A5070827561- Metal and Thin Film Mechanics
- Acoustic Wave Resonator Technologies
- Ferroelectric and Piezoelectric Materials
- Advanced Thermoelectric Materials and Devices
- High Entropy Alloys Studies
- Semiconductor materials and devices
- Microwave Dielectric Ceramics Synthesis
- Thermal properties of materials
- Diamond and Carbon-based Materials Research
- High-Temperature Coating Behaviors
- MXene and MAX Phase Materials
- Machine Learning in Materials Science
- Transition Metal Oxide Nanomaterials
- GaN-based semiconductor devices and materials
- Boron and Carbon Nanomaterials Research
- Nuclear Materials and Properties
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Thermal Expansion and Ionic Conductivity
- Magnetic and transport properties of perovskites and related materials
- Microwave Engineering and Waveguides
- Advanced Antenna and Metasurface Technologies
- Electronic and Structural Properties of Oxides
- Thermodynamic and Structural Properties of Metals and Alloys
- Ga2O3 and related materials
Linköping University
2017-2025
Uppsala University
2025
Thinfilm (Sweden)
2017-2024
Shanghai Institute of Microsystem and Information Technology
2022
Chinese Academy of Sciences
2022
Institut des Sciences Chimiques de Rennes
2011-2017
Centre National de la Recherche Scientifique
2011-2014
Université de Rennes
2012-2014
Magnetron sputtering is a widely used physical vapor deposition technique. Reactive for the of, e.g, oxides, nitrides and carbides. In fundamental research, versatility essential when designing or upgrading chamber. Furthermore, automated systems are norm in industrial production, but relatively uncommon laboratory-scale primarily research. Combining automatization computerized control with required research constitutes challenge designing, developing, laboratory systems. The present article...
(CoCrFeNi)1-xMox thin films with various Mo content (0-10 at.%) were grown by magnetron sputtering on a stainless steel substrate. The 0-2 at.% presented two crystal structures: one FCC phase and sigma phase, while higher only had the structure. All have (111) texture follow topography of corrosion resistance was evaluated in 0.05 M H2SO4 at room temperature 80°C. It observed that current densities considerably decreased for > 2 at%, elevated temperature. Scanning Kelvin Probe Force...
The effect of the wet-cleaning process using solvents and detergent on surface chemistry MgO(001) substrate for film deposition was investigated. Six different processes solvent were compared. growth studied by example system ScN. cleaned x-ray photoelectron spectroscopy film/substrate interface after investigated time-of-flight secondary ion mass spectroscopy. composition is dependent process. Sonication in a before yield pure oxide compared to hydroxide/carbonate contaminated all other...
A series of (TiNbZrTa)Nx coatings with a thickness ~1.1 μm were deposited using reactive magnetron sputtering segmented targets. The deposition temperature was varied from room to 700 °C resulting in different microstructures. characterized by electron microscopy, atomic force compositional analysis, and X-ray diffraction. Effects the on electrical, mechanical corrosion properties studied four-point probe, nanoindentation potentiodynamic polarization measurements, respectively. photoelectron...
CrN thin films with an N/Cr ratio of 95% were deposited by reactive magnetron sputtering onto (0 0 1) sapphire substrates. X-ray diffraction and pole figure texture analysis show (1 1 epitaxial growth in a twin domain fashion. By changing the nitrogen versus argon gas flow mixture deposition temperature, different surface morphologies ranging from grainy rough textures to flat smooth prepared. These parameters can also affect CrNx system, film compound between semiconducting metallic Cr2N...
ScN is an emerging semiconductor with indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and alloys piezoelectric application. other transition metal nitride semiconductors used their interesting electrical properties are sensitive to contaminants, such oxygen or fluorine. In this present article, the influence of depositions conditions on amount contaminants incorporated in films were investigated effects (electrical resistivity Seebeck...
Mg3Sb2-based thermoelectric materials attract attention for applications near room temperature. Here, Mg-Bi films were synthesized using magnetron sputtering at deposition temperatures from temperature to 400 °C. Single-phase Mg3Bi2 thin grown on c-plane-oriented sapphire and Si(100) substrates a low of 200 The grew epitaxially c-sapphire fiber-textured Si(100). orientation relationships the film with respect substrate are (0001) Mg3Bi2‖(0001) Al2O3 [112¯0] Mg3Bi2‖[112¯0] Al2O3. observed...
Realizing stress-free inorganic epitaxial films on weakly bonding substrates is of importance for applications that require film transfer onto surfaces do not seed epitaxy. Film-substrate usually weakened by harnessing natural van der Waals layers (e.g., graphene) substrate surfaces, but this difficult to achieve in non-layered materials. Here, we demonstrate epitaxy a material VO2 mica. The exhibit out-of-plane 010 texture with three in-plane orientations inherited from the crystallographic...
For applications in energy harvesting and environmentally friendly cooling, for power sources remote or portable applications, it is desired to enhance the efficiency of thermoelectric materials. One strategy consists reducing thermal conductivity while increasing retaining factor. An approach achieve this doping Seebeck coefficient electrical conductivity, simultaneously introducing defects materials increase phonon scattering. Here, we use Mg ion implantation induce epitaxial ScN (111)...
Solid-state precipitation can be used to tailor material properties, ranging from ferromagnets and catalysts mechanical strengthening energy storage. Thermoelectric properties modified by enhance phonon scattering while retaining charge-carrier transmission. Here, unconventional Janus-type nanoprecipitates are uncovered in Mg3 Sb1.5 Bi0.5 formed side-by-side Bi- Ge-rich appendages, contrast separate nanoprecipitate formation. These Janus result local comelting of Bi Ge during sintering,...
Motivated by frequently reported deviations from stoichiometry in cubic transition metal nitride (TMNx) thin films, the effect of N-vacancy concentration on elastic properties TiNx, ZrNx, VNx, NbNx, and MoNx (0.72≤x≤1.00) is systematically studied density functional theory (DFT) calculations. The predictions are validated experimentally for VNx (0.77≤x≤0.97). DFT results indicate that behavior TMNx depends both valence electron (VEC) metal: While TiNx ZrNx exhibit vacancy-induced reductions...
NiO thin films with varied oxygen contents are grown on Si(100) and c-Al2O3 at a substrate temperature of 300 °C using pulsed dc reactive magnetron sputtering. We characterize the structure optical properties changes as functions content. cubic structure, single phase, predominant orientation along (111) is found both substrates. X-ray diffraction pole figure analysis further show that exhibits fiber-textured growth, while twin domain epitaxy was achieved c-Al2O3, NiO(111)∥Al2O3(0001)...
Growth temperature (Ts) and ion irradiation energy (Ei) are important factors that influence film growth as well their properties. In this study, we investigate the evolution of crystal structure residual stress TiNbCrAlHfN films under various Ts Ei conditions, where latter is mainly controlled by tuning flux sputtered Hf ions using bipolar high-power impulse magnetron (BP-HiPIMS). The results show exhibit typical FCC NaCl-type structure. By increasing from room to 600 °C, texture changes...
Epitaxial NiO and CrN thin films were deposited on a single-crystal Al2O3(11¯02) (r-plane sapphire) using magnetron sputtering. The two materials intentionally into different deposition chamber designs under conditions (temperature, pressure, gases, energy of sputtered particles). Despite the differences in condition material system, both had same feature with uncommon tilted epitaxial growth. Through an in-depth x-ray diffraction analysis NaCl (B1)-structured r-plane sapphire, full twin...
The utilization of polarized neutrons is great importance in scientific disciplines spanning materials science, physics, biology, and chemistry. However, state-of-the-art multilayer polarizing neutron optics have limitations, particularly low specular reflectivity polarization at higher scattering vectors/angles, the requirement high external magnetic fields to saturate polarizer magnetization. Here, we show that, by incorporating
Defects tend to modify significantly the properties of semiconductors, such as transport properties, by increasing scattering electrons and phonons, or optical modifying band structure Fermi level. The high interest ScN thin films for thermoelectric applications results from incorporation oxygen, which is well known be source their degenerate n-type state significant power factor. Indeed, oxygen acts a donor defect when substituted nitrogen. In this study, ion implantation was performed at...
This study explores the impact of boron carbide (B4C) addition on magnetic domains within Fe/Si multilayers through off-specular neutron scattering with polarization analysis. The incorporation B4C induces amorphization in layers, disrupting domain structures. Analysis patterns reveals that pure exhibit no significant correlation between resulting a specific diffuse signal, while incorporated revealed scattering. We offer qualitative interpretation these phenomena and accurately model...
Abstract Ion implantation is a widely used technique to introduce defects in low-dimensional materials and tune their properties. Here, we investigate the thermoelectric properties of scandium nitride thin films implanted with helium ions, revealing positive impact defect engineering on performance. Transport modeling electron microscopy provide insights distribution films. The electrical resistivity Seebeck coefficient increase significantly absolute values after partially recover upon...
This study examines the growth characteristics and structural properties of {\alpha}-MoO3 thin films with thicknesses ranging from 2.5 to 160 nm, deposited on f-mica c-sapphire substrates at 400 {\deg}C. X-ray diffraction analysis reveals that are predominantly orthorhombic a preferred 0k0 orientation along out-of-plane direction both substrates. The d-spacing for 060 reflection shows slight reduction increased thickness, particularly f-mica, which suggests minimal strain in film...
Molybdenum oxide films are attractive for diverse applications due to properties offered by multiple phases and polymorphs, which also makes exclusive synthesis of desired a major challenge. Here, we demonstrate that oxygen flow ratio pO2 is key phase selection, the type extent preferred orientation epitaxy. Exclusive formation non-layered monoclinic MoO2 crystals supported on both mica sapphire substrates at 500 {\deg}C within much 0.1 \le 0.25 range, outside amorphous. At 400 {\deg}C,...
ScN-rich (Sc,Nb)N solid solution thin films have been studied, motivated by the promising thermoelectric properties of ScN-based materials. Cubic Sc1-xNbxN for 0 ≤ x 0.25 were epitaxially grown DC reactive magnetron sputtering on a c-plane sapphire substrate and oriented along (111) orientation. The crystal structure, morphology, thermal conductivity, electrical investigated. ScN reference film exhibited Seebeck coefficient −45 μV/K power factor 6 × 10−4 W/m K2 at 750 K. Estimated from room...
Multicomponent (TiNbZrTa)Nx films were deposited on Si(100) substrates at room temperature using magnetron sputtering with a nitrogen flow ratio fN [fN = N2/(Ar + N2)], which was varied from 0 to 30.8%. The content in the between and 45.2 at.%, i.e., x 0.83. microstructure characterized by X-ray diffraction electron microscopy. metallic TiNbZrTa film comprised dominant bcc solid-solution phase, whereas single NaCl-type face-centred cubic structure observed all nitrogen-containing...
The study aims to understand the irradiation behavior of multilayer coatings composed high-entropy materials. Here, we report structural stability and elemental segregation TiNbZrTa/CrFeCoNi metallic nitride under 3-MeV Xe20+ ion-irradiation at room temperature 500 °C, respectively. Transmission electron microscopy analysis shows that microstructure nanocrystalline CrFeCoNi high-entropy-alloy sublayers are not stable readily transforms into amorphous state °C and/or conditions. distribution,...
Nanostructured materials and nanocomposites have shown great promise for improving the efficiency of thermoelectric materials. Herein, Fe nanoparticles were imbedded into a CrN matrix by combining two physical vapor deposition approaches, namely, high-power impulse magnetron sputtering nanoparticle gun. The combination these techniques allowed formation in which remained intact without intermixing with matrix. electrical thermal transport properties investigated compared to those monolithic...