A5101999133- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Radio Frequency Integrated Circuit Design
- Advancements in PLL and VCO Technologies
- Cancer Treatment and Pharmacology
- Microwave Engineering and Waveguides
- Underwater Vehicles and Communication Systems
- MXene and MAX Phase Materials
- Indoor and Outdoor Localization Technologies
- Thin-Film Transistor Technologies
- ZnO doping and properties
- Underwater Acoustics Research
- Technology and Data Analysis
- Advanced Memory and Neural Computing
- Formal Methods in Verification
- Ferroelectric and Piezoelectric Materials
- Innovative Microfluidic and Catalytic Techniques Innovation
- 3D IC and TSV technologies
- Low-power high-performance VLSI design
- Real-Time Systems Scheduling
- Engineering Applied Research
- Parallel Computing and Optimization Techniques
- Copper Interconnects and Reliability
- Antenna Design and Analysis
- Diverse Approaches in Healthcare and Education Studies
The University of Texas at Dallas
2020-2025
Material Sciences (United States)
2025
Samsung (South Korea)
2003-2024
Kongju National University
2013-2023
Kangwon National University
2022
Inha University
1998-2022
Brookhaven National Laboratory
2022
Animal and Plant Quarantine Agency
2019-2021
Seoul National University of Science and Technology
2007-2019
GS Caltex (South Korea)
2019
Emerging applications such as deep neural network demand high off-chip memory bandwidth. However, under stringent physical constraints of chip packages and system boards, it becomes very expensive to further increase the bandwidth memory. Besides, transferring data across hierarchy constitutes a large fraction total energy consumption systems, has steadily increased with stagnant technology scaling poor reuse characteristics emerging applications. To cost-effectively efficiency, researchers...
The integration of ferroelectric hafnium oxide (HfO2) into semiconductor device structures has been a breakthrough in the development state-of-the-art in-memory computing (IMC) technology. high compatibility HfO2 with backend-of-the-line (BEOL) as well conventional complementary metal-oxide-semiconductor (CMOS) process technologies enables highly efficient embedded IMC applications. In this work, we consider both resistive and capacitive approaches to realization IMC-compatible devices using...
Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors have been extensively explored for in-memory computing (IMC) applications due to their nonvolatility and back-end-of-line (BEOL) compatible process. Several IMC approaches using resistance capacitance states in ferroelectric HZO proposed vector-matrix multiplication (VMM), but previous suffer from limited accuracy reliability. In this work, we propose a promising approach centered on the remanent polarization (Pr) switching of binary capacitor...
This study investigates the impact of dopants on Hf1-xZrxO2-based capacitors for high-performance, hysteresis-free dielectric applications. Control crystalline structure Hf1-xZrxO2 films is crucial achieving superior properties. The tetragonal (t) phase exhibits anti-ferroelectric (AFE) characteristics and shows promise due to its high constant (κ). However, hysteresis behavior in polarization-voltage sweeps AFE presents a significant challenge, primarily energy loss when implemented dynamic...
This work comprehensively investigates the thermal budget required to simultaneously achieve low-temperature process conditions and high endurance in atomic layer deposited ferroelectric Hf0.5Zr0.5O2 (HZO) thin films. Because a certain level of is ferroelectricity 10 nm HZO films, crystallization temperature can be lowered below 400 °C by simply increasing annealing time. In addition, analysis behavior films based on Johnson–Mehl–Avrami–Kolmogorov model revealed that longer times are lower...
The rapid advancement and stringent requirements of extreme ultraviolet (EUV) lithography technology necessitate the development advanced photoresist systems for next-generation microelectronics. Recent studies have demonstrated that inorganic-based hybrid photoresists offer notable improvements in EUV sensitivity, etch resistance, greater insusceptibility to pattern collapse compared their purely organic counterparts. However, variations synthesis/coating approaches chemistry...
We report on the electrical and optical characterisation of high‐permittivity (high‐ κ ) TiO 2 thin films grown by plasma enhanced atomic layer deposition Si (100) glass substrates, respectively. were incorporated in metal‐oxide semiconductor (MOS) capacitor structures with an Al metal gate electrode. The as‐deposited amorphous; however upon annealing temperature range 500–900 °C, crystalline anatase phase was formed. This further confirmed performing Raman measurements where characteristic...
Since the first report of ferroelectricity in fluorite structure oxides a decade ago, significant attention has been devoted to studying hafnia-based ferroelectric material systems due their promising properties and opportunities. To achieve such at low temperatures (below 400 °C), stabilizing metastable noncentrosymmetric orthorhombic phase is crucial. This review provides comprehensive overview atomic layer deposition (ALD) techniques for obtaining low-temperature applications. We discuss...
In this Letter, a high-pressure annealing (HPA) process is proposed as way to reduce the thermal budget of Hf0.5Zr0.5O2 (HZO) thin films with ferroelectric behaviors. The low-thermal-budget essential for integrating devices in back-end-of-line provide more functionalities and effective memory area. For HZO film annealed at 300 °C using HPA process, an orthorhombic phase responsible behavior was formed decrease thickness, resulting remanent polarization (Pr) ∼13 μC/cm2 (i.e., 2Pr ∼26 μC/cm2)....
This paper describes a 1 Gbit GDDR5 SDRAM with enhanced bank access flexibility for efficient data transfer in 7 <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex Notation="TeX">$~$</tex></formula> Gb/s per pin IO bandwidth. The is achieved by elimination of group restriction and reduction to active time 2.5 ns. effectiveness these key features verified system model simulation including memory its controller. To...
Abstract Solution-processed photoresists have been forerunners in semiconductor patterning for decades. Even with the drastic reduction photolithography wavelength, traditional spin-on resists still support fabrication of most advanced, sub-5 nm node logic and memory devices using EUV lithography (EUVL) ( λ = 13.5 nm). However, trade-off between resolution, sensitivity, roughness conventional pose a critical challenge race towards device downscaling to 1 node. While great efforts are being...
In this study, we focus on examining the stability of Al-based inorganic-organic hybrid thin films deposited through molecular atomic layer deposition (MALD) process in ambient environment. Our observations reveal an initial reduction material thickness within first 3 days, followed by a period stability. XPS analysis is employed to further investigate chemical alternations aged films, revealing increase C=O species as well overall oxygen content material. We also evaluate effects...
In this paper, we discuss a novel underwater localization system using EM(Electro-Magnetic) wave. Maxwell equation and Friis transmission formula were reconstructed in terms of propagation constant antenna property, then by combining these two formulas, have defined the EM wave attenuation function over distance. Using function, developed an sensor model for waves. Finally organized experimental environment performed experiments different frequencies, through 2D obtained model, meet with...
This paper presents a Ka-band 4-channel bi-directional T/R chipset in 65 nm CMOS technology for 5G beamforming system. The proposed can provide operation with moderate gain and dual polarization. Each channel consists of blocks, 5-bit step attenuator phase shifter including tuning bits. attenuation coverage are 348° the LSB 11.25° 31 dB 1 dB, respectively. 13 (Tx mode) 6 (Rx achieved at 28 GHz 4-way power divider/combiner.
Aluminum nitride (AlN) thin films were grown using thermal atomic layer deposition in the temperature range of 175–350 °C. The deposited trimethyl aluminum (TMA) and hydrazine (N2H4) as a metal precursor nitrogen source, respectively. Highly reactive N2H4, compared to its conventionally used counterpart, ammonia (NH3), provides higher growth per cycle (GPC), which is approximately 2.3 times at 300 °C and, also exhibits low impurity concentration as-deposited films. Low AlN 225 with capping...
A novel single-pulse charge pumping (SPCP) method was proposed and implemented to profile the density of states (DOSs) in metal-oxide-semiconductor thin-film transistors (TFTs). The SPCP demonstrated characterizing DOS below conduction band indium gallium zinc oxide TFTs. DOSs, including oxygen vacancy donorlike tail states, were characterized successfully with high resolution. This has all advantages conventional CP characterization.
In this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf0.5Zr0.5O2 (HZO) films are investigated. We demonstrate that lower crystallization temperature HZO originates from a densified film deposition with an anhydrous H2O2 oxidant in atomic layer process. As consequence densification, H2O2-based showed completely crystallinity fewer defects at annealing 350 °C. This reduction additionally suppresses oxidation TiN electrodes, thereby improving device reliability. The...