Sulfur (S)-doped titanium dioxide (TiO2) was synthesized by ion implantation and subsequent thermal annealing. The S ions were implanted into the single crystals of rutile TiO2 at a fluence 8×1015 ions/cm2. According to results Rutherford backscattering spectroscopy channeling analysis, irradiation damage recovered annealing 600 °C in air. In annealed crystal, atoms occupied oxygen sites for form Ti-S bonds, as confirmed x-ray photoelectron spectroscopy. Compared pure TiO2, photocurrent...

Poly(ether ether ketone)-based graft-type polymer electrolyte membranes solved the trade-off relationship between conductivity and mechanical properties.

Molybdenum (Mo) doped vanadium dioxide thin films were synthesized using a Mo striped (V) target during pulsed laser ablation process. The film structure was characterized by high resolution x-ray diffraction, rocking curve and Rutherford backscattering/channeling measurements. results show that the full width at half magnitude of is as narrow 0.0074°, comparable to (0001) sapphire substrate, 0.0042°, in this study. ratio aligned-to-random backscattered yield reaches 5%, implying growth...

thin films prepared by pulsed-laser ablation have been investigated high-resolution x-ray diffraction, pole-figure, Rutherford backscattering/channelling and electrical measurements. The results show that deposited on (0001) sapphire substrates grow with well determined orientations in the plane: out of . aligned-to-random ratio backscattered yield spectra can be as low 5%, resistivity changes a factor during phase transformation hysteresis loop width , which implies both structure...

We investigated the ferromagnetism of ZnO induced by oxygen implantation using spin-polarized positron annihilation spectroscopy together with magnetization measurements. The measurements showed appearance after and its disappearance during post-implantation annealing at temperatures above 573 K. Doppler broadening radiation (DBAR) spectrum asymmetry upon field reversal implantation. obtained differential DBAR between positive negative magnetic fields was well-explained a theoretical...

We have performed time-and-space resolved X-ray absorption spectroscopy with a time resolution of 10 ns to study laser-ablated Si particles in scale ranging from 0 120 ns. Neutral and charged produced by laser ablation are observed through spectra. Assignments transitions 2s 2p initial states higher Rydberg atom ions achieved, we experimentally determine the LI \kern-1ptI,I \kern-1ptI edges neutral ( Si0) such as Si+, Si2+, Si3+ Si4+. The main ablated found be stage relative amounts depend...

The structure of the ${\mathrm{SiO}}_{2}∕4\mathrm{H}\text{\ensuremath{-}}\mathrm{SiC}$ interface produced by dry oxidation has been studied using positron annihilation spectroscopy energy-variable slow beams. Based on Doppler broadening shape and wing parameter ($S\text{\ensuremath{-}}W$) correlation, layer was clearly distinguished from ${\mathrm{SiO}}_{2}$ $\mathrm{SiC}$ layers. A single lifetime $451\phantom{\rule{0.3em}{0ex}}\mathrm{ps}$, which is sufficiently longer than that in...

In spin-polarized surface positronium annihilation measurements, the spin polarizations of graphene and $h$-BN on Co(0001) were higher than those Ni(111), while no significant differences seen between same metal. The obtained agreed with expected from first-principles calculations considering positron wave function electron density states first layer to vacuum region. as compared Ni(111) simply reflect these metals. comparable metal are attributed creation similar electronic due strong...

FeTiO 3 (FTO) thin films were epitaxially grown on two kinds of α-Al2O3 substrates [(0001) and (112̄0)] through pulsed laser deposition under a mixtured gas ambient 5% oxygen with argon used as the balance. The x-ray diffraction (XRD) XRD pole figure measurements show parallel growth relationships these substrates, (0006)∥(0006), (112̄0)∥(112̄0), respectively. interplane texture measurement also shows that relationship exists. Rutherford backscattering spectrometry Auger electron analyses...

The energy spectrum of positronium atoms generated at a solid surface reflects the electron density states (DOS) associated solely with first layer. Using spin-polarized positrons, spin-dependent DOS can be studied. For this purpose, we have developed time-of-flight spectroscopy apparatus based on $^{22}\mathrm{Na}$ positron source and an electrostatic beam transportation system, which enables sampling topmost electrons around $\mathrm{\ensuremath{\Gamma}}$ point near Fermi level. We applied...

A cubic silicon carbide (\ensuremath{\beta}-SiC) buried layer was synthesized in Si(111) using a combination of multienergy carbon ion implantation at room temperature and post-thermal annealing. The crystal structure the crystalline quality \ensuremath{\beta}-SiC identified by x-ray diffraction \ensuremath{\theta}--2\ensuremath{\theta} mode examined pole figure measurement diffraction. Interestingly, technique, showed epitaxial growth annealing temperatures as low 400...

An epitaxial TiO2-anatase thin film was grown on the Si(001) substrate with SrTiO3/TiN as buffer layers by pulsed laser deposition technique under an oxygen gas supply. The typical thicknesses of TiO2-anatase, SrTiO3 and TiN were 760 nm, 450 nm 230 respectively. characterization performed using x-ray diffraction method. crystallographic relationships between analysed θ-2θ scan pole figure measurement. growth direction films determined TiO2⟨001⟩/SrTiO3⟨001⟩/TiN⟨001⟩/Si⟨001⟩ their in-plane...

We performed the dynamical simulation of SiO2/4H-SiC(0001) interface oxidation process using first-principles molecular dynamics based on plane waves, supercells, and projector augmented wave method. The slab model has been used for simulation. heat-and-cool method is to prepare initial structure. In this structure, there no transition oxide layer or dangling bond at SiO2/SiC interface. As trigger process, carbon vacancy introduced in SiC near oxygen molecules are added one by empty sphere...

Positronium formation at Si(111) and Si(001) surfaces has been investigated by changing the doping level systematically over range 300--1000 K. The temperature dependence of positronium fraction varied with condition, there were practically no differences between two surface orientations. In heavily doped $n$-type Si $(n\ensuremath{\gtrsim}{10}^{18}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3})$, (${I}_{\mathrm{Ps}}$) increased above 700 K reached more than 95% 1000 undoped...