A5004606063- Silicon Carbide Semiconductor Technologies
- Electromagnetic Compatibility and Noise Suppression
- Advanced DC-DC Converters
- Multilevel Inverters and Converters
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Diverse Aspects of Tourism Research
- Transportation and Mobility Innovations
- Smart Cities and Technologies
- Microgrid Control and Optimization
- Media Influence and Health
- Consumer Behavior in Brand Consumption and Identification
- Digital Marketing and Social Media
- Electrostatic Discharge in Electronics
- Fiber-reinforced polymer composites
- Sharing Economy and Platforms
- Environmental Education and Sustainability
- Electric Motor Design and Analysis
STMicroelectronics (Czechia)
2024
Institut du Développement Durable et des Relations Internationales
2024
STMicroelectronics (Italy)
2019-2024
Dong-A University
2024
University of Greenwich
2022
This study proposes a novel comprehensive model integrating contextual, habitual, and psychological processes to address the multi-determination feature of tourists' pro-environmental behavior (TPEB) intention. The includes religious ambience as contextual process, domestic (DPEB) habitual awe, along with Norm Activation Theory, process. A questionnaire survey was administered at Guandi Temple, popular site in Haizhou, China, collecting 363 valid datasets test using Structured Equation...
The main aim of this work is to present a step-by-step procedure model and analyze the power loss distribution three-level Gallium Nitride (GaN) inverters. It has been applied three distinct three-phase voltage source inverters utilized in electric traction drives: Active Neutral Point Clamped, Clamped T-Type Clamped. proposed analytical modelling, combined with an equivalent representation electrical machine proved be viable solution achieve time-saving low computational burden simulation...
This paper investigates the behavior of SiC MOSFETs body diode reverse recovery as a function different operating conditions. The knowledge their effects is crucial to properly designing and driving power converters based on devices, in order optimize commutations aiming at improving efficiency. Indeed, part switching transient, but it has significant role due its impact energy charge. set conditions been chosen prevent or force snappy device under testing. experimental results specific...
This paper proposes performance evaluation of SiC MOSFETs power devices introducing in the device layout some specific design to achieve desired value intrinsic gate resistance. aspect can be helpful eliminate external components such as resistance, saving space and cost, considering application driver directly connected device. Description about modification die is presented dedicated simulation approach set exploited predict signal propagation on while verifying resistance defined by new...
The aim of this paper is to evaluate the impact SiC MOSFET body diode reverse recovery on device switching speed limits. Half-bridge converter leg, composed 1200V, 130A MOSFETs in HIP 247-4L package, has been analyzed study and experimental tests have conducted, evaluating electrical stresses which power devices are subjected when they operated extreme conditions. Results highlight how process can be significantly affected by operating conditions, terms current slopes temperature.
The development and the validation of an averaged-value mathematical model asymmetrical hybrid multi-level rectifier is presented in this work. Such a composed three-level T-type unidirectional two-level inverter connected to open-end winding electrical machine. rectifier, which supplies load, operates at quite low switching frequency order minimize power losses. instead driven by standard sinusoidal pulse width modulation (SPWM) technique suitably shape input current. also plays key role...
Identification of tourists’ sentiments is relevant to the destination’s planning. Tourists generate extensive User Generated Content (UGC)—embedding their sentiments—in form textual data when sharing experiences on Internet. These UGC tend influence decision-making, thus, representing an important source for tourism research and By obtaining from Mafengwo Ctrip, sentiment analysis was conducted shed light tendency Chinese tourists in seven Pacific Island Countries Territories (PICTs). Eleven...
Measuring the gate-source voltages of wide bandgap (WBG) devices in half-bridge converters provides useful information about susceptibility to crosstalk, which can cause uncontrolled cross-conduction and excessive gate-oxide stresses. However, parasitic elements printed circuit board (PCB) device packaging compromise measurement accuracy, causing unreliable results. Here we describe how this shortcoming be addressed using packages that have a Kelvin source pin, allowing more accurate analysis.
The aim of this paper is to provide an accurate analytical modeling a Silicon Carbide MOSFETs-based half bridge converter including all the major contributions due parasitic elements device package and PCB layout. turn on off switching transients as well on-state conduction are mathematically described, implemented in Matlab validated through wide experimental tests campaign. Differently than previous field, adopted SiC MOSFET during transient offers good compromise between computational...
The main aim of this paper is to provide an analytical model the turn on transient behaviour Silicon Carbide (SiC) MOSFETs used in a half bridge converter topology. includes high frequency parasitic elements PCB board, bus-bar, device packaging, order very accurate prediction power devices performance over wide operating range. A critical issue modeling given by transconductance profile, which has been determined using different methods. proposed approach can be considered valuable tool...
The aim of this paper is to provide an analytical model the power devices turn-off in a Silicon Carbide (SiC) MOSFETs-based inverter leg. In proposed modeling approach, different methods have been evaluated characterize transconductance profiles, which playa key role switching behavior devices. method represents good compromise between computational efforts and accuracy. last has by comparing simulation results with experimental tests, under operating conditions.
The aim of this paper is to suitably exploit the measurements gate-source voltages extract useful information relative crosstalk phenomena that can occur in SiC MOSFETs half-bridge converters. In particular, work underlines how measurement voltage complementary power device be significantly compromised by parasitic elements related printed circuit board layout and packaging, providing not reliable results, which do reflect real trend induced voltages. A more measure has been obtained...
The main aim of this work is to present a step-by-step procedure model and analyze the power loss distribution three-level Gallium Nitride (GaN) inverters. It has been applied three distinct three-phase three-levels voltage source inverters utilized in electric traction drives: Active Neutral Point Clamped, Clamped T-Type Clamped. proposed analytical modelling, combined an equivalent representation electrical machine demonstrated be viable solution achieve time-saving low computational...
This work investigates the occurrences of Parasitic Turn-On and Snappy Recovery during reverse recovery process in Silicon Carbide MOSFETs under various operating conditions. Both phenomena can significantly alter response, leading to it being too "soft" or "snappy", resulting increased electrical losses stresses on power devices regular operations. document presents a description experimental investigation these half-bridge topology for different switching settings, highlighting their...
The aim of this paper is to analyze the cross-conduction that happens during switching operation a standard two-level half-bridge power converter leg, also known as "Miller turn-on". In type when one device turns on, complementary usually kept in off state applying negative gate-source voltage, but it can be suddenly triggered on due induced voltage spike at terminals, thus channel slightly activated conducting certain amount current. Consequently, considering reverse recovery charge (Q <inf...
The main aim of this work is to evaluate the robustness short circuits SiC MOSFETs featuring different commercially available packages. During these tests, dice power devices are subjected significant temperature gradients because high dissipation and thus, as a result, considerable thermomechanical stresses. Experimental investigation has been performed by considering discrete three or four leads packages, where their housing filled with epoxy resin for purpose study also silicone-gel,...