A5046452343- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Anodic Oxide Films and Nanostructures
- Advanced Memory and Neural Computing
- Electronic and Structural Properties of Oxides
- Acoustic Wave Resonator Technologies
- MXene and MAX Phase Materials
- Advanced Sensor and Energy Harvesting Materials
- Gas Sensing Nanomaterials and Sensors
- Perovskite Materials and Applications
- Analytical Chemistry and Sensors
The University of Texas at Dallas
2025
Inha University
1999-2025
Convergence
2025
This work comprehensively investigates the thermal budget required to simultaneously achieve low-temperature process conditions and high endurance in atomic layer deposited ferroelectric Hf0.5Zr0.5O2 (HZO) thin films. Because a certain level of is ferroelectricity 10 nm HZO films, crystallization temperature can be lowered below 400 °C by simply increasing annealing time. In addition, analysis behavior films based on Johnson–Mehl–Avrami–Kolmogorov model revealed that longer times are lower...
Various polymerized organic thin films were deposited on a comb-shaped electrode by using capacitive-coupled gas flow type plasma polymerization apparatus. The humidity sensing characteristics of these measured means changes in electrostatic capacitance within the frequency and range 60Hz -100kHz 20-90%RH, respectively.The capacitances film increased with increasing relative humidity. And increments grow larger lower discharge power shorter time. linearity increment change became apparent...