Passivation of Ge has been a critical issue for MOS applications in future technology nodes. In this letter, we introduce ozone oxidation to engineer Ge/insulator interface. Density interface states (D <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">it</sub> ) across the bandgap and close conduction band edge was extracted using conductance technique at low temperatures. D dependence on growth conditions studied. Minimum 3 times 10 <sup...

The authors report on the use of hollow cathode plasma for low-temperature plasma-assisted atomic layer deposition (PA-ALD) crystalline AlN, GaN and Al_xGa_1−xN thin films with low impurity concentrations.

Abstract Nanostructured hybrid heterojunctions have been studied widely for photocatalytic applications due to their superior optical and structural properties. In this work, the impact of angstrom thick atomic layer deposited (ALD) ZnO shell on activity (PCA) hydrothermal grown single crystalline TiO 2 nanowires (NWs) is systematically explored. We showed that a cycle ALD wrapped around NWs, considerably boosts PCA heterostructure. Subsequent cycles, however, gradually hinder NWs. Various...

In P3HT:PCBM based organic solar cells we propose and demonstrate numerically plasmonic backcontact grating architectures for strong optical absorption enhanced in both transverse-magnetic transverse-electric polarizations. Even when the active material is partially replaced by metallic (without increasing layer film thickness), show computationally that light thin-film increased a maximum factor of ~21% considering polarizations under AM1.5G radiation over half-maximum incidence angle 45°...

In this work, we propose Silicon based broad-band near infrared Schottky barrier photodetectors. The devices operate beyond 1200 nm wavelength and exhibit photoresponsivity values as high 3.5 mA/W with a low dark current density of about 50 pA/µm2. We make use Au nanoislands on surface formed by rapid thermal annealing thin layer. Surface plasmons are excited field localization results in efficient absorption sub-bandgap photons. Absorbed photons excite the electrons metal to higher energy...

A large-area superhydrophobic and omnidirectional antireflective nanostructured organically modified silica coating has been designed prepared. The mimics the self-cleaning property of lotus leaves broad band antireflectivity moth compound eyes, simultaneously. Water contact sliding angles are around 160° 10°, respectively. Coating improves transmittance glass substrate 4%, when coated on a single side glass, in visible near-infrared region at normal incidence angles. At oblique (up to 60°)...

Abstract Absorbing infrared radiation efficiently is important for critical applications such as thermal imaging and spectroscopy. Common absorbing materials are not standard in Si VLSI technology. We demonstrate ultra-broadband mid-infrared absorbers based purely on silicon. Broadband absorption achieved by the combined effects of free carrier absorption, vibrational plasmonic resonances. The absorbers, consisting periodically arranged silicon gratings, can be fabricated using optical...

We have demonstrated for the first time, with both simulations and experiments, application of an asymmetric metal electrode scheme in Group IV metal-semiconductor-metal photodetectors (MSM-PDs) to effectively lower dark current (I/sub dark/) without sacrificing photocurrent photo/) substantially. A new metric was introduced by normalizing photocurrent-to-dark ratio input optical power (NPDR) provide objective assessment detector performance. Improvement at least 1.4 times NPDR obtained...

We present a C-shaped nanoaperture-enhanced Ge photodetector that shows 2-5 times the photocurrent enhancement over from square aperture of same area at 1310 nm wavelength. demonstrate polarization dependence C-aperture wide wavelength range. Our experimental observation agrees well with finite-difference time-domain simulation results.

Hot electron photovoltaics is emerging as a candidate for low cost and ultra thin solar cells. Plasmonic means can be utilized to significantly boost device efficiency. We separately form the tunneling metal-insulator-metal (MIM) junction collection plasmon exciting MIM structure on top of each other, which provides high flexibility in plasmonic design separately. demonstrate close one order magnitude enhancement short circuit current at resonance wavelengths.

This paper presents a systematic study on the effects of angstrom-thick atomic layer deposited (ALD) ZnO sheaths hydrothermally-grown TiO₂ nanowires (NWs) used as photoanodes in dye-sensitized solar cells (DSSCs).

We demonstrate near-infrared waveguide photodetectors using Ge-SiGe quantum wells epitaxially grown on a silicon substrate. The diodes exhibit low dark current of 17.9 mA/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 5-V reverse bias. are designed to work optimally 1480 nm, where the external responsivity is 170 mA/W, which mainly limited by fiber-to-waveguide coupling loss. 1480-nm wavelength matches optimum for quantum-well...

Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Ashkan Behnam, Jason L. Johnson, Yongho Choi, M. Günhan Ertosun, Ali K. Okyay, Pawan Kapur, Krishna C. Saraswat, Ant Ural; Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures. Appl. Phys. Lett. 16 June 2008; 92 (24): 243116....

We report on the development of UV range photodetector based molybdenum disulfide nanocrystals (MoS₂-NCs). The inorganic MoS₂-NCs are produced by pulsed laser ablation technique in deionized water and colloidal characterized transmission electron microscopy, Raman spectroscopy, X-ray diffraction UV/VIS absorption measurements. photoresponse studies indicate that fabricated (MoS₂-NCs PD) operates well within 300-400 nm range, with diminishing response at visible wavelengths, due to...

A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in single atomic layer deposition step is demonstrated. Thin-film ZnO used as channel material and charge-trapping for the first time. The extracted mobility subthreshold slope of device are 23 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$\hbox{cm}^{2}/\hbox{V}\cdot \hbox{s}$</tex></formula> 720 mV/dec, respectively....

Blue luminescent colloidal silicon nanocrystals (Si-NCs) were produced in a two-stage process. In the first step, synthesis of Si-NCs was achieved by femtosecond pulsed laser ablation wafer, which immersed deionized water. The size and structural chemical characteristics investigated TEM EDAX analyses, it is found out that are spherical shape particle diameters range 5–100 nm. second ultrasonic waves filtering chemical-free post-treatment solution performed to reduce size. High-resolution...

Here, we report the synthesis of vanadium diselenide (VSe

We report on the low-temperature growth of crystalline Ga2O3 films Si, sapphire, and glass substrates using plasma-enhanced atomic layer deposition (PEALD) featuring a hollow-cathode plasma source. Films were deposited by triethylgallium (TEG) Ar/O2 as metal precursor oxygen co-reactant, respectively. Growth experiments have been performed within 150–240 °C substrate temperature 30–300 W radio-frequency (rf) power ranges. Additionally, each unit AB-type ALD cycle was followed an in situ Ar...

We demonstrate extremely efficient germanium-on-silicon metal-semiconductor-metal photodetectors with responsivities (R) as high 0.85 A/W at 1.55 μm and 2V reverse bias. Ge was directly grown on Si by using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing to reduce surface roughness threading dislocations that form due the 4.2% lattice mismatch. Photodiodes such layers exhibit dark currents 100 mA/cm2 external quantum efficiency up 68%. This technology is...

We demonstrate normal incidence p-i-n photodiodes on selective-area-grown Ge using multiple hydrogen annealing for heteroepitaxy the purpose of monolithic integration. An enhanced efficiency in near-infrared regime and absorption edge shifting to longer wavelength is achieved due 0.14% residual tensile strain Ge. The responsivities at 1.48, 1.525, 1.55 mum are 0.8, 0.7, 0.64 A/W, respectively, without an optimal antireflection coating. These results promising toward monolithically integrated...

We propose and demonstrate a design concept of volumetric plasmonic resonators that relies on the idea incorporating coupled layers structures embedded into solar cell in enhanced optical absorption for surface-normal off-axis angle configurations, beyond enhancement limit individual layers. For proof-of-concept demonstration thin-film organic uses absorbing materials copper phthalocyanine/perylene tetracarboxylic bisbenzimidazole, we couple two silver grating such field localization is...

A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of and measure current-voltage characteristics. Forward reverse bias n-p behavior with good rectification properties achieved. grown 80°C exhibited highest on/off ratio turn-on voltage (VON) ∼3.5...