A5035837243- Graphene research and applications
- 2D Materials and Applications
- Nanowire Synthesis and Applications
- Carbon Nanotubes in Composites
- Advancements in Semiconductor Devices and Circuit Design
- Molecular Junctions and Nanostructures
- Advanced biosensing and bioanalysis techniques
- Semiconductor materials and devices
- Radio Frequency Integrated Circuit Design
- Magnetic Field Sensors Techniques
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
- Optical Network Technologies
- Diamond and Carbon-based Materials Research
- Electrochemical sensors and biosensors
- MXene and MAX Phase Materials
- Conducting polymers and applications
- Gas Sensing Nanomaterials and Sensors
- Advanced Memory and Neural Computing
- Electrochemical Analysis and Applications
- Energy Harvesting in Wireless Networks
- graph theory and CDMA systems
- Graphene and Nanomaterials Applications
- ZnO doping and properties
- Photonic and Optical Devices
Dezhou University
2022-2025
AMO (Germany)
2016-2025
Northeast Agricultural University
2025
Guangdong University of Petrochemical Technology
2025
Huazhong University of Science and Technology
2024
China Academy of Space Technology
2013-2024
Xi'an Jiaotong University
2013-2024
State Key Laboratory of Electrical Insulation and Power Equipment
2024
Union Hospital
2024
RWTH Aachen University
2024
Large single-crystal graphene is highly desired and important for the applications of in electronics, as grain boundaries between grains markedly degrade its quality properties. Here we report growth millimetre-sized hexagonal films joined from such on Pt by ambient-pressure chemical vapour deposition. We a bubbling method to transfer these single arbitrary substrate, which nondestructive not only graphene, but also substrates. The substrates can be repeatedly used growth. shows high crystal...
Although transition metal dichalcogenides such as MoS2 have been recognized highly potent two-dimensional nanomaterials, general methods to chemically functionalize them are scarce. Herein, we demonstrate a functionalization route that results in organic groups bonded the surface via covalent C–S bonds. This is based on lithium intercalation, chemical exfoliation and subsequent quenching of negative charges residing by electrophiles diazonium salts. Typical degrees 10–20 atom % potentially...
Abstract Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume on wafer level. Here, we report generic methodology for large-area integration 2D by adhesive bonding. Our approach avoids manual handling and uses equipment, processes, that readily available large-scale lines. We demonstrate the transfer CVD graphene...
Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating the interact with defects in surrounding insulators. In field-effect transistors, resulting trapped charges can lead to large hysteresis and device drifts, particularly when common amorphous gate oxides (such as silicon or hafnium dioxide) are used, hindering stable circuit operation. Here, we show that graphene-based transistors be improved by Fermi-level...
While it has been shown that scandium (Sc) can be used for making high-quality Ohmic contact to the conduction band of a carbon nanotube (CNT) and thus fabricating high-performance n-type CNT field effect transistors (FETs), cost metal Sc is currently five times more expensive than gold one thousand yttrium (Y) which in many ways resembles Sc. In this Letter we show near perfect contacts fabricated on single-walled CNTs (SWCNTs) using Y, Y-contacted FETs outperform Sc-contacted important...
High-quality yttrium oxide (Y(2)O(3)) is investigated as an ideal high-kappa gate dielectric for carbon-based electronics through a simple and cheap process. Utilizing the excellent wetting behavior of on sp(2) carbon framework, ultrathin (about few nm) uniform Y(2)O(3) layers have been directly grown surfaces nanotube (CNT) graphene without using noncovalent functionalization or introducing large structural distortion damage. A top-gate CNT field-effect transistor (FET) adopting 5 nm layer...
A high-quality Y2O3 dielectric layer has been grown directly on graphene and used to fabricated top-gate field-effect transistors (FETs), the thickness of reduced continuously down 3.9 nm with an equivalent oxide (EOT) 1.5 excellent insulativity. By measuring CV characteristics two FETs different gate thicknesses, capacitance quantum are retrieved from experimental data without introducing any additional fitting process parameters, yielding a relative constant κ = 10 for about 2.28 μF/cm2....
A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of gate efficiency low parasitic capacitance device geometry, gain doubler increased about ten times compared to that back-gate G-FET based device. The response also pushed from 10 kHz 200 kHz, at which most output power concentrated doubled fundamental 400 kHz.
The efficient and reliable monitoring of acetic acid (CH3COOH) is significant to environmental protection human healthcare. LaFeO3 a potential sensing material for CH3COOH with its good sensitivity high plasticity. To further improve the properties meet requirements applications, we successfully utilized facile electrospinning technique fabricate series CH3COOH-sensitive Ag-doped (0–5 mol%) nanotubes. systematic characterization shows that appropriate content (4 Ag doping can effectively...
Abstract The commercialization of electronic devices based on graphene has not yet been successful, even 20 years after its first isolation. To this end, the European Commission is supporting research toward establishing a experimental pilot line for and optoelectronic related two-dimensional (2D) materials, namely Experimental Pilot Line (2D-EPL) project. Here, we report results obtained during third multi-project wafer (MPW) runs completed at end 2022 (MPW run 1) 2023 3) as an outcome...
Filling in the gap: Label-free, real-time electrical detection of proteins is achieved with high selectivity and real single-molecule sensitivity by using aptamer-functionalized molecular electronic devices single-walled carbon nanotubes as point contacts. Detailed facts importance to specialist readers are published "Supporting Information". Such documents peer-reviewed, but not copy-edited or typeset. They made available submitted authors. Please note: The publisher responsible for content...
Symmetric n- and p-type field-effect transistors (FETs) have been fabricated on the same undoped single-walled carbon nanotube (SWCNT). The polarity of FET is defined by controlled injection electrons (n-type, via Sc electrodes) or holes (p-type, Pd into SWCNT, instead chemically doping SWCNT. SWCNT-based FETs with different channel lengths show a clear trend performance improvement for length scaling. Taking full advantage perfect symmetric band structure semiconductor CMOS inverter...
High-performance graphene field-effect transistors (G-FETs) are fabricated with carrier mobility of up to 5400 cm2/V·s and top-gate efficiency 120 (relative that back gate 285 nm SiO2) simultaneously through growing high-quality Y2O3 oxide at high oxidizing temperature. The transconductance normalized by dimension drain voltage is found reach 7900 μF/V·s, which among the largest published FETs. In an as-fabricated FET a length 310 nm, peak 0.69 mS/μm realized, but further improvement...
The carbon nanotubes (CNTs) are an ideal material for infrared applications due to its excellent electronic and optoelectronic properties, suitable bandgap, mechanical chemical stabilities. In this paper, we demonstrate a photovoltaic detector which is based on aligned single-walled CNT (SWCNT) arrays. device fabricated by asymmetrically contacting the two ends of SWCNT arrays with Pd Sc different work functions, known form ohmic contacts valence conduction bands semiconducting SWCNTs...
Electroluminescence (EL) measurements are carried out on a two-terminal carbon nanotube (CNT) based light-emitting diode (LED). This device is composed of an asymmetrically contacted semiconducting single-walled (SWCNT). On the one end SWCNT with Sc and other Pd. At large forward bias, contact being grounded, electrons can be injected barrier-free into conduction band from holes valence Pd electrode. The recombine radiatively in channel yielding narrowly peaked emission peak full width at...
We propose and experimentally demonstrate an optical steganography method in which a data signal is transmitted using amplified spontaneous emission (ASE) noise as carrier. The ASE serving carrier for the private has identical frequency spectrum to existing generated by Erbium doped fiber amplifiers (EDFAs) transmission system. system also carries conventional channel that not private. so-called "stealth" or well-hidden within of Phase modulation used both stealth public channel. Using...
Numerous threats from biological aerosol exposures, such as those H1N1 influenza, SARS, bird flu, and bioterrorism activities necessitate the development of a real-time bioaerosol sensing system, which however is long-standing challenge in field. Here, we developed monitoring system for airborne influenza H3N2 viruses by integrating electronically addressable silicon nanowire (SiNW) sensor devices, microfluidics bioaerosol-to-hydrosol air sampling techniques. When virus samples were...
Hall elements are by far the most widely used magnetic sensor. In general, higher mobility and thinner active region of semiconductor used, better device. While common field sensors Si-based sensors, devices made from III-V compounds tend to favor over that based on Si. However these more expensive difficult manufacture than Si hard be integrated with signal-processing circuits for extending function enforcing performance. this article we show graphene is intrinsically an ideal material...
The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible sensor devices. Here, we present the fabrication characterization based Hall sensors. sensors are fabricated on 50 um thick Kapton foil using large scale grown by chemical vapor deposition technique copper foil. Voltage current normalized sensitivities up to 0.096 V/VT 79 V/AT were measured, respectively. These values comparable sensitivity rigid silicon highest reported so...
We demonstrate that high-quality vertically aligned SnSe nanorod (NR) arrays have been synthesized via a facile chemical vapor deposition method on SiO₂ substrates using Bi powder as catalysts. Both SEM and TEM measurements reveal this kind of NR consists one-dimensional core dense two-dimensional branches. Thermistors photoresistors fabricated in situ by directly depositing silver paint the growth substrates. The thermistor shows great merits broad temperature range (77-390 K), linear...
Top-gate HfS2 field-effect transistors (FETs) with 5 nm HfO2 as dielectrics are successfully demonstrated, on/off ratio of 10(5) and subthreshold swing 95 mV dec(-1) . Moreover, due to the self-functionalization , uniform ultrathin film free pinhole-like defects could be deposited on which is dramatically different from other transition metal dichalcogenide FETs.