A5022790787- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Transition Metal Oxide Nanomaterials
- ZnO doping and properties
- Child Nutrition and Water Access
- Electronic and Structural Properties of Oxides
- Chalcogenide Semiconductor Thin Films
- Healthcare and Environmental Waste Management
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- Quantum Dots Synthesis And Properties
- Wastewater Treatment and Reuse
- GaN-based semiconductor devices and materials
- Gas Sensing Nanomaterials and Sensors
- Advanced Semiconductor Detectors and Materials
- solar cell performance optimization
- Boron and Carbon Nanomaterials Research
- Terahertz technology and applications
- Infection Control in Healthcare
- Infection Control and Ventilation
- Semiconductor materials and interfaces
- Urban Stormwater Management Solutions
- Semiconductor Quantum Structures and Devices
- Phase-change materials and chalcogenides
Griffith University
2025
International Centre for Diarrhoeal Disease Research
2024-2025
Baltimore City Public Schools
2024
University of Dhaka
2023
George Mason University
2015-2017
National Institute of Standards and Technology
2015-2016
Material Measurement Laboratory
2015-2016
University of Maryland, College Park
2015
Physical Measurement Laboratory
2015
Inha University
2013
Materials showing reversible resistance switching between high-resistance state and low-resistance at room temperature are attractive for today’s semiconductor technology. In this letter, the reproducible hysteresis resistive characteristics of metal-CuxO-metal (M-CuxO-M) heterostructures driven by low voltages demonstrated. The fabrication M-CuxO-M is fully compatible with standard complementary metal-oxide process. behavior discussed. good retention exhibited in accurate controlling...
A self-powered ultraviolet (UV) photodetector (PD) based on p-NiO and n-ZnO was fabricated using low-temperature sputtering technique indium doped tin oxide (ITO) coated plastic polyethylene terephthalate (PET) substrates. The p-n heterojunction showed very fast temporal photoresponse with excellent quantum efficiency of over 63% under UV illumination at an applied reverse bias 1.2 V. engineered ultrathin Ti/Au top metal contacts transparent PET/ITO substrates allowed the PDs to be...
Unsafe hospital wastewater (HWW) is a significant concern, especially in low-and middle-income countries (LMICs) where the health impact often underreported. Socio-technical systems (STS) theory, which examines interplay between social and technical elements within complex systems, widely used developed but rarely applied LMIC hospitals. STS theory was employed to evaluate aspects of HWW treatment management Dhaka City, alongside comprehensive assessment WWT processes. A mixed-methods...
We report on the significant performance enhancement of SnO2 thin film ultraviolet (UV) photodetectors (PDs) through incorporation CuO/SnO2 p-n nanoscale heterojunctions. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in ambient to form CuO. attribute improvements enhanced UV absorption, demonstrated both experimentally and using optical simulations, electron transfer facilitated nanoheterojunctions. peak responsivity PDs at a bias 0.2 V improved from 1.9...
We have investigated various doped metal oxides such as copper molybdenum oxide, Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> , ZrO aluminium ZnO, and Cu xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> for novel resistance memory applications. Compared with non-stoichiometric (Nb xmlns:xlink="http://www.w3.org/1999/xlink">5-x</sub> SrTiO ), show higher device yield. Moreover,...
Materials showing reversible resistance switching between high-resistance state and low-resistance at room temperature are attractive for today’s semiconductor technology. In this letter, the improvement of reproducible hysteresis resistive characteristics metal-La0.7Ca0.3MnO3-metal (M-LCMO-M) heterostructures is demonstrated. The fabrication M-LCMO-M compatible with standard complementary metal-oxide process. effect oxygen annealing on discussed. good retention exhibited in by accurate...
A facile, low-cost, scalable, catalyst-free solution-processed method is used to grow high-quality antimony selenide nanostructures from a molecular ink directly on flexible substrates for high-performance near-infrared photodetectors. The fabricated photodetectors exhibit fast response and high performance with excellent flexibility durability, suggesting strong potential broadband optoelectronic device applications.
Background Lack of access to functional and hygienic toilets in healthcare facilities (HCFs) is a significant public health issue low- middle-income countries (LMICs), leading the transmission infectious diseases. Globally, there lack studies characterising toilet conditions estimating user-to-toilet ratios large urban hospitals LMICs. We conducted cross-sectional study 10-government two-private explore availability, functionality, cleanliness, ratio Dhaka, Bangladesh. Methods From Aug-Dec...
The nanoscale resistance switching property of copper-carbon-mixed (Cu-C) layer was investigated for nonvolatile memory applications. Cu-C the cross-point cell array showed typical filament with two orders on/off ratio, exhibiting stable and a narrow distribution set reset voltages in junction. In addition, we area dependence operation current. Based on these results current-voltage temperature, discussed potential mechanism layer.
This work presents the effect of Al mole fraction and gate oxide on direct current low frequency noise characterization GaN/AlGaN high electron mobility transistor (HEMT). Metal–oxide–semiconductor (MOS)-HEMT with SiO2 in stack improved Id(on)/Id(off) ratio up to more than 8 orders, compared fabricated HEMT without oxide. It was shown that leakage isolation suppression efficiency dramatically Subthreshold swing MOS-HEMTs different fractions (from 20% 35%) varies slightly from 72 mV/decade 79...
Several oxides have recently been reported to resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary demonstrated great potential as resistive-switching elements. However, the switching mechanisms not yet clearly understood, uniformity reproducibility of devices sufficient gigabit-NVM The primary requirements in applications are scalability, fast speed, good retention, a reasonable resistive window, constant working voltage. In this paper, we...
Unsafe hospital wastewater is a significant concern, especially in low- and middle-income countries (LMICs) where the health impact often underreported. Socio-technical systems (STS) theory, which examines interplay between social technical elements within complex systems, widely used developed but rarely applied LMIC hospitals. We employed STS theory to evaluate aspects of treatment (WWT) management Dhaka City, alongside comprehensive assessment WWT processes. mixed-methods approach,...
Abstract Achieving large-scale, affordable, and highly dependable production of antimony sulfide is crucial for unlocking its potential in various applications, including photoconductors, solid-state batteries, thermoelectrics, solar cells. In our study, we introduce a straightforward, economical, catalyst-free single-step solution process fabricating one-dimensional Sb 2 S 3 nanostructures on flexible polyimide substrates, explore their use as photoconductors the ultraviolet (UV) visible...
The third-generation multijunction solar cell (MJSC) is the most promising in terms of champion photoconversion efficiency. This advanced photovoltaic considered as future green electricity source to meet gradually increasing terrestrial energy demand. Usually, MJSC consists 2 6 semiconducting materials. These materials work sub-cells or sublayers a cell. sub-cell selected fashion so that it can absorb entire spectrum. In this project, efficiency novel has been investigated. A detailed...
For nMOS devices with HfO/sub 2/, a metal gate very low workfunction is necessary. In this letter, the effective (/spl Phi//sub m,eff/) values of ScN/sub x/ gates on both SiO/sub 2/ and atomic layer deposited (ALD) are evaluated. The x//SiO/sub samples have wide range /spl m,eff/ from sim/ 3.9 to 4.7 eV, nMOS-compatible can be obtained. However, conventional post deposition-annealed show relatively narrow 4.5 4.8 cannot obtained due Fermi-level pinning (FLP) effect. Using high-pressure wet...
Ultrashallow junction (<l0nm) p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> /n formed by B <inf xmlns:xlink="http://www.w3.org/1999/xlink">18</inf> H xmlns:xlink="http://www.w3.org/1999/xlink">22</inf> cluster ion implantation and excimer laser annealing (ELA) is demonstrated. equivalent energy at 0.25 keV readily forms an amorphous-silicon (a-Si) layer without additional Si or Ge implantation. After ELA 500 mJ/cm...
It is shown that sub-THz images of a GaN/AlGaN RF power FET allow one to unambiguously identify which part the device operational, when we purposely disconnect different portions from supply. The effect explained by combination factors including contact pad geometry, orientation bonding wires, and distribution channel current in their impact on coupling THz radiation into device. This work paves way for potential application imaging failure analysis circuit.
The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However, various issues such as the mechanisms, uniformity, scalability and reproducibility have not yet solved. In this paper, we discuss recent progress mechanisms behaviors materials.