A5003520487- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- Thin-Film Transistor Technologies
- Advanced Memory and Neural Computing
- ZnO doping and properties
- Semiconductor materials and interfaces
- Copper Interconnects and Reliability
- Silicon and Solar Cell Technologies
- Electronic and Structural Properties of Oxides
- Transition Metal Oxide Nanomaterials
- MXene and MAX Phase Materials
- Ferroelectric and Piezoelectric Materials
- Nanowire Synthesis and Applications
- Metal and Thin Film Mechanics
- Silicon Nanostructures and Photoluminescence
- Advancements in Photolithography Techniques
- GaN-based semiconductor devices and materials
- 3D IC and TSV technologies
- Electrostatic Discharge in Electronics
- Acoustic Wave Resonator Technologies
- Organic Light-Emitting Diodes Research
- Perovskite Materials and Applications
- Silicon Carbide Semiconductor Technologies
Inha University
2016-2025
Convergence
2025
Seoul National University
1994-2024
GS Caltex (South Korea)
2023
Kangwon National University
2022
The University of Texas at Dallas
2022
Anyang University
2022
Hanyang University
2022
Dow Chemical (United States)
2022
Brookhaven National Laboratory
2022
We investigated the impact of photon irradiation on stability gallium-indium-zinc oxide (GIZO) thin film transistors. The application light negative bias temperature stress (NBTS) accelerated displacement threshold voltage (Vth). This phenomenon can be attributed to trapping photon-induced carriers into gate dielectric/channel interface or dielectric bulk. Interestingly, Vth shift under photon-enhanced NBTS condition worsened in relatively humid environments. It is suggested that moisture a...
Negative-bias illumination stress (NBIS) of amorphous InGaZnO (IGZO) transistors can cause a large negative shift (>7.1 V) in threshold voltage, something frequently attributed to the trapping photoinduced hole carriers. This work demonstrates that deterioration voltage by NBIS be strongly suppressed high-pressure annealing under 10 atm O2 ambient. improvement occurred through reduction oxygen vacancy defects IGZO film, indicating transition from VO VO2+ was responsible for...
An interface dipole model explaining threshold voltage (Vt) tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed. Vt depends on rare earth (RE) type and diffusion Si∕SiOx∕HfSiON∕REOx/metal nFETs as follows: Sr<Er<Sc+Er<La<Sc<none. This ordering very similar to the trends dopant electronegativity (EN) (dipole charge transfer) ionic radius (r) separation) expected for a interfacial mechanism. The resulting dependence RE allows...
Abstract The purpose of this study was to design a method produce and test mechanically microspecimens trabecular cortical tissue from human iliac crests, compare their measured moduli. Rectangular beam specimens were prepared on low‐speed diamond blade saw miniature milling machine. final specimen dimensions ranged ∼50–200 μm for base height. modulus each using three‐point bending tests across span length 1.04 mm performed at constant rate displacement. A subset recovered radiographic...
Device instabilities of graphene metal-oxide-semiconductor field effect transistors such as hysteresis and Dirac point shifts have been attributed to charge trapping in the underlying substrate, especially SiO2. In this letter, time constants around 87 μs 1.76 ms were identified using a short pulse current-voltage method. The values two with reversible behavior indicate that hysteretic behaviors are due neither bulk SiO2 or tunneling into other interfacial materials. Also, it is concluded dc...
Hafnium oxynitride (HfOxNy) gate dielectric was prepared using reactive sputtering followed by postdeposition annealing at 650 °C in a N2 ambient. Nitrogen incorporation the confirmed x-ray photoelectron spectroscopy analysis. In comparison to HfO2 of same physical thickness, HfOxNy showed lower equivalent oxide thickness (EOT) and leakage density (J). Even after high-temperature postmetal anneal 950 °C, an EOT 9.6 Å with J 0.8 mA/cm2 @−1.5 V obtained. contrast, ∼20 for 10 observed. The...
The influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase IL dielectric constant, which correlates to an positive fixed charge density IL, found depend starting, pre-high-k deposition thickness IL. Electron energy-loss spectroscopy and electron spin resonance spectra exhibit signatures high-k-induced oxygen deficiency consistent with electrical data. It concluded that high temperature processing generates vacancies...
Electron trapping in high- gate dielectrics under constant voltage stress is investigated. It suggested that the electron occurs through a two-step process: resonant tunneling of injected into preexisting defects (fast trapping) and thermally activated migration trapped electrons to unoccupied traps (slow trapping). Characteristics extracted based on proposed model are good agreement with calculated properties negatively charged oxygen vacancies. The successfully describes low-temperature...
This study examined the effect of gate dielectric materials on light-induced bias instability Hf–In–Zn–O (HIZO) transistor. The HfOx and SiNx gated devices suffered from a huge negative threshold voltage (Vth) shift (>11 V) during application negative-bias-thermal illumination stress for 3 h. In contrast, HIZO transistor exhibited much better stability (<2.0 in terms Vth movement under identical conditions. Based experimental results, we propose plausible degradation model...
BackgroundCCL2/C–C chemokine receptor 2 (CCR2) signalling is suggested to play a significant role in various kidney diseases including diabetic nephropathy. We investigated the renoprotective effect of CCR2 antagonist, RS102895, on development nephropathy type mouse model.
This study examined the effect of thickness interfacial indium-tin oxide (ITO) on performance and bias reliability zinc-tin (ZTO) thin film transistors (TFTs). The 3.5-nm-thick ITO-inserted ZTO TFTs exhibited superior mobility (43.2 cm2/V s) to that only (31.6 s). Furthermore, threshold voltage shifts for ZTO/ITO bi-layer device decreased from 1.43 −0.88 V (ZTO device) 0.46 −0.41 under positive negative stress, respectively. improvement can be attributed a decrease in trap density device.
Wakeup-free and endurance-robust HfZrO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HZO) ferroelectric field-effect transistor (FeFET) was fabricated on a silicon-on-insulator substrate. After high-pressure forming gas annealing as the last alloy step, performance endurance of FeFETs were significantly improved by trap states reduction, polarization enhancement, wake-up elimination. As result, show superior exceeding 10 <sup...
Bias-temperature instabilities (BTI) of HfO/sub 2/ metal oxide semiconductor field effect transistors (MOSFETs) have been systematically studied for the first time. NMOS positive BTI (PBTI) exhibited a more significant V/sub t/ instability than that PMOS negative (NBTI), and limited lifetime MOSFETs. Although high-temperature forming gas annealing (HT-FGA) improved interface quality by passivating interfacial states with hydrogen, behaviors were not strongly affected technique. Charge...
This letter presents a methodology to accurately extract the work function of metal electrodes on high-/spl kappa/ dielectrics with various charge distributions. A mathematical analysis including sources errors was used study effect distribution in gate dielectric stacks flatband voltage device. The calculations are verified by experimental results obtained for Ru-Ta alloys HfO/sub 2/ and SiO/sub stacks. It is shown that accounting appropriate model imperative accurate calculation...
Electrical and material characteristics of hafnium oxynitride (HfON) gate dielectrics have been studied in comparison with HfO/sub 2/. HfON was prepared by a deposition HfN followed post-deposition-anneal (PDA). By secondary ion mass spectroscopy (SIMS), incorporated nitrogen the found to pile up at dielectric/Si interface layer. Based on SIMS profile, interfacial layer (IL) composition films appeared be like hafnium-silicon-oxynitride (HfSiON) while IL 2/ seemed hafnium-silicate (HfSiO)....
Radiation induced charge trapping in ultrathin HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based n-channel MOSFETs is characterized as a function of dielectric thickness and irradiation bias following exposure to 10 keV X-rays and/or constant voltage stress. Positive negative oxide-trap charges are observed, depending on stress conditions. No significant interface-trap buildup found these devices under Enhanced oxide-charge...
Although solution-processable high-k inorganic dielectrics have been implemented as a gate insulator for high-performance, low-cost transition metal oxide field-effect transistors (FETs), the high-temperature annealing (>300 °C) required to achieve acceptable insulating properties still limits facile realization of flexible electronics. This study reports that addition 2-dimetylamino-1-propanol (DMAPO) catalyst perhydropolysilazane (PHPS) solution enables significant reduction curing...
Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited high mobility exceeding 52 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs, low subthreshold swing 0.2 V/decade, threshold voltage 0.1 V, an I <sub xmlns:xlink="http://www.w3.org/1999/xlink">ON/OFF</sub> ratio >2 × 10 xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> ....
This letter examines the effect of oxygen (O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) high-pressure annealing (HPA) on indium zinc oxide (IZO) thin-film transistors (TFTs) with a high-quality Al O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> passivation layer. The IZO TFTs anneal under an atmosphere at 9 atm exhibits high field-effect mobility, low subthreshold gate swing, moderate threshold voltage (Vth), and I...
Abstract A bioinspired neuromorphic device operating as synapse and neuron simultaneously, which is fabricated on an electrolyte based Cu 2+ ‐doped salmon deoxyribonucleic acid (S‐DNA) reported. Owing to the slow diffusion through base pairing sites in S‐DNA electrolyte, synaptic operation of features special long‐term plasticity with negative positive nonlinearity values for potentiation depression (α p α d ), respectively, consequently improves learning/recognition efficiency S‐DNA‐based...
This work comprehensively investigates the thermal budget required to simultaneously achieve low-temperature process conditions and high endurance in atomic layer deposited ferroelectric Hf0.5Zr0.5O2 (HZO) thin films. Because a certain level of is ferroelectricity 10 nm HZO films, crystallization temperature can be lowered below 400 °C by simply increasing annealing time. In addition, analysis behavior films based on Johnson–Mehl–Avrami–Kolmogorov model revealed that longer times are lower...