A5037030194- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Optical Network Technologies
- Advanced Photonic Communication Systems
- Advanced Fiber Optic Sensors
- Semiconductor materials and devices
- Neural Networks and Reservoir Computing
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic Crystals and Applications
- Advanced Fiber Laser Technologies
- Digital Innovation in Industries
- Economic and Social Issues
- Optical Coatings and Gratings
- International Development and Aid
- Advancements in Semiconductor Devices and Circuit Design
- Political and Social Issues
- Political Systems and Governance
- Laser Design and Applications
- Diverse Legal and Medical Studies
- Terahertz technology and applications
- Social Policies and Healthcare Reform
- Social and Demographic Issues in Germany
- European Union Policy and Governance
- German Economic Analysis & Policies
- Semiconductor Quantum Structures and Devices
Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute
2013-2024
Institute of Electrical and Electronics Engineers
2019
Gorgias Press (United States)
2019
Deutscher Bundestag
2018
European Parliament
2017
We present our hybrid InP to SiN TriPleX integration interface with a novel alignment technique and its application complex photonic integrated circuits. The comprises vertical stops, which simplify the process allow for array same simplicity as single dies. Horizontal is carried out by utilizing optical backscatter reflectometry get an active feedback signal without need operate chip. Thus, typical contacting limitations of flip-chip are overcome. By using this method, we demonstrate DFB...
We propose and demonstrate a novel O-band wavelength division multiplexing (WDM) optical transceiver enabled by the hybrid photonic integration of indium phosphide (InP) components into polymer-based motherboard called PolyBoard. The engine hosts an eight-fold InP electro-absorption modulated laser (EML) array at transmitter part exhibiting >35GHz electro-optical bandwidth photodiode (PD) receiver with 50 GHz bandwidth, butt-end coupled to PolyBoard motherboard, which accommodates passive...
We demonstrate a photonic-integrated circuit for continuous-wave (cw) terahertz (THz) generation. By comprising two lasers and an optical phase modulator on single chip, the full control of THz signal is enabled via unique bidirectional operation technique. Integrated heaters allow continuous tuning frequency over 570 GHz. Applied to coherent cw photomixing system operated at 1.5 μm wavelength, we reach signal-to-noise ratio 44 dB 1.25 THz, which identical performance standard based discrete...
Wafer-level probing of photonic integrated circuits is key to reliable process control and efficient performance assessment in advanced production workflows. In recent years, optical surface-coupled devices such as vertical-cavity lasers, top-illuminated photodiodes, or silicon with surface-emitting grating couplers has seen great progress. contrast that, wafer-level edge-emitting hard-to-access vertical facets at the sidewalls deep-etched dicing trenches still represents a major challenge....
We demonstrate an L-band InGaAlAs based electroabsorption modulated DFB laser integrated with a semiconductor optical amplifier. The device can be operated up to 56 Gb s−1 low chirp and high output power. is realized one common multi quantum well structure for fabrication costs yield. describe important aspects of the present DC RF characterization. For experimental characterization focus lies on influence amplifier (SOA) performance. Cross-sectional view
We present a novel array of electroabsorption modulated lasers as compact and low-cost single-chip solution for future 200 Gb/s transmitters. The is designed high optical output power with semiconductor amplifiers at the front side chip. A common InGaAlAs-MQW active layer structure allows simple cost-effective monolithic integration. On chip RF transmission lines are implemented to bring all electrical contacts rear array-chip which supports packaging short wire bonds. operates four...
Abstract InP technology is the principal enabler for implementing fully monolithic photonic integrated circuits (PIC), uniquely including transmitter elements. In this article we present an overview of recent achievements on ultra-high speed electro-absorption modulated lasers (EML) which represent a simple PIC comprising single-mode laser diode and modulator. Using so-called identical-layer approach single-wavelength modulation rates up to 100 Gb/s have been accomplished. By additionally...
We present an interface for hybrid flip-chip integration of InP-based laser sources to silicon-nitride-based photonic platforms. The design enables efficient high optical power coupling over a wide temperature range. modes and SiN chip are expanded using integrated tapers allowing alignment tolerance. chips comprise physical stops vertical alignment. In the horizontal direction, is optimized active and/or visual with precision precise marks. shows waveguide coupled more than 40 mW can...
In this paper, we present a novel device which comprises DFB laser with electroabsorption modulators integrated on both sides. This chip provides two independently modulated optical outputs from single source and thus cuts the required number of chips for multilane applications in half. Both can be simultaneously operated 56 Gb/s NRZ leading to 112 chip. The performance is further tested an PAM4 generation experiment. are combined polarization combiner generate signal receiver side measured...
Commercial introduction of emerging integrated photonics technologies requires a long and complex multi-layer product development, industrialization, qualification cycles at all levels value chain from initial design, material sourcing, component-system-module manufacturing, testing, through marketing delivery new products to the market. Scalable assembly packaging electronic-photonic modules is important may take more than half entire product's costs. In this paper, we will report on some...
We present a novel DFB laser with electroabsorption modulators at both sides. This device generates 56 Gb/s NRZ from each side and thus cuts the number of required chips for multilane applications in half.
Ultra-narrow linewidth tunable hybrid integrated lasers are built from a combination of indium phosphide (InP) and silicon nitride-based TriPleX™. By combining the active functionality InP with ultra-low loss properties TriPleX™ platform narrow in C-band realized. The is used for light generation to define long cavity wavelength-selective filter. has ability adapt mode profiles over chip extremely suitable matching other platforms integration. filter based on Vernier micro-ring resonators...
100 GBd is demonstrated from 30°C to 70°C with O-Band InP EML array chips. Modulation bandwidths are above 50 GHz, and an integrated SOA ensures 10 dBm, while a single active layer allows for cost effective manufacturing.
A generic InP based monolithic photonic integration platform is introduced that capable of simultaneously incorporating transmitter, receiver and passive-optical functionalities. On this basis, an integrated transmitter component for THz applications has been implemented.
A photonic engine for the integration of multi-lane optical transceivers is presented. The building blocks are InP-based electro-absorption modulated lasers and photodiodes capable operating at 50 GBaud with PAM-4 modulation, a low-cost polymer waveguiding chip providing routing multiple lanes connectivity towards standard single-mode fibers. An automatic process hybrid assembly different has been developed, integrated circuits up to 16 have demonstrated. Furthermore, high-frequency flexible...
A small footprint electroabsorption modulated DFB laser TOSA with an ultra-low power SiGe driver a efficiency of 3.59 pJ/bit is demonstrated. Good optical eye openings up to 56 GBd NRZ and 64 Gb/s PAM-4 were obtained. The novel EML consumes 84 mW only.
This paper presents a hybrid photonic integration concept based on the use of polymer motherboard, InP EML arrays and PD to realize WDM SDM Terabit optical engines operating at 100-Gb/s or even 200-Gb/s per lane. The are aligned with Ethernet roadmap, cost-efficient by design can find their place in next generation IM/DD transceivers within Data Centers.
We demonstrate an EML-array for up to 4x200 Gb/s PAM4 modulation at 45°C. Its single MQW layer stack design allows low-cost fabrication. The device is optimized equal performance over four LAN-WDM wavelength channels.
We demonstrate a high output power EML-array operating at 4 × 56 Gb/s NRZ. On chip RF transmission lines enable flexibility for packaging and driver integration. A common active layer structure allows cost effective fabrication.
Fraunhofer HHI's hybrid integration platform PolyBoard combines polymer passive waveguides with InP and other materials. We present new functionalities integrated in PolyBoard: Isolation: With a microoptical bench into isolators can be built. Quantum sensing: By integrating nonlinear materials the bench, 2nd (775 nm), 3rd (515 4th (387 nm) harmonic generation could observed 3D: First results for 2x4 phased array have been achieved Flip-chip laser active alignment: developed an alignment...
We demonstrate an EML-array for up to 4x200 Gb/s PAM4 modulation at 45°C. Its single MQW layer stack design allows low-cost fabrication. The device is optimized equal performance over four LAN-WDM wavelength channels.