With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in photodetectors have been studied extensively the past years. However, knowledge about efficient conversion at p-n junctions has not yet translated into high-performance devices. Here, we present photodetector integrated on silicon slot-waveguide, acting as dual gate to create junction optical...

Optical data links are the backbone of today's telecommunication infrastructure. The integration electronic and optic components on one chip is most attractive routes to further increase system performance. Here, we present fabrication photodetectors based CVD-grown graphene silicon photonic waveguides. devices operate bias-free in C-band at 1550 nm show an extrinsic −3 dB bandwidth 41 GHz. We demonstrate that these detectors work rates up 50 GBit/s with excellent signal integrity.

The emergence of graphene with its unique electrical properties has triggered hopes in the electronic devices community regarding exploitation as a channel material field effect transistors. Graphene is especially promising for working at frequencies 100 GHz range. So far, transistors (GFETs) have shown cutoff up to 300 GHz, while exhibiting poor voltage gains, another important figure merit analog high frequency applications. In present work, we show that gain GFETs can be improved...

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order operate them reproducibly under ambient conditions. Here we report on use atomic layer deposited aluminum oxide as field effect (GFETs). We show that successful produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated stored atmosphere. This is achieved by selecting seed prior deposition...

Graphene is considered a promising material for broadband opto-electronics because of its linear and gapless band structure. Its optical conductivity can be significantly tuned electrostatically by shifting the Fermi level. Using mentioned property, we experimentally demonstrate graphene based electro-absorption modulator with very low insertion loss. The device realized on silicon insulator (SOI) waveguide operating at 1550 nm wavelength. shows modulation depth 16 dB an loss 3.3 dB,...

Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components silicon photonic circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction enabling new PIC architectures compared state-of-the-art lasers realized through costly inefficient hybrid integration III-V semiconductors. Until now however, due chemical sensitivity perovskites, no...

Abstract Graphene has been considered as a promising material for opto-electronic devices, because of its tunable and wideband optical properties. In this work, we demonstrate electro-refractive phase modulation in graphene at wavelengths from 1530 to 1570 nm. By integrating gated layer silicon-waveguide based Mach-Zehnder interferometer, the key parameters modulator like change effective refractive index, insertion loss absorption are extracted. These experimentally obtained values well...

We present a graphene photodetector for telecom applications based on silicon photonic crystal defect waveguide. The structure is used to confine the propagating light in narrow region layer enhance light-matter interaction. Additionally, it utilized as split-gate electrode create pn-junction vicinity of optical absorption region. waveguide allows optimal photo-thermoelectric conversion occurring temperature profile into photovoltage due additional slabs both sides waveguide, enhancing...

The unique property of bilayer graphene to show a band gap tunable by external electrical fields enables variety different device concepts with novel functionalities for electronic, optoelectronic and sensor applications. So far the operation based field effect transistors requires two individual gates vary channel's conductance create gap. In this paper we report on method increase on/off ratio in single gated adsorbate doping. dopants upper side establish displacement perpendicular surface...

The excellent electronic and mechanical properties of graphene provide a perfect basis for high performance flexible sensor devices. Here, we present the fabrication characterization based Hall sensors. sensors are fabricated on 50 um thick Kapton foil using large scale grown by chemical vapor deposition technique copper foil. Voltage current normalized sensitivities up to 0.096 V/VT 79 V/AT were measured, respectively. These values comparable sensitivity rigid silicon highest reported so...

In recent years, the data traffic has grown exponentially and forecasts indicate a huge market that could be addressed by communication infrastructure service providers. However, processing capacity, space, energy consumption of available technology is serious bottleneck for exploitation these markets. Chip-integrated optical systems hold promise significantly improving issues related to current technology. At moment, answer question which material best suited ultrafast chip integrated still...

Thermo-optical tuning of the refractive index is one pivotal operations performed in integrated silicon photonic circuits for thermal stabilization, compensation fabrication tolerances, and implementation operations. Currently, heaters based on metal wires provide temperature control waveguide. The strong interaction light, however, necessitates a certain gap between heater structure to avoid significant transmission loss. Here we present graphene that overcomes this constraint enables an...

Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck photonic-integrated circuits (PICs), especially wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe2) is semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe2-based PDs directly by conformal growth on Si waveguides. The operate at 1550 nm wavelength with maximum responsivity of 11 mA/W and response times 8.4 μs. Fourier-transform IR...

We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing dependence resistance charge neutrality point as a function electric field applied perpendicular to surface, we show that band gap in density states opens, reaching an effective value ~sim50 meV. This demonstrates potential FET channel material CMOS environment.

The road to the realization of complex integrated circuits based on graphene remains an open issue so far. Current are limited by low integration depth and significant doping variations, representing major blocks for success in future electronic devices. Here we report inverters ring oscillators. By using optimized process technology high-performance transistors with local back-gate electrodes demonstrate that can be manufactured reproducibly, circumventing problems associated variations....

We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The are based CVD graphene that is compatible to wafer scale production methods.

Most battery cells are developed according to a standard design and optimized regarding their electrical properties. However, firstly, there is demand for an individual cell adapted the application. Secondly, additional properties, example, thermal mechanical, decisive behavior should be considered in overall design. Therefore, present work introduces model-based development tool holistic of format-flexible cells, which future application, allowing different geometries within one system. The...

Using the recently developed technique of microsoldering, we perform a systematic transport study influence PMMA on graphene flakes revealing doping effect up to 3.8x10^12 1/cm^2, but negligible mobility and gate voltage induced hysteresis. Moreover, show that microsoldered is free contamination exhibits very similar intrinsic rippling as has been found for lithographically contacted flakes. Finally, demonstrate current closing previously phonon gap appearing in scanning tunneling...

In this work, we successfully demonstrate how imaging ellipsometry can be applied to obtain high-resolution thickness maps of few-layer graphene (FLG) samples, with the results being thoroughly validated in a comparative study using several complementary techniques: Optical reflection microscopy (ORM), atomic force (AFM), and scanning confocal Raman microscopy. The map, revealing distinct terraces separated by steps corresponding mono- bilayers graphene, is extracted from pixel-to-pixel...

Here in this work, we study the electro-refractive modulation of CVD grown single layer graphene placed on top a silicon microring resonator biased using polymer electrolyte gate. A voltage length product for phase shift π, V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">π</sub> L = 2.7 Vmm has been extracted, which is better compared to depletion horizontal and interleaved pn junction type modulators competitive with Silicon-Insulator-Silicon...

This work reports on the fabrication and characterization of a graphene based variable optical attenuator integrated photonic Si3N4 waveguide operating at 855 nm wavelength. The utilizes gate voltage dependent absorption layer, located in evanescent field waveguide. A maximum attenuation 17 dB is obtained -3 V voltages for device length 700 µm. measured was found to be good agreement with theoretical simulations, taking into account inter- intra-band conductivity graphene. An outlook given...

We demonstrate the performance and reliable fabrication process of a 56 Gb/s wavelength-division multiplexing transmitter module with integrated feedback structures. The device is based on microring silicon depletion modulators, optimized for O-band comb-laser operation.