A5045084186- 2D Materials and Applications
- Multiferroics and related materials
- Ferroelectric and Piezoelectric Materials
- Perovskite Materials and Applications
- Acoustic Wave Resonator Technologies
- Electronic and Structural Properties of Oxides
- MXene and MAX Phase Materials
- Advanced Condensed Matter Physics
- Topological Materials and Phenomena
- Advanced Sensor and Energy Harvesting Materials
- Ga2O3 and related materials
- Advanced Photocatalysis Techniques
- X-ray Diffraction in Crystallography
- Advanced Materials and Mechanics
- Machine Learning in Materials Science
- Electron and X-Ray Spectroscopy Techniques
- Advanced Materials Characterization Techniques
- ZnO doping and properties
- Dendrimers and Hyperbranched Polymers
- Muon and positron interactions and applications
- Copper-based nanomaterials and applications
- Advanced Electron Microscopy Techniques and Applications
- Physics of Superconductivity and Magnetism
- Atomic and Molecular Physics
- Magnetic properties of thin films
Fudan University
2023-2025
Chinese Academy of Sciences
2025
Science and Technology on Surface Physics and Chemistry Laboratory
2025
State Key Laboratory of Surface Physics
2024-2025
Czech Academy of Sciences, Institute of Physics
2025
ShangHai JiAi Genetics & IVF Institute
2023-2024
Hunan Normal University
2021-2024
State Key Laboratory of Electronic Thin Films and Integrated Devices
2014
National Engineering Research Center of Electromagnetic Radiation Control Materials
2014
Second Artillery General Hospital of Chinese People's Liberation Army
1998
Two-dimensional (2D) ferroelectrics, which are rare in nature, enable high-density nonvolatile memory with low energy consumption. Here, we propose a theory of bilayer stacking ferroelectricity (BSF), two stacked layers the same 2D material, different rotation and translation, exhibit ferroelectricity. By performing systematic group analysis, find all possible BSF 80 layer groups (LGs) discover rules about creation annihilation symmetries bilayer. Our general can not only explain previous...
Abstract For an ordinary ferroelectric, the magnitude of spontaneous electric polarization is at least one order smaller than that resulting from ionic displacement lattice vectors, and direction determined by point group ferroelectric. Here, we introduce a new class ferroelectricity termed Fractional Quantum Ferroelectricity. Unlike ferroelectrics, Ferroelectricity arises substantial atomic displacements are comparable to constants. Applying theory analysis, identify 27 potential groups can...
Abstract Realization of higher-order multistates with mutual interstate switching in ferroelectric materials is a perpetual drive for high-density storage devices and beyond-Moore technologies. Here we demonstrate experimentally that antiferroelectric van der Waals CuInP 2 S 6 films can be controllably stabilized into double, quadruple, sextuple polarization states, system harboring order six also reversibly tunable four or two. Furthermore, given order, achieved via moderate electric field...
Traditional ferroelectrics are limited by Neumann's principle, which confines exploration of within polar point groups. Our recent work [Ji et al., Nat. Commun. 15, 135 (2024)NCAOBW2041-172310.1038/s41467-023-44453-y] proposes the concept fractional quantum ferroelectricity (FQFE) that extends playground to nonpolar Here, we apply group theory and introduce an efficient symmetry strategy identify FQFE candidates. Integrated with a high-throughput screening scheme, go through 171 527...
Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low-energy consumption. The newly discovered layered ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}{({\mathrm{Bi}}_{2}{\mathrm{Te}}_{3})}_{n}$ their Sb counterparts exhibit $A$-type antiferromagnetism intriguing topological properties. Here we propose to obtain tunable magnetic multistates thin films by ferroelectrically manipulating the interlayer couplings based on Heisenberg model...
Ferrovalley, which refers to the valley polarization being nonvolatile and switchable, is highly desired for valleytronics applications but remains challenging due rare candidate materials. Here we propose a strategy realize ferrovalley with bilayer stacking (BSFV) in many systems. As special case of BSFV, sliding corresponds bilayers obtained by direct AA subsequent in-plane sliding. Different from previous approaches, BSFV not only maintains time-reversal symmetry, also keeps...
2D transition metal dichalcogenides (TMDCs) are considered as promising materials in post-Moore technology. However, the low photoluminescence quantum yields (PLQY) and single carrier polarity due to inevitable defects during material preparation great obstacles their practical applications. Here, an extraordinary defect engineering strategy is reported based on first-principles calculations realize it experimentally WS
Two-dimensional ferroelectrics (FEs) are promising in the miniaturization of memory devices with ultra-high-density data storage and low power consumption. However, many thiophosphate monolayers, i.e., analogs ${\mathrm{CuInP}}_{2}{\mathrm{S}}_{6}$ referred to as ${\mathrm{ABP}}_{2}{\mathrm{X}}_{6}$, lose ferroelectricity instead exhibit an antiferroelectric (AFE) or paraelectric ordering. We propose tune AFE ${\mathrm{ABP}}_{2}{\mathrm{X}}_{6}$ monolayers into FE ordering through interface...
This study reports the room-temperature ferromagnetism in Cr-doped TiO2 nanotubes (NTs) synthesized via electrochemical method followed by a novel Cr-doping process. Scanning electron microscopy and transmission showed that NTs were highly ordered with length up to 26 μm, outer diameter about 110 nm, inner 100 nm. X-ray diffraction results indicated there no magnetic contaminations of metallic Cr clusters or any other phases except anatase TiO2. The further annealed oxygen, air argon, was...
The bistability of charge polarization in ferroelectric materials has long been the basis devices. However, ferroelectricity tends to be vanishing as thickness is reduced a few nanometers or thinner due depolarization field. Instead, they show paraelectric an antiferroelectric ordering ultra-thin limit, which unfavorable for their applications Here we uncover multistates thin films van der Waals materials, individual monolayers have with out-of-plane polarizations. This property results from...
Abstract Realization of higher-order multistates with mutual interstate switching in ferroelectric materials is a perpetual drive for non-Boolean high-density storage devices and beyond-Moore technologies. Here we demonstrate experimentally that antiferroelectric van der Waals CuInP 2 S 6 films can be controllably stabilized into double, quadruple, sextuple polarization states, system harboring order six also reversibly tunable four or two. Furthermore, given order, achieved via moderate...