A5101635985- Silicon and Solar Cell Technologies
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Photovoltaic System Optimization Techniques
- ZnO doping and properties
- Ga2O3 and related materials
- Nanowire Synthesis and Applications
- Oil and Gas Production Techniques
- Hydraulic Fracturing and Reservoir Analysis
- Drilling and Well Engineering
- Graphene research and applications
- GaN-based semiconductor devices and materials
- Electronic and Structural Properties of Oxides
- Copper-based nanomaterials and applications
- Quantum Dots Synthesis And Properties
Institute of Electrical Engineering
2023-2024
Chinese Academy of Sciences
2023-2024
University of Chinese Academy of Sciences
2023-2024
Yunnan University
2016
Omega Optics (United States)
1996
This letter reports on the fabrication and characterization of visible-blind ultraviolet photoconductors using single-crystal AlxGa1−xN layers deposited basal plane sapphire substrates. With aluminum mole fractions ranging from 5% to 61%, long-wavelength cutoff can be varied 350 240 nm. Photoresponsitivities as high several hundred amperes per watt were measured with 10 μm interelectrode spacing.
The growth of Ge quantum dots (QDs) using the ion beam sputtering deposition technique has been successfully conducted directly on single-layer graphene supported by SiO2/Si substrate. results show that morphology and size QDs can be modulated tuning coverage. Charge transfer behavior, i.e. doping effect in demonstrated at interface Ge/graphene. Compared with traditional grown Si substrate, positions both corresponding photoluminescence (PL) peaks QDs/graphene hybrid structure undergo a...
Abstract Guang'an gas field in Sichuan Province, whose discovery was officially announced by CNPC August 2005, is a large-scale reservoir that has excess of 100 billion m3 natural reserves. The main sandstone the field, Xujiahe formation, mainly consists Xu-2, Xu-4, and Xu-6 formation. lithology which section, where fine-medium feldspar-quartzite sand, lithic pore type dominated inter-granular, small inter-granular intra-granular dissolved pore. porosity generally ranges from 4–10%, with...
Ultraviolet (UV)‐induced degradation (UVID) poses a significant challenge for the prospective mass production of silicon heterojunction (SHJ) solar cells, known their high efficiency. In this study, magnified impact UV radiation when employing carbide (SiC)‐based transparent passivating contact (TPC) on front side SHJ cells is reported. A reduction in open‐circuit voltage ( V OC ), short‐circuit current J SC and fill factor 12%, 6%, 11%, respectively, observed after exposure. Conventional...