We report on the low-temperature growth of crystalline Ga2O3 films Si, sapphire, and glass substrates using plasma-enhanced atomic layer deposition (PEALD) featuring a hollow-cathode plasma source. Films were deposited by triethylgallium (TEG) Ar/O2 as metal precursor oxygen co-reactant, respectively. Growth experiments have been performed within 150–240 °C substrate temperature 30–300 W radio-frequency (rf) power ranges. Additionally, each unit AB-type ALD cycle was followed an in situ Ar...

Nuclear power plants increasingly utilize digitalized systems, including computer-based procedures (CBPs) and automation. These novel technologies require human factors’ evaluation to ensure safety. Potentially, automation contributes safety by reducing workload, but may also induce a loss of situation awareness trust miscalibration. The current study investigated workload during simulated nuclear plant (NPP) emergency operation procedure (EOP) executed using CBP supported Two levels (LOA)...

In this work, we have studied the role varying nitrogen plasma compositions play in low-temperature plasma-assisted growth of indium nitride (InN) thin films. Films were deposited on Si (100) substrates using a plasma-enhanced atomic layer deposition (PE-ALD) reactor featuring capacitively-coupled hollow-cathode source. Trimethylindium (TMI) and variants (N2-only, Ar/N2, Ar/N2/H2) used as metal precursor co-reactant, respectively. situ ellipsometry was employed to observe individual ligand...

In this study, the authors have carried out real-time process monitoring via in situ ellipsometry to understand impact of rf-plasma power and plasma exposure time on self-limiting aluminum nitride (AlN) growth character corresponding film properties. AlN thin films were grown Si(100) substrates with plasma-enhanced atomic layer deposition using trimethyl-aluminum (TMA) as a metal precursor Ar/N2/H2 coreactant. Saturation experiments been employed range 25–200 W 30–120 s time. multiwavelength...

In this work, we report on low-temperature as-grown single-phase epitaxial beta-gallium oxide (β-Ga2O3) films c-plane sapphire at the substrate temperature of 240 °C using plasma-enhanced atomic layer deposition (PEALD). The were deposited triethylgallium (TEG) and Ar/O2 plasma as metal precursor oxygen co-reactant, respectively. Growth experiments performed with an rf-power level 50 W. Additionally, each unit ALD cycle was followed by in situ Ar-plasma annealing treatment, which consisted...

Plasmonic nanostructures with electrical connections have potential applications as new electro-optic devices due to their strong light–matter interactions. dimers nanogaps between adjacent are especially good at enhancing local electromagnetic (EM) fields resonance for improved performance. In this study, we use optical extinction measurements and high-resolution electron microscopy imaging investigate the thermal stability of electrically interconnected plasmonic morphological properties....

Many nuclear power plants in the U.S. and worldwide are currently monitored controlled via control rooms outfitted primarily with analog instrumentation controls (I&C). Due to obsolescence issues parts for I&C along a desire leverage efficiency gains associated digital systems, there is an increasing focus on modernization activities both safety non-safety systems. Digital can include addition of instrumentation, sensors, systems; some that visible operators not. Operator-facing...

This study focuses on implementing 1-octanethiol gold nanoparticles (OT-AuNPs) as chemiresistive sensors and comparing fabrication by inkjet-printing with conventional drop-casting to detect volatile organic compounds (VOCs) explosives including HMTD, PETN, KClO 3 , TATP, RDX, TNT, UN. Inkjet-printing technology potentially offers more controlled deposition of OT-AuNPs uniform sensor properties compared a process. Using inkjet-printing, we found that minimum 600 printed layers 2.4[Formula:...

Modern integrated circuits have active components on the order of nanometers. However, optical devices are often limited by diffraction effects with dimensions measured in wavelengths. Nanoscale photodetectors capable converting light into electrical signals necessary for miniaturization optoelectronic applications. Strong coupling and free electrons plasmonic nanostructures overcomes these limitations confining sub-wavelength volumes intense local electric fields. Localized fields...

Volatile organic compounds (VOCs) are ubiquitous in the surroundings, originating from both industrial and natural sources. VOCs directly impact quality of indoor outdoor air play a significant role processes such as fruit ripening body’s metabolism. VOC monitoring has seen growth recently, with an emphasis on developing low-cost, portable sensors capable vapor discrimination concentration measurements. sensing remains challenging, mainly because these nonreactive, appear low concentrations...

Plasmonic materials exhibit localized plasmon resonances that collect light and concentrate electric fields around nanostructures. The field enhancements are useful for applications such as spectroscopy, catalysis, photodetection. Electric dependent on the materials, geometric designs, positioning of dimers especially effective to between nanostructures, there is significant interest develop nanofabrication strategies control interparticle distances with subnanometer precision arbitrary...

Complexity can be characterized at numerous levels; physical, perceptual, and cognitive features all influence the overall complexity of an informational display. The Human Performance Test Facility (HPTF) U.S. Nuclear Regulatory Commission (NRC) develops lightweight simulator studies to examine workload induced by various control room-related tasks in expert non-expert populations. During initial development simulator, was defined based on number elements each panel. While items roughly...