Abstract For decades, the revolution in design and fabrication methodology of flexible capacitive pressure sensors using various inorganic/organic materials has significantly enhanced field wearable electronics with a wide range applications aerospace, automobiles, marine environment, robotics, healthcare, consumer/portable electronics. Mathematical modelling, finite element simulations, unique strategies are utilized to fabricate diverse shapes diaphragms, shells, cantilevers which function...

Since the outbreak of severe respiratory disease caused by novel coronavirus (COVID-19), use face masks has become ubiquitous worldwide to control rapid spread this pandemic. As a result, world is currently facing mask shortage, and some countries have placed limits on number that can be bought each person. Although surgical grade N95 provides highest level protection available, its filtration efficiency for sub-300 nm particles around 85% due wider pore size (∼300 nm). Because COVID-19...

Abstract Point‐of‐care testing (POC) has the ability to detect chronic and infectious diseases early or at time of occurrence provide a state‐of‐the‐art personalized healthcare system. Recently, wearable flexible sensors have been employed analyze sweat, glucose, blood, human skin conditions. However, sensing system that allows for real‐time monitoring throat‐related illnesses, such as salivary parotid gland swelling caused by flu mumps, is necessary. Here, first time, wearable, highly...

Being renowned for operating with visible-light pulses and electrical signals, optoelectronic memristive synaptic devices have excellent potential neuromorphic computing systems artificial visual information processing. Here, a flexible back-end-of-line-compatible memristor based on solution-processable black phosphorus/HfOx bilayer features, toward biomimetic retinas is presented. The device shows highly stable features such as long-term potentiation (LTP) depression (LTD) repetitive 1000...

Motion sensors are an essential component of many electronic systems. However, the development inertial motion based on fatigue-free soft proof mass has not been explored extensively in field electronics. Nontoxic gallium-based liquid metals emerging class material that exhibit attractive electromechanical properties, making them excellent materials for sensors. Here, we propose and demonstrate a fully laser-induced graphene (LIG) metal-based sensor integrated with temperature, humidity,...

Abstract Optoelectronic devices are advantageous in in-memory light sensing for visual information processing, recognition, and storage an energy-efficient manner. Recently, sensors have been proposed to improve the energy, area, time efficiencies of neuromorphic computing systems. This study is primarily focused on development a single sensing-storage-processing node based two-terminal solution-processable MoS 2 metal–oxide–semiconductor (MOS) charge-trapping memory structure—the basic...

The emergence of the Internet-of-Things is anticipated to create a vast market for what are known as smart edge devices, opening numerous opportunities across countless domains, including personalized healthcare and advanced robotics. Leveraging 3D integration, devices can achieve unprecedented miniaturization while simultaneously boosting processing power minimizing energy consumption. Here, we demonstrate back-end-of-line compatible optoelectronic synapse with transfer learning method on...

Four-dimensional (4D) printing has attracted significant attention, because it enables structures to be reconfigured based on an external stimulus, realizing complex architectures that are useful for different applications. Nevertheless, most previously reported 4D-printed components have focused actuators, which just one part of a full soft robotic system. In this study, toward achieving fully systems, the design and direct ink writing sensors with straining mechanism mimics 4D effect...

Abstract Bioinspired skin adhesives are promising alternatives to traditional glue‐based patches for use in various skin‐attachable devices. However, the typical nano‐/microfabrication of these bioinspired microstructures provides limited manufacturing freedom over their performance, constraining versatility and customization widespread use. In this study, a hybrid 3D printing approach fabricating permeable patch is developed with adhesive miniaturized octopus‐like suckers (AMOS) biosignal...

Organic mixed ionic-electronic conductors (OMIECs) are materials that can be used to build bio-inspired electronic devices as they emulate ion-based cellular communication through doping with aqueous ionic charges. The integration of charge photogeneration and electrochemical processes in the polymer film enables optoelectronic applications involve synaptic transistors. However, no OMIEC has yet been implemented create a miniaturized photoactive platform capable perceiving processing...

Abstract Stretchable solar cells are of growing interest due their key role in realizing many applications such as wearables and biomedical devices. Ultrastretchability, high energy‐efficiency, biocompatibility, mechanical resilience essential characteristics energy harvesting Here, the development wafer‐scale monocrystalline silicon with world‐record ultrastretchability (95%) efficiency (19%) is demonstrated using a laser‐patterning based corrugation technique. The approach transforms...

A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of and measure current-voltage characteristics. Forward reverse bias n-p behavior with good rectification properties achieved. grown 80°C exhibited highest on/off ratio turn-on voltage (VON) ∼3.5...

A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The layer formed by spin coating 2 nm between Atomic Layer Deposited ZnO steps. threshold voltage shift (ΔVt) vs. programming studied and without the nanoparticles. Applying −1 V for 5 s at gate of results in a ΔVt 3.4 V, window can be up to 8 an excellent retention characteristic (>10 yr). Without nanoparticles, voltage, negligible. In order get excess 10 required. negative on...

This work shows the feasibility of a vertically stacked nanosheet field effect transistor (NSFET) for charge-trapping memory and artificial synaptic devices. The synapse’s behaviors, long-term potentiation (LTP), depression (LTD) are analogous to erase (ERS) program (PGM) memory, respectively. NSFET device with gate length 50 nm achieves wider window (MW), long retention time programming, infinite (> <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

In this work, we have utilized a vertical double gate (DG) charge-trapping memory (CTM) to implement Boolean logic functions for in-memory computing (IMC). IMC architecture is an efficient and revolutionary paradigm that can overcome the limitations of von Neumann's computing. The independent operation device successfully implements such as AND, OR, NAND, NOR in two steps, namely, program read operations. Moreover, proposed method with DG efficiently XOR XNOR Furthermore, simulated high-...

A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The shows a large threshold voltage Vt shift (4 V) at low operating (6/−6 V), good retention (&amp;gt;10 yr), and endurance characteristic (&amp;gt;104 cycles). This performance compared to control devices (or ZnO) thicker tunnel oxide. These structures showed reduced characteristic. GNIZ structure allows for scaling down the oxide thickness along improving window of data....

In this work, the fabrication of charge trapping memory cells with laser-synthesized indium-nitride nanoparticles (InN-NPs) embedded in ZnO layer is demonstrated. Atomic deposited Al2O3 layers are used as tunnel and blocking oxides. The gate contacts sputtered using a shadow mask which eliminates need for any lithography steps. High frequency C-Vgate measurements show that effect observed, due to charging InN-NPs. With low operating voltage 4 V, shows noticeable threshold (Vt) shift 2...