metal during fabrication must be addressed, because defects deteriorate device performance. To achieve this objective, an atomic layer‐deposited TiO interlayer (between...
We investigated chemical vapor-deposited (CVD) two-dimensional (2D) niobium diselenide (NbSe2) material for the resistive switching and synaptic characteristics. Three different atomic switch devices with Ag/HfO2/Pt, Ag/Ti/HfO2/Pt, Ag/NbSe2/HfO2/Pt were studied as both memory neuromorphic devices. Both inserted Ti NbSe2 buffer layers effectively control stochastic Ag-ion diffusion, leading to suppressed variation of characteristics, which is a critical issue in an device. Especially, device...
Abstract Flexible and transparent thin-film silicon solar cells were fabricated optimized for building-integrated photovoltaics bifacial operation. A laser lift-off method was developed to avoid thermal damage during the transfer of light-scattering structures onto colorless polyimide substrates thus enhance front-incidence photocurrent, while a dual n-type rear window layer introduced reduce optical losses, facilitate electron transport incidence, performance The introduction increased...
This study experimentally and theoretically investigated the characteristics of transition voltage spectroscopy (TVS) with different asymmetric coupling in molecular junctions that were formed by several alkyl- oligoacene-based molecules. On basis analysis a statistically significant number device data (a total ∼300 devices ∼880 TVS data), we confirmed minimum point appearing Fowler–Nordheim (F–N) plot current–voltage depended linearly on energy offset between Fermi electrodes...
Molybdenum disulfide with atomic-scale flatness has application potential in high-speed and low-power logic devices owing to its scalability intrinsic high mobility. However, realize viable technologies based on two-dimensional materials, techniques that enable their large-area growth quality uniformity wafer cale is a prerequisite. Here, we provide route toward highly uniform of wafer-scale, four-layered MoS2 film 2 in. substrate via sequential process consisting the deposition molybdenum...
Abstract Ion‐based electrochemical random‐access memory (ECRAM) is proposed for synaptic applications owing to its promising characteristics that have the potential accelerate data processing through neuromorphic systems. However, attaining ideal functionalities and constructing high‐density vertical synapse arrays are challenging due issues related uncontrolled ion migration constraints in 3D multi‐stacking. Here, a breakthrough using stackable Li ion‐based vertical‐sensing ECRAM (VS‐ECRAM)...
High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field-effect transistors (FETs). Unipolar behavior reduced achieved for tungsten disulfide (WS2) FETs by using a TiO2 interfacial layer inserted between WS2 layer. As service to our authors readers, this journal provides supporting information supplied the authors. Such materials peer reviewed may be re-organized online delivery, but not copy-edited or...
The transition metal dichalcogenides (TMDCs) have been extensively investigated for various applications such as logic, memory and optical devices, sensors. pressing challenge in the research of TMDCs is electrical performance limited by high contact resistance. We report more than 5000 times reduction resistance WS2 field-effect transistor (FET) with Ti (81 MΩ μm to 14.6 kΩ μm) high-pressure hydrogen annealing. Schottky barrier height appears play a major role This process can be used...
Abstract Due to the increased world‐wide threat health from air pollution, as well need for personalized diagnostic and physiological monitoring of exhaled breath, flexible gas sensor nodes have become an emerging area critical importance wearable electronics applicable. In this study, WO 3−δ films are prepared on substrates at room temperature using a single‐step, solid‐state deposition, granule spray in vacuum (GSV) process. The GSV‐WO successfully utilized fabricate ultrasensitive sensor....
High-precision artificial synaptic devices compatible with existing CMOS technology are essential for realizing robust neuromorphic hardware systems reliable parallel analogue computation beyond the von Neumann serial digital computing architecture. However, critical issues related to reliability and variability, such as nonlinearity asymmetric weight updates, have been great challenges in implementation of practical systems. Herein, a three-terminal two-dimensional (2D) MoS2 device combined...