A5053142144- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Semiconductor materials and devices
- Surface Modification and Superhydrophobicity
- Thin-Film Transistor Technologies
- Organic and Molecular Conductors Research
- Advanced Image and Video Retrieval Techniques
- Gas Sensing Nanomaterials and Sensors
- Anodic Oxide Films and Nanostructures
- Medical Image Segmentation Techniques
- Optical Coatings and Gratings
- Solidification and crystal growth phenomena
- Robotics and Sensor-Based Localization
- Crystallization and Solubility Studies
- X-ray Diffraction in Crystallography
- Thermal and Kinetic Analysis
- Surface Roughness and Optical Measurements
- Evaluation Methods in Various Fields
- Thermal properties of materials
- Nanomaterials and Printing Technologies
- Modular Robots and Swarm Intelligence
- Tribology and Wear Analysis
- Brake Systems and Friction Analysis
- Advanced Fiber Laser Technologies
- Ga2O3 and related materials
Taizhou University
2023-2024
Nanchang University
2023
Southeast University
2019-2022
National Taiwan Normal University
2005
Arizona State University
1989-1992
The M55–M51 sub-members of the Middle Ordovician Majiagou Formation in gas fields central Ordos Basin were taken as a case to analyze vertical zonation characteristics weathered crust ancient karst and evaluate predict reservoirs through plenty core thin section observation, with geological background petrological main clue. According detailed underground surveys, description typical section, systematic sampling, laboratory test, there mainly developed formation rock transformation top...
In this paper, a model of etch rates crystallographic planes sapphire based on step flow mechanism is proposed, which explains the relationship between and atomic structures accurately. By analyzing structure sapphire, method identifying step-terrace established. Step-terrace can be composed crystal units (cluster atoms) terrace types, edge-terrace types by different combinations. Etch expressed as functions removal units. Thus, The values obtained established matrix equations experimental...
Abstract In this paper, the simple, rejection-based kinetic Monte Carlo simulation method is applied for approximate of etch rates and three-dimensional structures during anisotropic wet etching sapphire. Based on analysis composition atomic structure sapphire, a model simplified sapphire proposed, which reduces difficulty classifying types surface atoms different crystallographic planes. This enables adopting previously proposed six-index classification (to differentiate effectively between...
With the continuous development of manufacturing technology micro/nano devices based on GaN, focused gallium ion beam has become a momentous method for machining complex GaN structures. Therefore, this study focuses characterization and simulation sputtering etched profile by Ga FIB substrate. First, experiments are carried out to analyze influence dose, dwelling time, scan area, results reflect that regularity substrate differs from Si substrate, especially in redeposition effect, milling...
The governing equations of two-phase flows including gas and polymer melt are presented, which solved using finite volume domain extension methods with SIMPLEC technology. filling primary penetration in gas-assisted injection molding (GAIM) process simulated, where the Cross-viscosity model is employed to describe rheological behavior, CLSVOF(coupled Level Set Volume fluid) method capture moving interfaces. In order test verify coupled methods, a rectangular plate an insert numerical results...
In this study, a series of composites comprising polyether ether ketone (PEEK) and carbon fiber (CF)-reinforced polybenzoxazine for high-temperature friction materials vehicle brake applications were developed using compression molding technique. The objective research was to systematically investigate the thermal, mechanical (tensile flexural), tribological performance made from polybenzoxazine-based by varying PEEK/CF mass ratio. Our study reveals substantial improvement effect increased...
The optical reflectance of the ternary rare-earth intermetallic material ${\mathrm{Lu}}_{5}{\mathrm{Rh}}_{4}{\mathrm{Si}}_{10}$ has been measured over a wide frequency range $(50--55\phantom{\rule{0.2em}{0ex}}000\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1})$ and at temperatures between 15 $300\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. charge-density-wave (CDW) transition $({T}_{\mathrm{CDW}}\ensuremath{\sim}147\phantom{\rule{0.3em}{0ex}}\mathrm{K})$ in this compound manifests...
This paper establishes a Monte Carlo simulation model based on the complicated atomic structure of sapphire, which can accurately simulate etch rates and structures sapphire for first time. effectively divides connection ways Al-O atoms different bond lengths between atoms, further proposes removal probability equation surface thereby establishing relationship probabilities their neighbor atoms. Small errors simulated experimental results verifies effectiveness established sapphire.
The occurrence and variation of wet-etched structures on R-plane substrates sapphire were analyzed according to the distribution drilling rates typical crystal planes. First, experiment for etching hemisphere was conducted obtain with C-plane as rotation center in experimental etchant (236 °C, three parts H 2 SO 4 one part 3 PO terms volume). Then, transfer matrix applied transform volume) into center. positive curvature maximum identification method then planes substrates. Finally,...
Sapphire crystal is extensively used in fabrication of advanced micro/nano devices. Due to its crystalline structure, sapphire shows more complicated properties wet etching process. This paper for the first time investigates measurement overall orientation dependence etch rate under different etchant. The experiment that has six high regions distribution, which quite from other trigonal materials. change surface morphology also strongly depends on crystallographic orientation. We demonstrate...
In this paper, a layer-by-layer removal model of surface atoms (Al) is established according to the atomic structure sapphire, which can accurately calculate etch rates crystal planes and analyze anisotropy sapphire. Firstly, rate distributions sapphire are gained through different etching experiments hemispheres, effect concentrations solution on analyzed. Then, types classified based chemical bonds atoms, arrangement laws analyzed general formula for calculating proposed. Finally,...
In this paper, the Monte Carlo simulation for sapphire in wet etching is optimized, which improves accuracy and efficiency of simulated results. Firstly, an eight-index classification method proposed to classify kinds surface atoms, can make assigned removal probabilities more accurately atoms. Secondly, based on extended probability equation (E-RPE) proposed, makes errors between experimental rates smaller greatly result etch rate distribution under condition (H2SO4:H3PO4 = 3:1, 236 °C)....
This paper presents an atomic structure method to calculate anisotropic wet etching rates of sapphire crystal planes for the first time. Each plane can be regarded as composed three unit A <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf> , B and C in different combinations based on distribution atom types surface sites each at <tex xmlns:xlink="http://www.w3.org/1999/xlink">$< 11\bar{2}0 >$</tex> direction. The calculated accurately...
This study focuses on the simulation of wet etching sapphire at different concentrations and temperatures. We use Evolutionary Kinetic Monte Carlo (E-KMC) method, which combines (i) a removal probability function (RPF), to reduce large collection adjustable rates smaller number energy parameters, (ii) an evolutionary algorithm, optimize those parameters by minimizing errors between simulated experimental for selected group surface orientations. To improve resemblance etch rate distributions...